Abstract: In order to suppress deterioration in charge balance and maintain excellent withstand voltage characteristics after forming a super junction structure on a semiconductor substrate, a plurality of columnar first epitaxial layers are respectively formed on a surface of a substrate main body at predetermined intervals, and a plurality of second epitaxial layers are respectively formed in trenches between the plurality of first epitaxial layers. A concentration distribution of a dopant included in the first epitaxial layer in a surface parallel with the surface of the substrate main body is configured to match with a concentration distribution of a dopant included in the second epitaxial layer in a surface parallel with the surface of the substrate main body.

Abstract: A resistivity of an epitaxial layer in a trench is changed in a stepwise manner by reducing a quantity of an impurity diffused into the epitaxial layer in the trench from a semiconductor wafer in a stepwise manner, thereby suppressing an influence of auto-doping from the semiconductor wafer. An epitaxial layer 17 is grown in a trench 16 of a semiconductor wafer 10 having a trench structure by gradually reducing a temperature in a temperature in the range of 400 to 1150° C. by a vapor growth method while supplying a silane gas as a raw material gas, thereby filling the epitaxial layer 17 in the trench 16.

Abstract: In order to suppress deterioration in charge balance and maintain excellent withstand voltage characteristics after forming a super junction structure on a semiconductor substrate, a plurality of columnar first epitaxial layers are respectively formed on a surface of a substrate main body at predetermined intervals, and a plurality of second epitaxial layers are respectively formed in trenches between the plurality of first epitaxial layers. A concentration distribution of a dopant included in the first epitaxial layer in a surface parallel with the surface of the substrate main body is configured to match with a concentration distribution of a dopant included in the second epitaxial layer in a surface parallel with the surface of the substrate main body.

Abstract: Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layer 11 on the surface of a silicon substrate 13, a step of forming a trench 14 in this epitaxial layer, and a step of filling the inside of the trench 14 with the epitaxial film 12, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Y?m/min, in the case when the aspect ratio of the trench is less than 10, an expression Y<0.2X+0.10 is satisfied, and in the case that the aspect ratio of the trench is between 10 and less than 20, an expression Y<0.2X+0.

Abstract: A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as ?. The second epitaxial film has an impurity concentration defined as ?. The arsenic concentration and the impurity concentration has a relationship of: ??3×33 109×ln(?)?1×1021.

Abstract: A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

Abstract: A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.