Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

Abstract: Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.

Abstract: Methods, systems, devices and apparatuses for generating a high-quality MRI image from under-sampled or corrupted data The image reconstruction system includes a memory. The memory is configured to store multiple samples of biological, physiological, neurological or anatomical data that has missing or corrupted k-space data and a deep learning model or neural network. The image reconstruction system includes a processor coupled to the memory. The processor is configured to obtain the multiple samples. The processor is configured to determine the missing or corrupted k-space data using the multiple samples and the deep learning model or neural network. The processor is configured to reconstruct an MRI image using the determined missing or corrupted k-space data and the multiple samples.

Abstract: A light emitting element includes a first electrode, a second electrode, and a light emission layer interposed between the first electrode and the second electrode, where an emission efficiency of the light emission layer varies based on a voltage applied to at least one selected from the first electrode and the second electrode.

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A steel reinforcing bar contains 0.06 wt % to 0.11 wt % carbon, more than 0 and not more than 0.25 wt % silicon, 0.8 wt % or more and less than 2.0 wt % manganese, more than 0 and not more than 0.01 wt % phosphorus, more than 0 and not more than 0.01 wt % sulfur, 0.01 to 0.03 wt % aluminum, 0.50 to 1.00 wt % nickel, 0.027 to 0.125 wt % molybdenum, more than 0 and not more than 0.25 wt % chromium, more than 0 and not more than 0.28 wt % copper, more than 0 and not more than 0.01 wt % nitrogen, and the remainder being iron and unavoidable impurities. The reinforcing bar has a surface layer and a core. The surface layer has a hardened layer of tempered martensite, and the core has a mixed structure of bainite, ferrite and pearlite.

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

Abstract: An inkjet printhead includes a head body in which a first fine channel that is connected to an ink inlet and thus guides an inflow of ink, a second fine channel that is disposed below the first fine channel, communicated with the first fine channel through a connection via hole, and guides an outflow of the ink by being connected to an ink outlet, and a nozzle that is opened downward from the second fine channel are defined, and a micro heater that is disposed closer to the connection via hole in an upper portion of the first fine channel than to an end of the first fine channel where the first fine channel is connected to the ink inlet or an end of the second fine channel where the second fine channel is connected to the ink outlet.

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: A multilayer capacitor includes a capacitor body including an active region having dielectric layers and internal electrodes alternately stacked therein, the capacitor body including upper and lower covers disposed on upper and lower surfaces of the active region, respectively; and an external electrode disposed on an external surface of the capacitor body. In one of the upper and lower covers, a portion thereof between a boundary surface of the active region and a boundary surface of the capacitor body is divided into a first cover region adjacent to the active region and a second cover region adjacent to the boundary surface of the capacitor body, and the first cover region includes grains having a core-shell structure doped with Sn. The first cover region includes 20% or more of Sn-doped core-shell structure grains, compared to the total of grains in the first cover region.

Abstract: An integrated circuit includes a plurality of layers stacked in a first direction, a plurality of unit circuits at least partially overlapping each other in a second direction that is perpendicular to the first direction and configured to operate in parallel with one another, control circuitry configured to generate a control signal to control the plurality of unit circuits, and a multi-layer conducting line configured to transfer the control signal from the control circuitry to the plurality of unit circuits. The multi-layer conducting line may be integrally formed in a wiring layer and a via layer and extends in the second direction. The wiring layer and the via layer may be adjacent to each other.

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

Abstract: A ceramic electronic component includes: a body including an active portion, including a first dielectric layer and an internal electrode, and a margin portion disposed a side surface of the active portion and including a second dielectric layer; and an external electrode disposed on the body and connected to the internal electrode. The first and second dielectric layers have different dielectric compositions. The first dielectric layer includes tin (Sn) and dysprosium (Dy). The second dielectric layer includes magnesium (Mg).

Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.

Abstract: A multilayer capacitor includes a body including a laminate structure in which at least one first internal electrode and at least one second internal electrode are alternately stacked in a first direction with at least one dielectric layer therebetween, and first and second external electrodes spaced apart on the body, to be connected to at least one first internal electrode and at least one second internal electrode, respectively. The body includes, in a larger molar content, at least one selected from the group consisting of Dy, Tb, Y, Sm, Ho, Gd, Er, Ce, La and Nd in a capacitance formation region including a region between at least one first internal electrode and at least one second internal electrode than in a margin region including a region between a boundary line of at least one first internal electrode and at least one second internal electrode and a surface of the body.

Abstract: A display device according to some embodiments includes: a substrate; a plurality of common voltage lines positioned on the substrate; a plurality of connection electrodes positioned on a plurality of common voltage lines; an emission layer positioned on the connection electrode; and a common electrode positioned on the emission layer, wherein the emission layer has a plurality of first openings positioned on at least a portion of a plurality of connection electrodes, the common electrode is electrically connected to the connection electrode through a plurality of first openings, and a pitch of a first direction of a plurality of first openings has a range of about 0.1 mm to about 2.5 mm.

Abstract: A dielectric composition includes a BaTiO3-based component as a main component, a donor component including a first element and a second element each having a shorter ionic radius and greater atomic weight than Ba, and an acceptor component including at least one of Mg, Al, Mn and V. An ionic radius of the second element is greater than an ionic radius of the first element, a molar content of the second element is less than a molar content of the first element, and a molar content of the acceptor component is greater than a molar content of the donor component.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: According to a link mechanism type variable wheel deflector applied to a vehicle, a deflector coupled to a cover plate using a hinge boss as a rotation center can be operated using traveling resistant wind as a driving source, a piston receiving the linear movement of a link shaft by a moment arm rotated with the deflector can unfold the deflector while compressing an elastic member, and an elastic restoring force of the elastic member can be applied to the piston to return the link shaft and the moment arm to fold the deflector, thereby strengthening the repeated durability of the elastic member compared to the rotating motion of the spring, and in particular, the rotating motion and the linear motion can be implemented by the link motion mechanism apparatus connected to the deflector, thereby implementing the high durability performance with the low-cost mechanical structure.