Abstract: A compound comprising a composition Ax(M?1?aM?a)y(XD4)z, Ax(M?1?aM?a)y(DXD4)z, or Ax(M?1?aM?a)y(X2D7)z, (A1?aM?a)xM?y(XD4)z, (A1?aM?a)xM?y(DXD4)z, or (A1?aM?a)xM?y(X2D7)z. In the compound, A is at least one of an alkali metal and hydrogen, M? is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M? any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001<a?0.1, and x, y, and z are greater than zero. The compound can be used in an electrochemical device including electrodes and storage batteries.

Abstract: An apparatus and method for providing an augmented reality (AR) user interface. The method includes acquiring an image containing at least one object; recognizing the object from the acquired image; detecting AR information related to the recognized object; classifying the detected AR information into groups according to specific property information; generating a user interface that displays the groups of AR information separately.

Abstract: A compound comprising a composition Ax(M?1-aM?a)y(XD4)z, Ax(M?1-aM?a)y(DXD4)z, or Ax(M?1-aM?a)y(X2D7)z, and have values such that x, plus y(1?a) times a formal valence or valences of M?, plus ya times a formal valence or valence of M?, is equal to z times a formal valence of the XD4, X2D7, or DXD4 group; or a compound comprising a composition (A1-aM?a)xM?y(XD4)z, (A1-aM?a)xM?y(DXD4)z (A1-aM?a)xM?y(X2D7)z and have values such that (1?a)x plus the quantity ax times the formal valence or valences of M? plus y times the formal valence or valences of M? is equal to z times the formal valence of the XD4, X2D7 or DXD4 group. In the compound, A is at least one of an alkali metal and hydrogen, M? is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M? any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001<a?0.1, and x, y, and z are greater than zero.

Abstract: A system and method for providing augmented reality (AR) information to a mobile communication terminal in a mobile communication system is provided. If the mobile communication terminal is determined to have entered a service cell providing AR information, the mobile communication terminal transmits an AR information request including position information to a server. Upon receiving the AR information request signal, the server determines AR information including at least one tag pattern provided in the service cell and information associated with the tag pattern and transmits the AR information to the mobile communication terminal.

Abstract: The present invention relates to a method for manufacturing a SrTiO3 series varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiO3 series varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiO3 series varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

Abstract: Provided are lithium transition metal phosphates where the cation anti-site defects between lithium and transition metals in a lithium transition metal phosphate with a cation well-ordered olivine structure are arranged only in a 1D crystal direction, and a method of preparing the same. The method comprises adding any one selected from the group consisting of an alkali element and an element that has a valence of 5+ or any combination thereof to a solid salt comprising lithium, transition metals, and phosphorus as a starting material to produce a first intermediate material; subjecting the first intermediate to a first heat treatment at a temperature of approximately 250° C. to approximately 400° C. to produce a second amorphous material; and cooling the second intermediate material to room temperature, followed by a second heat treatment at a temperature of approximately 400° C. to approximately 800° C.

Abstract: Provided is a process for preparing a nanoparticle powder of lithium transition metal phosphate, involving synthesis of lithium transition metal phosphate (LiMPO4) (M=Fe, Mn, Co, Ni, Ti, Cu or any combination thereof) into a nanoparticle powder having a particle size of less than 100 nm to thereby significantly reduce a diffusion distance of lithium ions within particles, which consequently results in full exploitation of a capacity of an electrode material corresponding up to a theoretical capacity thereof and formation of nanoparticles having a high electrical conductivity within a short period of time, and which is also capable of achieving efficient industrial-scale production of a desired compound via a heat treatment at a low temperature of less than 600° C. for a short period of time of less than 4 hours while overcoming a shortcoming of a low electrical conductivity, using solid raw materials.

Abstract: A compound comprising a composition Ax(M?1-aM?a)y(XD4)z, Ax(M?1-aM?a)y(DXD4)z, or Ax(M?1-aM?a)y(X2D7)z, and have values such that x, plus y(1?a) times a formal valence or valences of M?, plus ya times a formal valence or valence of M?, is equal to z times a formal valence of the XD4, X2D7, or DXD4 group; or a compound comprising a composition (A1-aM?a)xM?y(XD4)z, (A1-aM?a)xM?y(DXD4)z (A1-aM?a)xM?y(X2D7)z and have values such that (1?a)x plus the quantity ax times the formal valence or valences of M? plus y times the formal valence or valences of M? is equal to z times the formal valence of the XD4, X2D7 or DXD4 group. In the compound, A is at least one of an alkali metal and hydrogen, M? is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M? any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001<a?0.1, and x, y, and z are greater than zero.

Abstract: A mobile communication terminal having a malfunction-preventing function is provided, including a keypad; a voltage source which is activated by voltage supplied to an EN terminal, processes voltage supplied from a battery, and outputs the processed voltage; a power_on switching unit switched on when a switch_on key of the keypad is pressed; a charging terminal supplying voltage supplied upon charging to the EN terminal; a malfunction-preventing unit preventing voltage from being supplied from the charging terminal to the EN terminal while a control signal is input; and a controller which is activated by voltage supplied from the voltage source during a power-off condition, controls the mobile communication terminal by supplying voltage to the EN terminal of the voltage source and receiving voltage from the voltage source, and outputs a control signal to the malfunction-preventing unit only when a power-off process is performed according to a power-off instruction from the keypad.

Abstract: A compound comprising a composition Ax(M?1-aM?a)y(XD4)z, Ax(M?1-aM?a)y(DXD4)z, or Ax(M?1-aM?a)y(X2D7)z, and have values such that x, plus y(1-a) times a formal valence or valences of M?, plus ya times a formal valence or valence of M?, is equal to z times a formal valence of the XD4, X2D7, or DXD4 group; or a compound comprising a composition (A1-aM?a)xM?y(XD4)z, (A1-aM?a)xM?y(DXD4)z(A1-aM?a)xM?y(X2D7)z and have values such that (1-a)x plus the quantity ax times the formal valence or valences of M? plus y times the formal valence or valences of M? is equal to z times the formal valence of the XD4, X2D7 or DXD4 group. In the compound, A is at least one of an alkali metal and hydrogen, M? is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M? any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001<a?0.1, and x, y, and z are greater than zero.

Abstract: The present invention relates to a method for manufacturing a SrTiO3 series varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiO3 series varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiO3 series varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

Abstract: A mobile communication terminal having a malfunction-preventing function is provided, including a keypad; a voltage source which is activated by voltage supplied to an EN terminal, processes voltage supplied from a battery, and outputs the processed voltage; a power_on switching unit switched on when a switch_on key of the keypad is pressed; a charging terminal supplying voltage supplied upon charging to the EN terminal; a malfunction-preventing unit preventing voltage from being supplied from the charging terminal to the EN terminal while a control signal is input; and a controller which is activated by voltage supplied from the voltage source during a power-off condition, controls the mobile communication terminal by supplying voltage to the EN terminal of the voltage source and receiving voltage from the voltage source, and outputs a control signal to the malfunction-preventing unit only when a power-off process is performed according to a power-off instruction from the keypad.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.

Abstract: A compound comprising a composition Ax(M′1-aM″a)y(XD4)z, Ax(M′1-aM″a)y(DXD4)z, or Ax(M′1-aM″a)y(X2D7)z, and have values such that x, plus y(1-a) times a formal valence or valences of M′, plus ya times a formal valence or valence of M″, is equal to z times a formal valence of the XD4, X2D7, or DXD4 group; or a compound comprising a composition (A1-aM″a)xM′y(XD4)z, (A1-aM″a)xM′y(DXD4)z (A1-aM″a)xM′y(X2D7)z and have values such that (1-a)x plus the quantity ax times the formal valence or valences of M″ plus y times the formal valence or valences of M′ is equal to z times the formal valence of the XD4, X2D7 or DXD4 group.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments.

Abstract: Disclosed is a method for preparing heteroepitaxial thin films which are free of island structures which have a bad influence on the photoelectric properties and interfacial reactivity of the thin films. These heteroepitaxial thin films are deposited on grooved or curved surfaces of substrates. The use of grooved substrates relieves the coherent elastic strain from the thin films, thereby inhibiting the surface roughening and the island structure formation in the heteroepitaxial thin films. The method can be applied to all of the thin films that show island structures, including GaAs/Si and SiGe/Si typically used in semiconductor devices and various electronic parts, enabling the thin films to be flatly deposited at a significant thickness on various substrates without additionally processing.

Abstract: A method for making a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss wherein, a BaTiO3-based body is subjected to a pre-heat treatment in a hydrogen (H2) atmosphere or a reducing atmosphere containing mixed gas of hydrogen and nitrogen in a ratio of hydrogen:nitrogen=5 to 100%:0 to 95% prior to a sintering process in the manufacture of dielectrics, in order to obtain a reduced average grain size of BaTiO3. By virtue of the reducing average grain size of BaTiO3, a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss is obtained.