Abstract: An acoustic apparatus includes a back plate, a diaphragm, and at least one pillar. The diaphragm and the back plate are disposed in spaced relation to each other. At least one pillar is configured to at least temporarily connect the back plate and the diaphragm across the distance. The diaphragm stiffness is increased as compared to a diaphragm stiffness in absence of the pillar. The at least one pillar provides a clamped boundary condition when the diaphragm is electrically biased and the clamped boundary is provided at locations where the diaphragm is supported by the at least one pillar.

Abstract: A micro-electro-mechanical system (MEMS) microphone includes a rectangular substrate with a rigid base layer, a first metal layer, a second metal layer, one or more electrical pathways, an acoustic port, and a patterned flexible printed circuit board material. The MEMS microphone also includes a MEMS microphone die and a solid single-piece rectangular cover.

Abstract: An acoustic device includes a substrate, a microelectromechanical system (MEMS) apparatus, a cover, a port, and a valve. The MEMS apparatus includes a diaphragm and a back plate. The cover is coupled to the substrate and encloses the MEMS apparatus. The port is disposed through the substrate and the MEMS apparatus is disposed over the port. The valve is disposed over the port and opposite the MEMS apparatus. The valve is configured to assume a closed position during the occurrence of a high pressure event and prevent a pressure transient from damaging the MEMS apparatus. The valve is configured to assume an open position during the absence of a high pressure event.

Abstract: A microphone assembly includes a cover, a base coupled to the cover, a microelectromechanical system (MEMS) device disposed on the base. An opening is formed in the base and the MEMS device is disposed over the opening. The base includes a barrier that extends across the opening and is porous to sound. The remaining portions of the base do not extend across the opening.

Abstract: A micro-electromechanical system (MEMS) device includes a housing and a base. The base includes a port opening extending therethrough and the port opening communicates with the external environment. The MEMS die is disposed on the base and over the opening. The MEMS die includes a diaphragm and a back plate and the MEMS die, the base, and the housing form a back volume. At least one vent extends through the MEMS die and not through the diaphragm. The at least one vent communicates with the back volume and the port opening and is configured to allow venting between the back volume and the external environment.

Abstract: A microelectromechanical system (MEMS) apparatus includes a base. A MEMS device is disposed on the base. A cover encloses the MEMS device on the base. A port extends through the base, and the MEMS device is disposed over the port. A diaphragm is embedded within the base and has at least some portions that extend across the port. In an open position, the diaphragm allows the passage of sound energy from the exterior of the apparatus to the interior of the apparatus. In a closed position, the diaphragm makes contact with an outer surface of the port to at least partially block the passage of sound energy from the exterior of the apparatus to the interior of the apparatus.

Abstract: An acoustic device includes a substrate, a microelectromechanical system (MEMS) apparatus, a cover, a port, and a valve. The MEMS apparatus includes a diaphragm and a back plate. The cover is coupled to the substrate and encloses the MEMS apparatus. The port is disposed through the substrate and the MEMS apparatus is disposed over the port. The valve is disposed over the port and opposite the MEMS apparatus. The valve is configured to assume a closed position during the occurrence of a high pressure event and prevent a pressure transient from damaging the MEMS apparatus. The valve is configured to assume an open position during the absence of a high pressure event.

Abstract: An acoustic device includes a substrate, a microelectromechanical system (MEMS) apparatus, a cover, a port, and a stop. The MEMS apparatus includes a diaphragm and a back plate. The cover is coupled to the substrate and encloses the MEMS apparatus. The port is disposed through the substrate, and the MEMS apparatus is disposed over the port. The stop is disposed over the MEMS apparatus and configured to prevent movement of portions of the MEMS apparatus that would damage the portions of the MEMS apparatus.

Abstract: A microphone assembly includes a cover, a base coupled to the cover, a microelectromechanical system (MEMS) device disposed on the base. An opening is formed in the base and the MEMS device is disposed over the opening. The base includes a barrier that extends across the opening and is porous to sound. The remaining portions of the base do not extend across the opening.

Abstract: Semiconductor devices are provided. A semiconductor device can include a substrate and a plurality of dummy line patterns on the substrate that extend in a first direction parallel with one another. Each of the dummy line patterns can include a plurality of sub-line patterns aligned along the first direction and which are separated from each other by at least one cutting region therebetween. The dummy line patterns can include first and second dummy line patterns which are adjacent to each other in a second direction that is perpendicular to the first direction. At least one of the cutting regions between a pair of sub-line patterns of the first dummy line pattern is aligned with and bounded by one of the sub-line patterns of the second dummy line pattern in the second direction.

Abstract: Semiconductor devices are provided. A semiconductor device can include a substrate and a plurality of dummy line patterns on the substrate that extend in a first direction parallel with one another. Each of the dummy line patterns can include a plurality of sub-line patterns aligned along the first direction and which are separated from each other by at least one cutting region therebetween. The dummy line patterns can include first and second dummy line patterns which are adjacent to each other in a second direction that is perpendicular to the first direction. At least one of the cutting regions between a pair of sub-line patterns of the first dummy line pattern is aligned with and bounded by one of the sub-line patterns of the second dummy line pattern in the second direction.

Abstract: An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

Abstract: An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

Abstract: An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

Abstract: A solid-state transducer is disclosed. The transducer comprises a semi-conductor substrate forming a support structure and having an opening. A thin-film structure forming a diaphragm responsive to fluid-transmitted acoustic pressure is disposed over the opening. The transducer further includes a plurality of semi-conductor supports and tangential arms extending from the diaphragm edge for connecting the periphery of the diaphragm to the supports. The tangential arms permit the diaphragm to rotate relative to the supports to relieve film stress in the diaphragm. The transducer still further includes a plurality of stop bumps disposed between the substrate and the diaphragm. The stop bumps determine the separation of the diaphragm from the substrate when the transducer is biased.

Abstract: A raised microstructure for use in a silicon based device, such as a microphone, is disclosed. The raised microstructure comprises a generally planar film having a ribbed sidewall supporting the film.

Abstract: An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

Abstract: Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

Abstract: Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

Abstract: A raised microstructure for use in a silicon based device, such as a microphone, is disclosed. The raised microstructure comprises a generally planar film having a ribbed sidewall supporting the film.