Patents by Inventor Tae Hun Lee
Tae Hun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200249938Abstract: Disclosed is a system including at least one network interface; at least one processor operatively connected to the at least one network interface; and at least one memory configured to store a plurality of versions of software updates for a group of mobile devices and operatively connected to the at least one processor, wherein the at least one memory stores instructions causing the at least one processor, when executed, to receive a request for providing a list of software updates from an external server through the at least one network interface, to generate the list of the software updates, the list including information on a plurality of versions of the software updates, to provide the list to the external server through the at least one network interface, to receive a request for providing a selected version of the software update from one of the mobile devices through the at least one network interface, and to provide the selected version of the software update to the one of the mobile devices throughType: ApplicationFiled: September 17, 2018Publication date: August 6, 2020Inventors: Kyoung Heun SHIN, Junha KIM, Tae Hun LEE, Tae Yoon HWANG
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Patent number: 10734968Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 ? or less.Type: GrantFiled: July 12, 2017Date of Patent: August 4, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Tae Yoon Kim, Dae Ho Kim, Chang Hyun Lim, Tae Hun Lee, Sang Kee Yoon, Jong Woon Kim, Won Han, Moon Chul Lee
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Patent number: 10720900Abstract: An acoustic resonator including a substrate, an active vibration region including, sequentially stacked on the substrate, a lower electrode, a piezoelectric layer, and an upper electrode, and a horizontal resonance suppressing part formed from and disposed in the piezoelectric layer, the horizontal resonance suppressing part having piezoelectric physical properties that are different from piezoelectric physical properties of the piezoelectric layer.Type: GrantFiled: December 27, 2016Date of Patent: July 21, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun Lee, Won Han, Moon Chul Lee, Sung Han
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Publication number: 20200169246Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.Type: ApplicationFiled: June 10, 2019Publication date: May 28, 2020Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Tae Yoon KIM, Tae Kyung LEE, Sang Kee YOON, Sung Jun LEE, Chang Hyun LIM, Nam Jung LEE, Tae Hun LEE, Moon Chul LEE
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Publication number: 20200119713Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.Type: ApplicationFiled: April 26, 2019Publication date: April 16, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Yoon KIM, Chang Hyun LIM, Sang Kee YOON, Tae Kyung LEE, Moon Chul LEE, Tae Hun LEE
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Publication number: 20200087141Abstract: A MEMS device includes a substrate, a MEMS element portion disposed on a surface of the substrate, a cap having a cavity formed to oppose the MEMS element portion, and a diffusion prevention layer formed on at least a portion of the cap, wherein at least one of the cap and the substrate includes a bonding layer disposed outside of the cavity, and wherein the cap includes a spreading prevention portion disposed between the bonding layer and the cavity and having a V-shape in cross-section.Type: ApplicationFiled: March 19, 2019Publication date: March 19, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun LEE, Kwang Su KIM, Tae Yoon KIM
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Publication number: 20200091888Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.Type: ApplicationFiled: March 18, 2019Publication date: March 19, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun LEE, Tae Yoon KIM, Moon Chul LEE, Chang Hyun LIM, Nam Jung LEE, Il Han LEE
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Patent number: 10554191Abstract: A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.Type: GrantFiled: June 15, 2017Date of Patent: February 4, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Chang Hyun Lim, Han Tae Kim, Tae Hun Lee, Tae Kyung Lee, Tae Yoon Kim
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Patent number: 10541665Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.Type: GrantFiled: January 22, 2018Date of Patent: January 21, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Moon Chul Lee, Tah Joon Park, Jae Chang Lee, Tae Yoon Kim, Chang Hyun Lim, Hwa Sun Lee, Tae Hun Lee, Hyun Min Hwang, Tae Kyung Lee
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Patent number: 10476463Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.Type: GrantFiled: November 17, 2017Date of Patent: November 12, 2019Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun Lee, Chang Hyun Lim, Tae Yoon Kim, Moon Chul Lee
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Patent number: 10396751Abstract: An acoustic wave filter device includes a lower electrode disposed between a substrate and a piezoelectric layer, an upper electrode disposed on the piezoelectric layer, and an insulating layer disposed on the upper electrode. The insulating layer exposes portions of the upper electrode.Type: GrantFiled: December 20, 2016Date of Patent: August 27, 2019Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Tae Hun Lee, Dae Hun Jeong, Moon Chul Lee, Sang Uk Son
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Patent number: 10298197Abstract: A bulk acoustic wave resonator includes: a substrate; a cavity forming layer disposed on the substrate so as to form a cavity; a lower electrode disposed on the cavity; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer; and a temperature compensation layer disposed below the lower electrode and in the cavity portion.Type: GrantFiled: April 14, 2017Date of Patent: May 21, 2019Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Moon Chul Lee, Jae Chang Lee, Chang Hyun Lim, Tae Hun Lee, Tae Kyung Lee, Tae Yoon Kim
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Patent number: 10267699Abstract: A pressure sensor element includes a die; a cavity and a trench formed in one surface of the die and defining therebetween a partition wall integral with and formed of the same material as the die; and a membrane formed on the die and covering the cavity and the trench.Type: GrantFiled: February 17, 2016Date of Patent: April 23, 2019Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Chang Hyun Lim, Dae Hun Jeong, Tae Hun Lee
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Publication number: 20190074697Abstract: A quick charger for a vehicle performs normal charging or quick charging depending on whether a device connected thereto supports quick charging. The quick charger includes: an input terminal receiving power from a vehicle; an output port configured to be connected to an electronic device and comprising a power port and a communication port; and a charging voltage changing module configured to convert a voltage of the power applied to the input terminal into a normal charging voltage or a quick charging voltage larger than the normal charging voltage, depending on a level of a voltage sensed at the communication port connected to the electronic device, wherein the electronic device is charged with the normal charging voltage at a normal speed and is charged with the quick charging voltage at a faster speed than the normal speed. With the above-described configuration, the quick charger can automatically perform normal charging or quick charging depending on the type of the electronic device connected thereto.Type: ApplicationFiled: April 23, 2018Publication date: March 7, 2019Inventors: Chang-Hoon Lee, Wook-Hyun Choi, Sung-Min Kim, Tae-Hun Lee
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Patent number: 10137533Abstract: A multi-functional apparatus for testing and etching a substrate capable of increasing spatial efficiency and manufacturing efficiency by performing testing and etching operations in a same chamber body and a substrate processing apparatus including the same, the multi-functional apparatus including a chamber body having an entrance into which the substrate is injected in one of its sides and an exit from which the substrate is ejected in another one of its sides; a transfer unit disposed inside of the chamber body and for transferring the injected substrate in a direction from the entrance to the exit; a laser etching unit disposed on an upper portion of the transfer unit and for etching a part of the substrate disposed on the transfer unit; and a testing unit for testing the substrate disposed on the transfer unit.Type: GrantFiled: May 16, 2016Date of Patent: November 27, 2018Assignee: Samsung Display Co., Ltd.Inventors: Sung-Hwan Kim, Sang-Su Kim, Byoung-Seong Jeong, Je-Hyun Song, Tae-Hun Lee, Sung-Won Yang, Tae-Hyung Kim
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Publication number: 20180337650Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.Type: ApplicationFiled: November 17, 2017Publication date: November 22, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun LEE, Chang Hyun LIM, Tae Yoon KIM, Moon Chul LEE
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Publication number: 20180337656Abstract: A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.Type: ApplicationFiled: November 16, 2017Publication date: November 22, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun LEE, Chang Hyun LIM, Tae Yoon KIM, Moon Chul LEE
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Publication number: 20180294792Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.Type: ApplicationFiled: January 22, 2018Publication date: October 11, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Moon Chul LEE, Tah Joon PARK, Jae Chang LEE, Tae Yoon KIM, Chang Hyun LIM, Hwa Sun LEE, Tae Hun LEE, Hyun Min HWANG, Tae Kyung LEE
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Patent number: 10096637Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.Type: GrantFiled: March 2, 2017Date of Patent: October 9, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Young Woo Chung, Tae Hun Lee, Hee Geun Jeong
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Publication number: 20180234075Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode connecting member disposed on the substrate; a resonating member including a lower electrode disposed on the lower electrode connecting member, a piezoelectric layer disposed on the lower electrode, and an upper electrode disposed on the piezoelectric layer; and an upper electrode connecting member electrically connecting the upper electrode and the substrate to each other. The upper electrode connecting member is extended from the substrate outside of the resonating member and is connected to a top surface of the upper electrode. The lower electrode connecting member electrically connects the lower electrode and the substrate to each other and includes a ring shape corresponding to a shape of the resonating member so as to support an edge of the resonating member.Type: ApplicationFiled: November 10, 2017Publication date: August 16, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun Lee, Dae Hun Jeong, Chang Hyun Lim, Tae Yoon Kim, Moon Chul Lee