Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: The present disclosure provides a radar object recognition method, which includes steps as follows. The radar image generation is performed on radar data to generate a radar image; the radar image is inputted into an object recognition model, so that the object recognition model outputs a recognition result; the post-process is performed on the recognition result to eliminate recognition errors from the recognition result.

Abstract: An optical device is provided. The optical device includes a ring waveguide and a bus waveguide. The ring waveguide includes a coupling region. The bus waveguide is disposed adjacent to and spaced apart from the coupling region of the ring waveguide. The bus waveguide includes a coupling structure corresponding to the coupling region.

Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.

Abstract: An optical coupler includes: a plurality of waveguide core layers formed from a waveguide core material having a first index of refraction, the waveguide core layers being (i) arranged in a stacked relationship one over another, (ii) spaced apart one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler toward a light output end of the optical coupler; and a cladding formed from a cladding material having a second index of refraction, the second index of refraction being less than the first index of refraction, the cladding material surrounding each of the plurality of waveguide core layers. Suitably, light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.

Abstract: A system and methods of forming a dielectric material within a trench are described herein. In an embodiment of the method, the method includes introducing a first precursor into a trench of a dielectric layer, such that portions of the first precursor react with the dielectric layer and attach on sidewalls of the trench. The method further includes partially etching portions of the first precursor on the sidewalls of the trench to expose upper portions of the sidewalls of the trench. The method further includes introducing a second precursor into the trench, such that portions of the second precursor react with the remaining portions of the first precursor to form the dielectric material at the bottom of the trench.

Abstract: An optical device is provided. The optical device includes a substrate, a first optical layer; a high k layer, and a second optical layer. The first optical layer is disposed on the substrate. The first optical layer comprises a top surface, a first sidewall, and a second side-wall opposite thereto. The high k layer is disposed on the top surface of the first optical layer. The second optical layer is disposed on the high k layer. The second optical layer includes a top surface, a third sidewall, and a fourth sidewall opposite thereto. The first sidewall of the first optical layer is misaligned with the third sidewall of the second optical layer. The second sidewall of the first optical layer is coplanar with the fourth sidewall of the second optical layer.

Abstract: Optical devices and methods of fabricating thereof that include providing two different optical paths: a first optical path including a first waveguide core and a first cladding layer adjacent the first waveguide core; and a second optical path including a second waveguide core and a second cladding layer adjacent the second waveguide core. A thermo-optic coefficient (TOC) of the first waveguide core and a TOC of the first cladding layer have a same sign, for example positive, and a sign of a TOC of the second waveguide core is different than a sign of a TOC of the second cladding layer, for example, one positive and one negative. The paths may be in an Mach-Zehnder Interferometer (MZI).

Abstract: The present disclosure provides a calibration system for wavelength-division multiplexing (WDM), a WDM system, and a calibrating method for WDM. The calibration system includes heating devices, an optical sensor, and an electrical device. When the optical sensor receives no beam with energy exceeding a threshold value from a first channel, the optical sensor transmits a first signal to the electrical device. In response to the first signal, the electrical device is configured to control the one or more of the heating devices to heat one or more of channels. When the optical sensor receives a beam having energy exceeding the threshold value from the first channel, the optical sensor transmits a second signal to the electrical device. In response to the second signal, the electrical device is configured to control the one or more of the heating devices to maintain the temperature of the one or more of the channels.

Abstract: A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.

Abstract: A method includes forming a gate stack on a semiconductor region, etching the gate stack to form a first trench separating the gate stack into a first gate stack portion and a second gate stack portion, and forming a gate isolation region filling the first trench. The gate isolation region includes a silicon nitride liner, and a silicon oxide filling-region overlapping a first bottom portion of the silicon nitride liner. The method further includes etching the gate stack to form a second trench and to reveal a protruding semiconductor fin, and etching the protruding semiconductor fin to extend the second trench into the bulk semiconductor substrate. A fin isolation region is formed to fill the second trench. The fin isolation region includes a silicon oxide liner, and a silicon nitride filling-region overlapping a second bottom portion of the silicon oxide liner.

Abstract: A semiconductor device a method of forming the same are provided. The semiconductor device includes a substrate, a first isolation structure and a second isolation structure over the substrate, a semiconductor fin over the substrate and between the first isolation structure and the second isolation structure, and a third isolation structure extending through the semiconductor fin and between the first isolation structure and the second isolation structure. A top surface of the semiconductor fin is above a top surface of the first isolation structure and a top surface of the second isolation structure. The third isolation structure includes a first dielectric material and a second dielectric material over the first dielectric material. An interface between the first dielectric material and the second dielectric material is below the top surface of the first isolation structure and the top surface of the second isolation structure.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: An optical coupler includes: a plurality of waveguide core layers formed from a waveguide core material having a first index of refraction, the waveguide core layers being (i) arranged in a stacked relationship one over another, (ii) spaced apart one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler toward a light output end of the optical coupler; and a cladding formed from a cladding material having a second index of refraction, the second index of refraction being less than the first index of refraction, the cladding material surrounding each of the plurality of waveguide core layers. Suitably, light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: An optical coupler includes: a plurality of waveguide core layers that are (i) stacked vertically one over another, (ii) spaced apart vertically one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler to a light output end of the optical coupler, wherein each of the plurality of waveguide core layers includes a plurality of distinct waveguide paths extending from the light receiving end of the optical coupler along a length of the optical coupler; and a cladding formed from a cladding material cladding material surrounding each of the plurality of waveguide core layers. Light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.

Abstract: The present disclosure provides a calibration system for wavelength-division multiplexing (WDM), a WDM system, and a calibrating method for WDM. The calibration system includes heating devices, an optical sensor, and an electrical device. When the optical sensor receives no beam with energy exceeding a threshold value from a first channel, the optical sensor transmits a first signal to the electrical device. In response to the first signal, the electrical device is configured to control the one or more of the heating devices to heat one or more of channels. When the optical sensor receives a beam having energy exceeding the threshold value from the first channel, the optical sensor transmits a second signal to the electrical device. In response to the second signal, the electrical device is configured to control the one or more of the heating devices to maintain the temperature of the one or more of the channels.

Abstract: A vertical grating coupler is disclosed. The grating coupler includes a first waveguide having a first grating, a second waveguide having a second grating, and a dielectric layer positioned between the first waveguide and the second waveguide. The first grating includes a plurality of first grating ridges separated by a plurality first grating gaps, and the second grating includes a plurality of second grating ridges separated by a plurality second grating gaps. The first grating, the second grating, and the dielectric layer are located in a vertical overlap region between the first waveguide and the second waveguide. The first grating and the second grating have different grating periods, and each of the plurality of first grating gaps and second grating gaps are filled with the dielectric layer.

Abstract: A photonic vertical grating filter is disclosed. The filter comprises a first waveguide, a second waveguide, and a plurality of Bragg gratings. The Bragg gratings are formed in a dielectric layer between the first waveguide and the second waveguide, and are located in a vertical overlap region between the first waveguide and the second waveguide. Each Bragg grating has a different grating period. The vertical filter uses less surface area and provides improved filtering capabilities.

Abstract: A photonic polarizing beamsplitter is disclosed. The beamsplitter comprises a first waveguide, a second waveguide located above the first waveguide, and a birefringent coupler between the first waveguide and the second waveguide. The birefringent coupler has an effective refractive index for a TM mode which is greater than a refractive index of the first waveguide, and an effective refractive index for a TE mode which is less than the refractive index of the first waveguide. The second waveguide comprises a plurality of outwardly tapering legs with a gap between adjacent legs that are connected downstream to a body. The vertical beamsplitter uses less surface area.