Abstract: A method for manufacturing a semiconductor device including coating a photo-resist layer on a semiconductor substrate having a lower layer; performing a soft-bake process on the photo-resist layer; performing an exposure process on the photo-resist layer having passed through the soft-bake process; performing a post exposure-bake (PEB) process on photo-resist pattern holes formed by the exposure process; performing a developing process on the photo-resist pattern holes having passed through the PEB process; and performing a hard-bake process on the photo-resist pattern holes having passed through the developing process. The method improves the circularity of PR pattern holes to improve the profile of contacts in an etching process after a photography process, resulting in an enhancement in the operation reliability of the device.

Abstract: An image sensor may include a readout circuit formed over a first substrate made of InSb, the first substrate including a pixel part and a periphery part. A wiring and interlayer dielectric layer may be formed over the first substrate including the readout circuit. A photodiode may be formed over the interlayer dielectric layer and over the pixel part of the first substrate, and an upper electrode layer may be connected with the photodiode.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed. The method includes forming a plurality of color filters on a substrate, each color filter having a curvature, and forming microlenses on the color filters that each has a radius of curvature that varies with the wavelength of the color filter on which it is formed.

Abstract: An image sensor includes a lower metal interconnection, an interlayer dielectric, a first substrate, a photodiode, an upper electrode and an amorphous silicon layer. The lower metal interconnection and the interlayer dielectric are formed over the first substrate including a pixel region and a peripheral region. The photodiode is formed over the pixel region of the first substrate. The upper electrode layer is connected to the photodiode. The amorphous silicon layer is formed between the photodiode and the interlayer dielectric.

Abstract: Embodiments relate to an image sensor and a method for manufacturing the same. According to embodiments, a semiconductor substrate may include a pixel part and a peripheral part. A photo diode pattern may be formed over the pixel part having a height that is greater than a height of a surface of an interlayer dielectric film over the peripheral part. A device isolation film and a metal layer may be provided over the photodiode and over interlayer dielectric film over the peripheral part. A planarization layer may be provided and may compensate for a height difference so that a first metal film pattern connected to the photo diode pattern and a second metal film pattern connected to the metal wire in peripheral part may be simultaneously formed by patterning the planarization layer and metal film.

Abstract: An image sensor may include a dielectric, a metal interconnection, an align key, a first substrate, a photodiode, and a transparent electrode. The first substrate may include a pixel region, a peripheral circuitry region and a scribe lane. The dielectric may include a metal interconnection and an align key over the first substrate. The photodiode may be formed over the pixel region and the scribe lane. The transparent electrode may be formed over the photodiode. The align key may have a protrusion formed in a center thereof.

Abstract: A pattern mask for forming a microlens includes mask pattern parts alternately arranged and corresponding to pixel regions in a matrix, wherein neighboring corners of the mask pattern parts overlap with each other.

Abstract: A method for manufacturing a semiconductor device including coating a photo-resist layer on a semiconductor substrate having a lower layer; performing a soft-bake process on the photo-resist layer; performing an exposure process on the photo-resist layer having passed through the soft-bake process; performing a post exposure-bake (PEB) process on photo-resist pattern holes formed by the exposure process; performing a developing process on the photo-resist pattern holes having passed through the PEB process; and performing a hard-bake process on the photo-resist pattern holes having passed through the developing process. The method improves the circularity of PR pattern holes to improve the profile of contacts in an etching process after a photography process, resulting in an enhancement in the operation reliability of the device.

Abstract: A color video apparatus for displaying on-screen a hue control state of a color video signal. The apparatus includes a key input portion for inputting a hue control command of the color video signal displayed on the screen, and an on-screen-display (OSD) signal generator for generating an OSD signal for visually representing a reference color and for displaying an occupancy which indicates the degree to which the reference color contributes to the expression of a hue control state with respect to a plurality of reference colors used for expression of the hue control state, in response to the hue control command of the key input portion.