Patents by Inventor Tae-Won Ha
Tae-Won Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240121948Abstract: A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.Type: ApplicationFiled: December 18, 2023Publication date: April 11, 2024Inventors: Jae Man YOON, Jin Hwan JEON, Tae Kyun KIM, Jung Woo PARK, Su Ock CHUNG, Jae Won HA
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Publication number: 20240090121Abstract: A printed circuit board includes a first substrate portion including a plurality of first insulating layers, a plurality of first wiring layers respectively disposed on the plurality of first insulating layers, and a plurality of first adhesive layers respectively disposed between the plurality of first insulating layers to respectively cover the plurality of first wiring layers; and a second substrate portion disposed on the first substrate portion, and including a plurality of second insulating layers, a plurality of second wiring layers respectively disposed on the plurality of second insulating layers, and a plurality of second adhesive layers respectively disposed between the plurality of second insulating layers to respectively cover the plurality of second wiring layers.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Dae Jung BYUN, Jung Soo KIM, Sang Hyun SIM, Chang Min HA, Tae Hong MIN, Jin Won LEE
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Publication number: 20240079456Abstract: A method of manufacturing a semiconductor device includes: forming a trench in an insulating interlayer by etching the insulating interlayer; forming a conductive layer on bottom, side, and upper surfaces of the insulating interlayer where the trench is formed, using a first deposition process, the conductive layer on the bottom surface of the trench being thicker than the conductive layer on the side surface of the trench; forming a sacrificial layer in the trench covering the conductive layer formed on the bottom surface of the trench using a second deposition process different from the first deposition process; selectively removing the conductive layer formed on the upper surface of the insulating interlayer and formed on the side surface of the trench left exposed through the sacrificial layer; and selectively removing the sacrificial layer, to form a conductive line using the conductive layer remaining on the bottom surface of the trench.Type: ApplicationFiled: January 10, 2023Publication date: March 7, 2024Applicant: SK hynix Inc.Inventors: Jae Man YOON, Jun Ki KIM, Tae Kyun KIM, Jung Woo PARK, Jae Won HA
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Patent number: 11581435Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.Type: GrantFiled: June 8, 2020Date of Patent: February 14, 2023Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
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Publication number: 20200303547Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.Type: ApplicationFiled: June 8, 2020Publication date: September 24, 2020Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
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Patent number: 10778134Abstract: An apparatus for controlling an inverter for driving a motor includes a processor which includes: a current processor for generating a voltage command for causing a current detection value obtained by measuring a current supplied from the inverter to the motor to follow a current command for driving the motor; a voltage modulator for generating a pulse width modulation signal for controlling on and off states of switching elements in the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor for setting a frequency change range within which the switching frequency will be randomly changed and randomly determining the switching frequency within the frequency change range when a random pulse width modulation method is applied to control of the inverter.Type: GrantFiled: December 4, 2018Date of Patent: September 15, 2020Assignees: Hyundai Motor Company, Kia Motors CorporationInventors: Sung Kyu Kim, Yong Jae Lee, Su Hyun Bae, Ho Joon Shin, Tae Won Ha, Joo Young Park
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Patent number: 10714614Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.Type: GrantFiled: August 22, 2018Date of Patent: July 14, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
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Patent number: 10692781Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.Type: GrantFiled: March 22, 2018Date of Patent: June 23, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Youn Kim, Ji Hwan An, Tae Won Ha, Se Ki Hong
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Patent number: 10630217Abstract: An apparatus for controlling an inverter for driving a motor including a processor which includes: a current processor configured to generate a voltage command for allowing a current detection value, generated by measuring a current provided from an inverter to a motor, to follow a current command for driving the motor; a voltage modulator configured to generate a pulse width modulation signal for controlling on and off states of a switching element within the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor configured to randomly change the switching frequency based on driving information of the motor.Type: GrantFiled: November 21, 2018Date of Patent: April 21, 2020Assignees: Hyundai Motor Company, Kia Motors CorporationInventors: Yong Jae Lee, Tae Won Ha, Su Hyun Bae, Ho Joon Shin, Sung Kyu Kim, Joo Young Park
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Patent number: 10580891Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.Type: GrantFiled: November 16, 2018Date of Patent: March 3, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Soo Kim, Gi-Gwan Park, Sang-Koo Kang, Koung-Min Ryu, Jae-Hoon Lee, Tae-Won Ha
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Patent number: 10553693Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.Type: GrantFiled: April 20, 2018Date of Patent: February 4, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Se Ki Hong, Ju Youn Kim, Jin-Wook Kim, Tae Eung Yoon, Tae Won Ha, Jung Hoon Seo, Seul Gi Yun
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Publication number: 20200028462Abstract: An apparatus for controlling an inverter for driving a motor includes a processor which includes: a current processor for generating a voltage command for causing a current detection value obtained by measuring a current supplied from the inverter to the motor to follow a current command for driving the motor; a voltage modulator for generating a pulse width modulation signal for controlling on and off states of switching elements in the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor for setting a frequency change range within which the switching frequency will be randomly changed and randomly determining the switching frequency within the frequency change range when a random pulse width modulation method is applied to control of the inverter.Type: ApplicationFiled: December 4, 2018Publication date: January 23, 2020Inventors: Sung Kyu Kim, Yong Jae Lee, Su Hyun Bae, Ho Joon Shin, Tae Won Ha, Joo Young Park
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Publication number: 20200028460Abstract: An apparatus for controlling an inverter for driving a motor including a processor which includes: a current processor configured to generate a voltage command for allowing a current detection value, generated by measuring a current provided from an inverter to a motor, to follow a current command for driving the motor; a voltage modulator configured to generate a pulse width modulation signal for controlling on and off states of a switching element within the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor configured to randomly change the switching frequency based on driving information of the motor.Type: ApplicationFiled: November 21, 2018Publication date: January 23, 2020Inventors: Yong Jae LEE, Tae Won HA, Su Hyun BAE, Ho Joon SHIN, Sung Kyu KIM, Joo Young PARK
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Publication number: 20190131417Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.Type: ApplicationFiled: April 20, 2018Publication date: May 2, 2019Inventors: Se Ki HONG, Ju Youn KIM, Jin-Wook KIM, Tae Eung YOON, Tae Won HA, Jung Hoon SEO, Seul Gi YUN
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Publication number: 20190088779Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.Type: ApplicationFiled: November 16, 2018Publication date: March 21, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-Soo KIM, Gi-Gwan PARK, Sang-Koo KANG, Koung-Min RYU, Jae-Hoon LEE, Tae-Won HA
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Patent number: 10177253Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.Type: GrantFiled: October 11, 2016Date of Patent: January 8, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Soo Kim, Gi-Gwan Park, Sang-Koo Kang, Koung-Min Ryu, Jae-Hoon Lee, Tae-Won Ha
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Publication number: 20180366582Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.Type: ApplicationFiled: August 22, 2018Publication date: December 20, 2018Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
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Patent number: 10084088Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.Type: GrantFiled: June 9, 2017Date of Patent: September 25, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
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Publication number: 20180211887Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.Type: ApplicationFiled: March 22, 2018Publication date: July 26, 2018Inventors: Ju Youn KIM, Ji Hwan AN, Tae Won HA, Se Ki HONG
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Patent number: 9972544Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.Type: GrantFiled: December 27, 2016Date of Patent: May 15, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Youn Kim, Ji Hwan An, Tae Won Ha, Se Ki Hong