Patents by Inventor Sung Tae Lee
Sung Tae Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11980229Abstract: An aerosol generating system includes: a cavity configured to accommodate at least a portion of a cigarette; a first induction coil located around the cavity; a second induction coil located around the cavity and connected to the first induction coil in parallel; and a battery configured to supply an alternating current to the first induction coil and the second induction coil, wherein the first induction coil and the second induction coil have different resonant frequencies.Type: GrantFiled: June 24, 2020Date of Patent: May 14, 2024Assignee: KT&G CORPORATIONInventors: In Su Park, Sung Jong Ki, Young Joong Kim, Jang Won Seo, John Tae Lee, Sun Hwan Jung, Eun Mi Jeoung
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Patent number: 11982462Abstract: An air conditioner includes a cabinet including an inlet port and a frame including an outlet port and coupled to the cabinet. A heat exchanger is disposed between the cabinet and the frame to exchange heat with air introduced into the inlet port and discharged to the outlet port. A blocking member is configured to connect the frame and the heat exchanger to prevent air heat-exchanged with the heat exchanger from leaking into the cabinet. This structure inhibits dew from being generated on the cabinet.Type: GrantFiled: October 8, 2019Date of Patent: May 14, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chang-Woo Jung, Sung Jae Kim, Jin-Gyun Kim, Young Tae Song, Hae Gyun Shin, Chang Sik Lee, Seo Young Cho, Sung Hyun Chun
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Patent number: 11978857Abstract: The present disclosure provides a non-aqueous electrolyte including an additive for a non-aqueous electrolyte represented by Formula 1 below: wherein, R1 to R5 may each independently be any one selected from the group consisting of H, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a cycloalkenyl group having 3 to 12 carbon atoms, and a nitrile group.Type: GrantFiled: September 29, 2022Date of Patent: May 7, 2024Assignee: LG Energy Solution, Ltd.Inventors: Hyung Tae Kim, Chul Haeng Lee, Jeong Woo Oh, Byung Chun Park, Young Mi Seo, Sung Guk Park
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Patent number: 11974600Abstract: An aerosol generating device includes a first vaporizer configured to generate a first aerosol by heating a first liquid composition, a second vaporizer configured to generate a second aerosol by heating a second liquid composition, and a controller controlling power supplied to the first vaporizer and the second vaporizer, based on a first mode, in which a smokeless aerosol is generated, and a second mode, in which a transport amount of nicotine included in the second liquid composition is adjusted.Type: GrantFiled: December 16, 2020Date of Patent: May 7, 2024Assignee: KT&G CORPORATIONInventors: In Su Park, Sung Jong Ki, Young Joong Kim, John Tae Lee, Sun Hwan Jung, Eun Mi Jeoung
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Patent number: 11970566Abstract: Disclosed is a method of manufacturing a polyurethane filter foam having excellent air permeability, elasticity, and restoring force. In the method of manufacturing the polyurethane filter foam, the cell size of the filter foam is made regular by controlling the pressure by adjusting the diameter of the foaming head of a foaming machine, rather than adding a cell opener, cell irregularity caused by poor dispersion of the cell opener is alleviated, and air permeability, porosity, and compression set are excellent.Type: GrantFiled: September 30, 2022Date of Patent: April 30, 2024Assignees: HYUNDAI TRANSYS INC., CHIN YANG CO., LTD.Inventors: Jae Yong Ko, Seung Keon Woo, Young Tae Cho, Won Sug Choi, Sung Yoon Lee, Jae Kwang Lee, Jun Ho Song
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Publication number: 20240108052Abstract: An embodiment of the present disclosure discloses tobacco material including: a center portion including a flavor material; and an outer portion including a tobacco mixture, wherein the outer portion surrounds the center portion.Type: ApplicationFiled: April 12, 2022Publication date: April 4, 2024Applicant: KT&G CORPORATIONInventors: Seok Su JANG, Sun Hwan JUNG, Hyeon Tae KIM, Jun Won SHIN, Dae Nam HAN, Yong Hwan KIM, Sung Wook YOON, Seung Won LEE
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Publication number: 20240102611Abstract: A low profile flat bombe for Liquefied Petroleum Gas (LPG) storage and method for manufacturing the same, may include a flat bombe body including an upper plate having a plurality of first piercing holes and a pump installation hole formed therethrough, a lower plate having a plurality of second piercing holes formed therethrough at positions vertically coinciding with the plurality of first piercing holes, and side plates integrally connecting first and second side end portions of the upper and lower plates, end plates mounted at front and rear openings in the flat bombe body, and support pipes, wherein upper end portions of the support pipes are welded to internal circumferential portions of the plurality of first piercing holes and lower end portions thereof are welded to internal circumferential portions of the plurality of second piercing holes to maintain a vertical distance between the upper and lower plates.Type: ApplicationFiled: December 6, 2023Publication date: March 28, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DAE HUNG PRECISION IND'L CO., LTD.Inventors: Seong Cheol Cho, Sung Won Lee, Ju Tae Song, Seung Hyun Yeo, Duk Hee Park
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Patent number: 11928579Abstract: A synapse string includes first and second cell strings each having a plurality of memory cell elements connected in series and first switch elements connected to first or second ends of the first and second cell strings, respectively. The memory cell elements of the first cell string and the memory cell elements of the second cell string are in a one-to-one correspondence, and a pair of the memory cell elements being in a one-to-one correspondence has terminals to which a read voltage is applied connected to each other to constitute one synapse morphic element, so that the synapse string includes a plurality of synapse morphic elements connected in series. A synapse string array architecture enables forward propagation and backward propagation by implementing high-density synapse strings, so that the synapse string array architecture can be applied to a neural network capable of inferencing and on-chip learning, along with inference and recognition.Type: GrantFiled: December 31, 2020Date of Patent: March 12, 2024Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Jong-Ho Lee, Sung-Tae Lee
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Publication number: 20240071316Abstract: A display device includes: a display panel including a display area including pixels and a non-display area including a dummy pixel; a scan driver which supplies a scan signal to the display panel; a data driver which supplies a data signal to the display panel; and a timing controller which supplies a first control signal for controlling the scan driver and a second control signal for controlling the data driver. The dummy pixel is connected to a bad pixel among the pixels in the display area through a repair line, and a connection of the dummy pixel to the repair line is cut off in an initialization phase in which a voltage of an initialization power source is supplied.Type: ApplicationFiled: October 19, 2023Publication date: February 29, 2024Inventors: Kyong Tae PARK, Sung Jun KIM, Jun Yeong SEOL, Jae Bok LEE
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Patent number: 11495612Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings and support openings are formed through the alternating stack, and memory opening fill structures and support pillar structures are formed in the memory openings and in the support openings, respectively. Via cavities extending to each of the sacrificial material layers are formed through the alternating stack without forming any stepped surfaces in the alternating stack. The via cavities may be formed in areas that do not overlap with the support pillar structures, or in areas that include at least one support pillar structure. Sacrificial via fill structures are formed in the via cavies, and the sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are removed, and a combination of a tubular dielectric spacer and a contact via structure can be formed in the via cavities.Type: GrantFiled: July 1, 2020Date of Patent: November 8, 2022Assignee: SANDISK TECHNOLOGIES LLCInventors: Yoshinobu Tanaka, Koichi Ito, Hideaki Hasegawa, Akihiro Tobioka, Sung Tae Lee
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Patent number: 11461624Abstract: Provided is a binary neural network including: a synapse string array in which multiple synapse strings are sequentially connected. The synapse string includes: first and second cell strings, each including memory cell devices connected in series; and switching devices connected to first ends of two-side ends of the first and second cell strings. The memory cell devices of the first and second cell strings are in one-to-on correspondence to each other, and a pair of the memory cell devices being in one-to-on correspondence to each other have one-side terminals electrically connected to each other to constitute one synapse morphic device. A plurality of the pairs of memory cell devices configured with the first and second cell strings constituting each synapse string constitute a plurality of the synapse morphic devices. The synapse morphic devices of each synapse string are electrically connected to the synapse morphic devices of other synapse strings.Type: GrantFiled: March 16, 2020Date of Patent: October 4, 2022Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Jong-Ho Lee, Sung-Tae Lee
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Patent number: 11450679Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings and support openings are formed through the alternating stack, and memory opening fill structures and support pillar structures are formed in the memory openings and in the support openings, respectively. Via cavities extending to each of the sacrificial material layers are formed through the alternating stack without forming any stepped surfaces in the alternating stack. The via cavities may be formed in areas that do not overlap with the support pillar structures, or in areas that include at least one support pillar structure. Sacrificial via fill structures are formed in the via cavies, and the sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are removed, and a combination of a tubular dielectric spacer and a contact via structure can be formed in the via cavities.Type: GrantFiled: July 1, 2020Date of Patent: September 20, 2022Assignee: SANDISK TECHNOLOGIES LLCInventors: Yoshinobu Tanaka, Koichi Ito, Hideaki Hasegawa, Akihiro Tobioka, Sung Tae Lee
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Publication number: 20220005818Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings and support openings are formed through the alternating stack, and memory opening fill structures and support pillar structures are formed in the memory openings and in the support openings, respectively. Via cavities extending to each of the sacrificial material layers are formed through the alternating stack without forming any stepped surfaces in the alternating stack. The via cavities may be formed in areas that do not overlap with the support pillar structures, or in areas that include at least one support pillar structure. Sacrificial via fill structures are formed in the via cavies, and the sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are removed, and a combination of a tubular dielectric spacer and a contact via structure can be formed in the via cavities.Type: ApplicationFiled: July 1, 2020Publication date: January 6, 2022Inventors: Yoshinobu TANAKA, Koichi ITO, Hideaki HASEGAWA, Akihiro TOBIOKA, Sung Tae LEE
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Publication number: 20220005824Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings and support openings are formed through the alternating stack, and memory opening fill structures and support pillar structures are formed in the memory openings and in the support openings, respectively. Via cavities extending to each of the sacrificial material layers are formed through the alternating stack without forming any stepped surfaces in the alternating stack. The via cavities may be formed in areas that do not overlap with the support pillar structures, or in areas that include at least one support pillar structure. Sacrificial via fill structures are formed in the via cavies, and the sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are removed, and a combination of a tubular dielectric spacer and a contact via structure can be formed in the via cavities.Type: ApplicationFiled: July 1, 2020Publication date: January 6, 2022Inventors: Yoshinobu TANAKA, Koichi ITO, Hideaki HASEGAWA, Akihiro TOBIOKA, Sung Tae LEE
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Publication number: 20210209454Abstract: A synapse string includes first and second cell strings each having a plurality of memory cell elements connected in series and first switch elements connected to first or second ends of the first and second cell strings, respectively. The memory cell elements of the first cell string and the memory cell elements of the second cell string are in a one-to-one correspondence, and a pair of the memory cell elements being in a one-to-one correspondence has terminals to which a read voltage is applied connected to each other to constitute one synapse morphic element, so that the synapse string includes a plurality of synapse morphic elements connected in series. A synapse string array architecture enables forward propagation and backward propagation by implementing high-density synapse strings, so that the synapse string array architecture can be applied to a neural network capable of inferencing and on-chip learning, along with inference and recognition.Type: ApplicationFiled: December 31, 2020Publication date: July 8, 2021Inventors: Jong-Ho LEE, Sung-Tae LEE
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Publication number: 20210166108Abstract: Provided is a binary neural network including: a synapse string array in which multiple synapse strings are sequentially connected. The synapse string includes: first and second cell strings, each including memory cell devices connected in series; and switching devices connected to first ends of two-side ends of the first and second cell strings. The memory cell devices of the first and second cell strings are in one-to-on correspondence to each other, and a pair of the memory cell devices being in one-to-on correspondence to each other have one-side terminals electrically connected to each other to constitute one synapse morphic device. A plurality of the pairs of memory cell devices configured with the first and second cell strings constituting each synapse string constitute a plurality of the synapse morphic devices. The synapse morphic devices of each synapse string are electrically connected to the synapse morphic devices of other synapse strings.Type: ApplicationFiled: March 16, 2020Publication date: June 3, 2021Inventors: Jong-Ho LEE, Sung-Tae Lee
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Patent number: 10957396Abstract: Provided is synapse strings and synapse string arrays. The synapse string includes: first and second cell strings, each having a plurality of memory cell devices connected in series; and first switch devices, each connected to one of two ends of each of the first and second cell strings. The memory cell devices of the first cell string and the memory cell devices of the second cell string are in one-to-one correspondence to each other, and terminals of pairs of the memory cell devices being in one-to-one correspondence to each other are applied with read voltages and electrically connected to each other to constitute one synapse morphic device, so that the synapse string includes a plurality of synapse morphic devices connected in series. The synapse string includes a peripheral circuit and a reference current source for implementing a function of a neuron.Type: GrantFiled: March 11, 2020Date of Patent: March 23, 2021Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Jong-Ho Lee, Sung-Tae Lee
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Patent number: 10847376Abstract: A first material layer, a second material layer, and a photoresist layer may be formed over a substrate. The second material layer may be patterned by transfer of a lithographic pattern therethrough. A conformal spacer layer may be formed over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus. Spacer films may be formed by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus. The first material layer may be anisotropically etched using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus. A high fidelity pattern may be transferred into the first material layer with reduced line edge roughness, reduced line width roughness, and without enlargement of lateral dimensions of openings in the first material layer.Type: GrantFiled: April 10, 2019Date of Patent: November 24, 2020Assignee: SANDISK TECHNOLOGIES LLCInventors: Yusuke Osawa, Syo Fukata, Naoto Umehara, Sung Tae Lee
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Publication number: 20200294602Abstract: Provided is synapse strings and synapse string arrays. The synapse string includes: first and second cell strings, each having a plurality of memory cell devices connected in series; and first switch devices, each connected to one of two ends of each of the first and second cell strings. The memory cell devices of the first cell string and the memory cell devices of the second cell string are in one-to-one correspondence to each other, and terminals of pairs of the memory cell devices being in one-to-one correspondence to each other are applied with read voltages and electrically connected to each other to constitute one synapse morphic device, so that the synapse string includes a plurality of synapse morphic devices connected in series. The synapse string includes a peripheral circuit and a reference current source for implementing a function of a neuron.Type: ApplicationFiled: March 11, 2020Publication date: September 17, 2020Inventors: Jong-Ho LEE, Sung-Tae LEE
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Patent number: D930873Type: GrantFiled: July 19, 2018Date of Patent: September 14, 2021Assignee: LG DISPLAY CO., LTD.Inventors: Hye Cho Shin, Jeong Ho Son, Hyun Soo Chung, Ah Ra Cho, Chi Young Lee, Duck Su Oh, Sung Tae Lee, Ho Geol Lim