Patents by Inventor Suraj Rengarajan
Suraj Rengarajan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145230Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.Type: ApplicationFiled: October 28, 2022Publication date: May 2, 2024Applicant: Applied Materials, Inc.Inventors: Abhishek Mandal, Nitin Deepak, Geetika Bajaj, Ankur Kadam, Gopi Chandran Ramachandran, Suraj Rengarajan, Farhad K. Moghadam, Deenesh Padhi, Srinivas M. Satya, Manish Hemkar, Vijay Tripathi, Darshan Thakare
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Publication number: 20230408413Abstract: In one embodiment, an apparatus to identify chemical and spatial properties of nanoparticles in a semiconductor cleaning solution, comprises a broadband light source to provide an excitation beam; a focusing lens in a path of the excitation beam to form a focused excitation beam; a sample cell, the sample cell configured to hold a cleaning solution and one or more insoluble analytes-of-interest therein; a plurality of optical lens in the path of one or more fluorescence signals to focus the one or more fluorescence signals; and an imaging device, wherein the imaging device captures the one or more fluorescence signals to form a plurality of images that contain both spatial data and spectral data about the one or more insoluble analytes-of-interest.Type: ApplicationFiled: June 13, 2023Publication date: December 21, 2023Inventors: Viswanath BAVIGADDA, Shubhayan BHATTACHARYA, Tapashree ROY, Ankur KADAM, Kiran Rangaswamy AATRE, Suraj RENGARAJAN
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Publication number: 20230230234Abstract: A system and method of performing deep cell body segmentation on a biological sample is provided. The method includes receiving a first and a second stained image. The first image is processed using a trained machine learned model that outputs locations of a plurality of cell nuclei in the first stained image. Seed points are then determined based on the locations of the plurality of cell nuclei. The second image is then processed using the seed points to determine a plurality of cell membranes using a watershed segmentation. The second image is then post-processed and an output image is produced. The output image is then analyzed and gene sequencing is performed.Type: ApplicationFiled: January 13, 2023Publication date: July 20, 2023Inventors: Sumit Kumar Jha, Dan Xie, Arina Nikitina, Debjit Ray, Yun-Ching Chang, Suraj Rengarajan
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Publication number: 20220309670Abstract: Methods and systems for visualizing information on gigapixels Whole Slide Image are described. In an example, a method for visualizing information includes providing an image viewer with a list of information to visualize, loading an image and a mask for an information source, and dynamically finding a zoom factor. If the zoom factor is not suitable for fine detailed view, then information for a coarse mask is shown. If the zoom factor is suitable for fine detailed view, then information for a fine detailed mask is chosen from a plurality of information sources.Type: ApplicationFiled: February 25, 2022Publication date: September 29, 2022Inventors: Sumit Jha, Divakar Dass, Nisarg Shah, Mayukh Bhattacharyya, Suraj Rengarajan
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Publication number: 20220270870Abstract: A processing method comprises positioning a substrate in a processing chamber and setting a temperature of the substrate to a range of 50° C. to 500° C.; conducting an atomic layer deposition (ALD) cycle on the substrate; and repeating the ALD cycle to form a silicon oxide film. The ALD cycle comprises: exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor; purging the processing chamber of the aminosilane precursor; exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent for a duration in a range of greater than or equal to 100 milliseconds to less than or equal to 3 seconds; and purging the processing chamber of the oxidizing agent.Type: ApplicationFiled: February 9, 2022Publication date: August 25, 2022Applicant: Applied Materials, Inc.Inventors: Geetika Bajaj, Prerna Sonthalia Goradia, Seshadri Ganguli, Srinivas Gandikota, Robert Jan Visser, Suraj Rengarajan
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Publication number: 20180327893Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.Type: ApplicationFiled: July 11, 2018Publication date: November 15, 2018Inventors: Peijun DING, Rong TAO, Zheng XU, Daniel C. LUBBEN, Suraj RENGARAJAN, Michael A. MILLER, Arvind SUNDARRAJAN, Xianmin TANG, John C. FORSTER, Jianming FU, Roderick C. MOSELY, Fusen CHEN, Praburam GOPALRAJA
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Patent number: 10047430Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.Type: GrantFiled: March 11, 2014Date of Patent: August 14, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan, Michael A. Miller, Arvind Sundarrajan, Xianmin Tang, John C. Forster, Jianming Fu, Roderick C. Mosely, Fusen Chen, Praburam Gopalraja
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Publication number: 20140305802Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.Type: ApplicationFiled: March 11, 2014Publication date: October 16, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Peijun DING, Rong TAO, Zheng XU, Daniel C. LUBBEN, Suraj RENGARAJAN, Michael A. MILLER, Arvind SUNDARRAJAN, Xianmin TANG, John C. FORSTER, Jianming FU, Roderick C. MOSELY, Fusen CHEN, Praburam GOPALRAJA
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Patent number: 8696875Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).Type: GrantFiled: November 14, 2002Date of Patent: April 15, 2014Assignee: Applied Materials, Inc.Inventors: Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan, Michael A. Miller, Arvind Sundarrajan, Xianmin Tang, John C. Forster, Jianming Fu, Roderick C. Mosely, Fusen Chen, Praburam Gopalraja
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Patent number: 8668816Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.Type: GrantFiled: October 31, 2007Date of Patent: March 11, 2014Assignee: Applied Materials Inc.Inventors: Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan, Michael A. Miller, Arvind Sundarrajan, Xianmin Tang, John C. Forster, Jianming Fu, Roderick C. Mosely, Fusen Chen, Praburam Gopalraja
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Patent number: 7749361Abstract: A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.Type: GrantFiled: June 2, 2006Date of Patent: July 6, 2010Assignee: Applied Materials, Inc.Inventors: Jie Chen, Peijun Ding, Suraj Rengarajan, Ling Chen, Tram Vo
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Patent number: 7687909Abstract: A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.Type: GrantFiled: May 30, 2007Date of Patent: March 30, 2010Assignee: Applied Materials, Inc.Inventors: Peijun Ding, Zheng Xu, Hong Zhang, Xianmin Tang, Praburam Gopalraja, Suraj Rengarajan, John C. Forster, Jianming Fu, Tony Chiang, Gongda Yao, Fusen E. Chen, Barry L. Chin, Gene Y. Kohara
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Publication number: 20090233438Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.Type: ApplicationFiled: July 30, 2008Publication date: September 17, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Peijun DING, Rong TAO, Zheng XU, Daniel C. LUBBEN, Suraj RENGARAJAN, Michael A. MILLER, Arvind SUNDARRAJAN, Xianmin TANG, John C. FORSTER, Jianming FU, Roderick C. MOSELY, Fusen CHEN, Praburam GOPALRAJA
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Publication number: 20090053888Abstract: A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.Type: ApplicationFiled: October 20, 2008Publication date: February 26, 2009Inventors: Peijun Ding, Zheng Xu, Hong Zhang, Xianmin Tang, Praburam Gopalraja, Suraj Rengarajan, John C. Forster, Jianming Fu, Tony Chiang, Gongda Yao, Fusen E. Chen, Barry L. Chin, Gene Y. Kohara
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Publication number: 20080110747Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.Type: ApplicationFiled: October 31, 2007Publication date: May 15, 2008Applicant: APPLIED MATERIALS, INC.Inventors: Peijun DING, Rong TAO, Zheng XU, Daniel LUBBEN, Suraj RENGARAJAN, Michael MILLER, Arvind SUNDARRAJAN, Xianmin TANG, John FORSTER, Jianming FU, Roderick MOSELY, Fusen CHEN, Praburam GOPALRAJA
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Publication number: 20080014732Abstract: An aluminum bondpad and method for making the aluminum bondpad is disclosed. In forming aluminum bondpads, a barrier layer is necessary between a copper interconnect layer and the aluminum bondpad layer. Additionally, a gold wiring layer is deposited on the aluminum bondpad layer and annealed at a high temperature to form an aluminum-gold intermetallic compound. Aluminum reacts with tungsten at high temperatures. Therefore, during the annealing, the aluminum will react with the tungsten. By providing a tungsten nitride barrier layer on a tungsten barrier layer, no aluminum-tungsten intermetallic compound will form, even at the high annealing temperatures required to form the aluminum bondpad.Type: ApplicationFiled: July 7, 2006Publication date: January 17, 2008Inventors: Yanping Li, Lisa Yang, Suraj Rengarajan
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Publication number: 20070278089Abstract: A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.Type: ApplicationFiled: June 2, 2006Publication date: December 6, 2007Applicant: Applied Materials, Inc.Inventors: Jie Chen, Peijun Ding, Suraj Rengarajan, Ling Chen, Tram Vo
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Publication number: 20070241458Abstract: A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.Type: ApplicationFiled: May 30, 2007Publication date: October 18, 2007Inventors: Peijun Ding, Zheng Xu, Hong Zhang, Xianmin Tang, Praburam Gopalraja, Suraj Rengarajan, John Forster, Jianming Fu, Tony Chiang, Gongda Yao, Fusen Chen, Barry Chin, Gene Kohara
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Patent number: 7253109Abstract: We have discovered a method of providing a thin, approximately from about 2 ? to about 100 ? thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 ??cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.Type: GrantFiled: February 28, 2005Date of Patent: August 7, 2007Assignee: Applied Materials, Inc.Inventors: Peijun Ding, Zheng Xu, Hong Zhang, Xianmin Tang, Praburam Gopalraja, Suraj Rengarajan, John C. Forster, Jianming Fu, Tony Chiang, Gongda Yao, Fusen E. Chen, Barry L. Chin, Gene Y. Kohara
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Patent number: 7014887Abstract: The present invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layer are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture.Type: GrantFiled: September 2, 1999Date of Patent: March 21, 2006Assignee: Applied Materials, Inc.Inventors: Barney M. Cohen, Suraj Rengarajan, Xiangbing Li, Kenny King-Tai Ngan, Peijun Ding