Abstract: A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction semiconductor device includes an active region including a thin first alternating conductivity type layer and a heavily doped n+-type intermediate drain layer between first alternating conductivity type layer and an n++-type drain layer, and a breakdown withstanding region including a thick second alternating conductivity type layer. Alternatively, active region includes a first alternating conductivity type layer and a third alternating conductivity type layer between first alternating conductivity type layer and n++-type drain layer, third alternating conductivity type layer being doped more heavily than first alternating conductivity type layer.

Abstract: A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The bidirectional semiconductor device includes a first n-channel MOSFET including base regions, a second n-channel MOSFET including base regions, and an alternating conductivity type layer formed of drift region and partition regions arranged alternately. Partition regions are isolated from base regions by a high resistivity region and from base regions by a high resistivity region to maintaining a high breakdown voltage between first MOSFET and the second MOSFET. By connecting high resistivity regions and via drift regions to each other, a current is made flow from the first MOSFET to the second MOSFET and vice versa and the on-voltage is reduced.

Abstract: The super-junction semiconductor device facilitates increased switching speed and reduced on-resistance, and it includes an alternating conductivity type layer 11 formed of n-type drift regions 11a and p-type partition regions 11b arranged alternately, a pair of the n-type drift region 11a and p-type partition region 11b being repeated at a repeating pitch P1, and trenches 14, each containing a gate electrode 16 buried therein, the trenches 14 being arranged repeatedly at a repeating pitch P2 wider than the repeating pitch P1. The device further includes one or more n-type channel regions between a p-type partition regions 11b and a p-type well region 12.

Abstract: A semiconductor device facilitates preventing hot carriers from being injected into the insulation film so that the characteristics and the reliability of the active region thereof may not be impaired. The device includes an alternating-conductivity-type drain including heavily doped p-type breakdown voltage limiter regions in the portions of p-type partition regions in contact with the well bottoms of p-type base regions. Since the electric field in the central portion of breakdown voltage limiter regions reaches the critical value in advance to the electric field at the points E beneath gate insulation films the electric field at the points E is relaxed and hot carrier injection into gate insulation films is prevented.

Abstract: A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in the curved sections of the alternating conductivity type layer.

Abstract: This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.

Abstract: A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the current capacity thereof. The super-junction semiconductor device includes a semiconductor chip having a first major surface and a second major surface facing in opposite to the first major surface; a layer with low electrical resistance on the side of the second major surface; a first alternating conductivity type layer on low resistance layer, and a second alternating conductivity type layer on the first alternating conductivity type layer. The first alternating conductivity type layer including regions of a first conductivity type and regions of a second conductivity type arranged alternately with each other.

Abstract: Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternating conductivity type layer formed of n drift current path regions and p partition regions arranged alternately with each other, and a breakdown withstanding region with a second alternating conductivity type layer formed of n regions and p regions arranged alternately with each other, the breakdown withstanding region providing no current path in the ON-state of the device and being depleted in the OFF-state of the device. Since depletion layers expand in both directions from multiple pn-junctions into n regions and p regions in the OFF-state of the device, the adjacent areas of p-type base regions, the outer area of the semiconductor chip and the deep area of the semiconductor chip are depleted.

Abstract: This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.