Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.

Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.

Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

Abstract: An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern.

Abstract: An image sensor is provided. The image sensor includes a substrate including a first side on which light is incident and a second side opposite the first side; a first separation pattern extending from the second side, the first separation pattern being interposed between unit pixels in the substrate of a light-receiving region and a light-shielding region provided around the light-receiving region; a second separation pattern extending from the first side and overlapping the first separation pattern, the second separation pattern being provided in the substrate of the light-receiving region; and a contact film electrically connected to the first separation pattern, the contact film being provided in the substrate of the light-shielding region. A contact trench which extends from the first side is formed in the light-shielding region of the substrate and exposes the first separation pattern, and the contact film fills at least a part of the contact trench.

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 ? or less.

Abstract: A bulk-acoustic wave resonator includes a resonator, including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate; and an insertion layer disposed below the piezoelectric layer, and configured to partially elevate the piezoelectric layer and the second electrode, wherein the insertion layer may be formed of a material containing silicon (Si), oxygen (O), and nitrogen (N).

Abstract: Disclosed is a system including at least one network interface; at least one processor operatively connected to the at least one network interface; and at least one memory configured to store a plurality of versions of software updates for a group of mobile devices and operatively connected to the at least one processor, wherein the at least one memory stores instructions causing the at least one processor, when executed, to receive a request for providing a list of software updates from an external server through the at least one network interface, to generate the list of the software updates, the list including information on a plurality of versions of the software updates, to provide the list to the external server through the at least one network interface, to receive a request for providing a selected version of the software update from one of the mobile devices through the at least one network interface, and to provide the selected version of the software update to the one of the mobile devices through

Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.

Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.

Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

Abstract: The present disclosure relates to an ensemble-based reservoir characterization method using multiple Kalman gains and dynamic data selection. The method includes preparing available data; generating initial ensembles by using the prepared static data; clustering and separating the generated initial models on the basis of a distance-based method; selecting the dynamic data; dynamically simulating the selected dynamic data by using the generated ensembles; calculating multiple Kalman gains by using initial models clustered in the same group as the selected dynamic data; updating ensemble members by means of the selected dynamic data and the multiple Kalman gains; and predicting a movement of a reservoir by using the updated models, and evaluating uncertainty thereof. Therefore, multiple Kalman gains are calculated and a final model is obtained using the selected dynamic data, and a reliable uncertainty evaluation and a future movement prediction can be performed within a short time by using the final model.

Abstract: A quick charger for a vehicle performs normal charging or quick charging depending on whether a device connected thereto supports quick charging. The quick charger includes: an input terminal receiving power from a vehicle; an output port configured to be connected to an electronic device and comprising a power port and a communication port; and a charging voltage changing module configured to convert a voltage of the power applied to the input terminal into a normal charging voltage or a quick charging voltage larger than the normal charging voltage, depending on a level of a voltage sensed at the communication port connected to the electronic device, wherein the electronic device is charged with the normal charging voltage at a normal speed and is charged with the quick charging voltage at a faster speed than the normal speed. With the above-described configuration, the quick charger can automatically perform normal charging or quick charging depending on the type of the electronic device connected thereto.

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 ? or less.

Abstract: The present disclosure provides an electron generation apparatus includes: a discharge pin module having a support plate and a plurality of discharge pins coupled to the support plate; a discharge plate module disposed to be spaced apart from the plurality of discharge pins; a discharge plate slidably coupled inside the discharge plate module; a support structure having a coupling plate to which the discharge pin module and the discharge plate module are detachably coupled; and a circuit module having a main board located at a side opposite to the discharge pin module with the coupling plate being interposed therebetween and a plurality of distributed processing boards connected to the main board to apply a high-voltage, high-frequency pulse power to the plurality of discharge pins individually.

Abstract: An acoustic resonator includes: a substrate; a resonance part mounted on the substrate and including resonance part electrodes, the resonance part being configured to generate acoustic waves; a cavity disposed between the resonance part and the substrate; a frame part disposed on at least one electrode among the resonance part electrodes, and being configured to reflect the acoustic waves; and a connection electrode configured to connect the at least one electrode to an external electrode, and having a thickness less than a thickness of the at least one electrode.

Abstract: A MEMS device includes a substrate, a MEMS element portion disposed on a surface of the substrate, a cap having a cavity formed to oppose the MEMS element portion, and a diffusion prevention layer formed on at least a portion of the cap, wherein at least one of the cap and the substrate includes a bonding layer disposed outside of the cavity, and wherein the cap includes a spreading prevention portion disposed between the bonding layer and the cavity and having a V-shape in cross-section.

Abstract: A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.

Abstract: A bulk acoustic wave resonator device includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed over a portion of the lower electrode; an upper electrode disposed on the piezoelectric layer; and a shape control layer covering an edge of a cavity disposed between the substrate and the lower electrode, wherein tensile stress is applied to the shape control layer during formation of the shape control layer.