Abstract: A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film.

Abstract: A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film. All the processing steps of the sensor are conducted solely on the main surface of the semiconductor substrate, namely, on a single side.

Abstract: In a 3-terminal package sealed semiconductor device such as a transistor or a thyristor, an insulator formed between the respective lead conductors is made of alumina ceramic. An electrode conductor base (one of the lead conductors) for mounting a semiconductor device thereon is made of a copper-tungsten sintered alloy containing 2% by volume to 48% by volume of copper. The thermal expansion coefficient of the insulator becomes substantially the same as that of the electrode conductor base, thereby elmininating a conventionally used intermediate damping member and hence providing a compact semiconductor apparatus which has a high packaging density and which can switch a large current at high speed. The respective lead conductors have predetermined sizes to achieve high-speed large-current switching.

Abstract: Semiconductor strain measuring apparatus for producing electrical output signals indicative of physical strains, in which a single crystal silicon substrate has the impurity concentration within the range between 1.times.10.sup.16 cm.sup.-3 and 2.times.10.sup.19 cm.sup.-3, thereby inhibiting the increase in the reverse leakage current flowing from the strain gauge through the substrate at high temperatures and thus enabling exact measurements even at high temperatures above 180.degree. C.

Abstract: A semiconductor transducer has a strain sensitive region, at least one strain gage formed integrally with a major surface of the strain sensitive region corresponding to a major surface of a monocrystalline silicon substrate, a bridge circuit including the strain gage, an operational amplifier, an input terminal of which is connected to an output terminal of the bridge circuit, and parallel-connected resistors which are integrally formed on the major surface of the monocrystalline silicon substrate and each of which has two ends connected to the input terminal and an output terminal of the operational amplifier, respectively, the strain sensitive region, the strain gage, the operational amplifier and the parallel-connected resistors being formed on the monocrystalline silicon substrate, wherein a difference between a temperature coefficient of resistance of the strain gage and a temperature coefficient of sensitivity thereof is set to be substantially the same as a temperature coefficient of resistance of the