Patents by Inventor Tae Hyung Kim

Tae Hyung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11850388
    Abstract: A method of manufacturing a microneedle includes selecting and providing a microneedle material whose viscosity/elastic modulus measured for each shear rate using a viscoelasticity measuring equipment falls in a range between a predetermined upper limit and a predetermined lower limit, and manufacturing the microneedle using the microneedle material by an extension process.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: December 26, 2023
    Assignee: RAPHAS CO., LTD.
    Inventors: Ju Young Jin, Moon Su Lee, Tae Hyung Kim, Jung Dong Kim, Do Hyeon Jeong
  • Publication number: 20230411076
    Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.
    Type: Application
    Filed: August 24, 2023
    Publication date: December 21, 2023
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hee Sun CHUN, Hui Sun PARK, Tae Hyung KIM, Jeong Wook SEO, Hyo Ju LEE, Hyeg Soon AN, Jin Woo KIM, Seok Hyun YOON
  • Publication number: 20230406706
    Abstract: The present invention relates to entangled-type carbon nanotubes which have a bulk density of 31 kg/m3 to 85 kg/m3 and a ratio of tapped bulk density to bulk density of 1.37 to 2.05, and a method for preparing the entangled-type carbon nanotubes.
    Type: Application
    Filed: February 28, 2023
    Publication date: December 21, 2023
    Inventors: Sung Jin Kim, Dong Hyun Cho, Jae Keun Yoon, Tae Hyung Kim, Og Sin Kim
  • Publication number: 20230392074
    Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
    Type: Application
    Filed: August 21, 2023
    Publication date: December 7, 2023
    Inventors: Jeong Hee LEE, Eun Joo JANG, Hyun A KANG, Tae Hyung KIM
  • Patent number: 11834597
    Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR??Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: December 5, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong Hee Lee, Hyun A Kang, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Yuho Won, Eun Joo Jang
  • Publication number: 20230389258
    Abstract: An integrated circuit includes a static random access memory (SRAM) device. The SRAM device includes an SRAM unit cell that includes a first output node to which a first pull-up transistor, a first pull-down transistor, and a second pull-down transistor are commonly connected, and a second output node to which a second pull-up transistor, a third pull-down transistor, and a fourth pull-down transistor are commonly connected. The first output node is connected to a first gate electrode, a second gate electrode, a first connection wiring line, a first node formation pattern, and a first active contact, and a layout of the first output node, the first gate electrode, the second gate electrode, the first connection wiring line, the first node formation pattern, and the first active contact forms a first fork shape.
    Type: Application
    Filed: May 24, 2023
    Publication date: November 30, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eo Jin Lee, Ho Young Tang, Tae-Hyung Kim, Dae Young Moon
  • Patent number: 11832468
    Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: November 28, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hongkyu Seo, Kwanghee Kim, Eun Joo Jang, Won Sik Yoon, Tae Hyung Kim, Tae Ho Kim
  • Patent number: 11832514
    Abstract: Disclosed are a novel organic compound, and an organic electroluminescent element having improved characteristics, such as luminous efficiency, driving voltage, and lifespan, by containing the novel organic compound in one or more organic material layers.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: November 28, 2023
    Assignee: SOLUS ADVANCED MATERIALS CO., LTD.
    Inventors: Min-Sik Eum, Hojun Son, Woo Jae Park, Tae Hyung Kim, Jiyi Kim, Youngmi Beak
  • Publication number: 20230337443
    Abstract: Provided are a three-dimensional (3D) semiconductor integrated circuit and a static random access memory (SRAM) device. The three-dimensional (3D) semiconductor integrated circuit includes: a first die including a power supply circuit a second die including an SRAM with a through-silicon-via (TSV) bundle region; a third die including a processor; and TSVs, each of which is provided on the TSV bundle region and extends from the TSV bundle region to the third die. The SRAM device includes: a bank array with banks, each of which includes sub-bit-cell arrays and a local peripheral circuit region arranged in a cross (+) shape between the sub-bit-cell arrays; and a global peripheral circuit region including a tail peripheral circuit region extending in a first direction and a head peripheral circuit region extending in a second direction, the tail peripheral circuit region and the head peripheral circuit region being arranged in a “T” shape.
    Type: Application
    Filed: March 27, 2023
    Publication date: October 19, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ho Young TANG, Tae-Hyung KIM, Dae Young MOON, Sang-Yeop BAECK, Dong-Wook SEO
  • Publication number: 20230335338
    Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer, and an external electrode disposed on the body. The dielectric layer includes a BaTiO3-based base material main ingredient, a sub-ingredient including Dy, and an additive. The additive is one or more of Sm, Gd and Tb, and a content of the additive is 25 mol or more and less than 50 mol relative to 100 mol of Dy. The dielectric layer includes a plurality of dielectric grains. When an average grain size of the plurality of dielectric grains is represented by G, and an average thickness of the dielectric layer is represented by td, 1.75?td/G?2.23 is satisfied.
    Type: Application
    Filed: August 31, 2022
    Publication date: October 19, 2023
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyeg Soon AN, Hui Sun PARK, Jeong Wook SEO, Tae Hyung KIM, Hee Sun CHUN, Hyo Ju LEE, Jin Woo KIM, Seok Hyun YOON
  • Publication number: 20230320822
    Abstract: According to at least one embodiment, a method of performing intraoral scanning includes: positioning a first scan body at a location of a first implant; positioning a second scan body at a location of a second implant; coupling a first clip to the first scan body; and coupling a second clip to the second scan body. The coupled first clip extends from the positioned first scan body towards the location of the second implant, and the coupled second clip extends from the positioned second scan body towards the location of the first implant.
    Type: Application
    Filed: April 7, 2023
    Publication date: October 12, 2023
    Applicant: DENTCA, Inc.
    Inventors: Tae Hyung KIM, Sun KWON
  • Patent number: 11784282
    Abstract: A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: October 10, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Oul Cho, Eun Joo Jang, Tae Hyung Kim
  • Publication number: 20230313038
    Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.
    Type: Application
    Filed: April 18, 2023
    Publication date: October 5, 2023
    Inventors: Sung Woo KIM, Jin A. KIM, Tae Hyung KIM, Jeong Hee LEE, Eun Joo JANG
  • Publication number: 20230317472
    Abstract: The present invention relates to a scanning system, and more particularly, to a scanning system capable of scanning a bevel region of a wafer subjected to a standard sampling treatment and quickly cleaning a bevel nozzle used in a scanning step. For this purpose, the scanning system of the present invention includes a bevel scanning nozzle unit that has a nozzle groove, through which a bevel portion of a wafer enters and exits, at a lower end side of a bevel nozzle and that scans a bevel region of the wafer with a predetermined volume of a scanning solution; a wafer mounting unit that mounts the wafer thereon and rotates the wafer at a predetermined speed; and a nozzle cleaning unit that has a cleaning chamber filled with a cleaning solution and having a cleaning solution overflow portion and that immerses and cleans the bevel scanning nozzle unit.
    Type: Application
    Filed: April 19, 2021
    Publication date: October 5, 2023
    Inventors: Munsik OH, Jung-Hwan KIM, Tae-Hyung KIM
  • Patent number: 11776750
    Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: October 3, 2023
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hee Sun Chun, Hui Sun Park, Tae Hyung Kim, Jeong Wook Seo, Hyo Ju Lee, Hyeg Soon An, Jin Woo Kim, Seok Hyun Yoon
  • Patent number: 11773233
    Abstract: The present invention relates to a carbon composite material and a method for producing the same, and more particularly, to a carbon composite material capable of improving electrostatic dispersibility and flame retardancy, and a method for producing the same. The carbon composite material according to the present invention can be effectively applied to products requiring conductivity and flame retardancy.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: October 3, 2023
    Assignee: LG CHEM, LTD.
    Inventors: Seokwon Kim, Se Hyun Kim, Tae Hyung Kim, Pyeong-Gi Kim, Suk Jo Choi, Dong Hyun Cho
  • Patent number: 11767472
    Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: September 26, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong Hee Lee, Eun Joo Jang, Hyun A Kang, Tae Hyung Kim
  • Publication number: 20230272277
    Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
    Type: Application
    Filed: April 17, 2023
    Publication date: August 31, 2023
    Inventors: Tae Hyung KIM, Hyun A KANG, Eun Joo JANG, Dae Young CHUNG
  • Patent number: 11744096
    Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.
    Type: Grant
    Filed: February 15, 2022
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae Young Chung, Kwanghee Kim, Eun Joo Jang, Tae Hyung Kim, Hongkyu Seo, Heejae Lee, Jaejun Chang
  • Patent number: 11737973
    Abstract: The present invention relates to a composition for preparing a microneedle, a soluble microneedle, and a microneedle percutaneous patch comprising the soluble microneedle. A soluble microneedle contained in a microneedle percutaneous patch of the present invention has a high drug loading capacity and excellent strength and thus may contain an effective amount of donepezil or a pharmaceutically acceptable salt thereof even with a small area of the microneedle. Accordingly, the present invention is economical and produces a lower level of skin irritation.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: August 29, 2023
    Assignee: Raphas Co., Ltd.
    Inventors: Tae Hyung Kim, Booyong Lee, Jung Dong Kim, Do Hyeon Jeong, Dongchul Shin, Yongyoun Hwang, Yun-Sun Nam, Joo Han Lee, Eun Jin An