Patents by Inventor Tai-Chun Huang

Tai-Chun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240219627
    Abstract: An optical device is provided. The optical device includes a substrate, a first optical layer; a high k layer, and a second optical layer. The first optical layer is disposed on the substrate. The first optical layer comprises a top surface, a first sidewall, and a second sidewall opposite thereto. The high k layer is disposed on the top surface of the first optical layer. The second optical layer is disposed on the high k layer. The second optical layer includes a top surface, a third sidewall, and a fourth sidewall opposite thereto. The first sidewall of the first optical layer is misaligned with the third sidewall of the second optical layer. The second sidewall of the first optical layer is coplanar with the fourth sidewall of the second optical layer.
    Type: Application
    Filed: March 11, 2024
    Publication date: July 4, 2024
    Inventors: TAI-CHUN HUANG, STEFAN RUSU
  • Patent number: 12027423
    Abstract: A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. The isolation regions extend into a semiconductor substrate. A portion of the semiconductor fin is etched to form a trench, which extends lower than bottom surfaces of the isolation regions, and extends into the semiconductor substrate. The method further includes filling the trench with a first dielectric material to form a first fin isolation region, recessing the first fin isolation region to form a first recess, and filling the first recess with a second dielectric material. The first dielectric material and the second dielectric material in combination form a second fin isolation region.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: July 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Ting Ko, Tai-Chun Huang, Jr-Hung Li, Tze-Liang Lee, Chi On Chui
  • Patent number: 11984485
    Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.
    Type: Grant
    Filed: March 3, 2022
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Hsien Cheng, Jr-Hung Li, Tai-Chun Huang, Tze-Liang Lee, Chung-Ting Ko, Jr-Yu Chen, Wan-Chen Hsieh
  • Patent number: 11977249
    Abstract: An optical device is provided. The optical device includes a ring waveguide and a bus waveguide. The ring waveguide includes a coupling region. The bus waveguide is disposed adjacent to and spaced apart from the coupling region of the ring waveguide. The bus waveguide includes a coupling structure corresponding to the coupling region.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Cheng-Tse Tang, Chewn-Pu Jou, Lan-Chou Cho, Ming Yang Jung, Tai-Chun Huang
  • Publication number: 20240145249
    Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.
    Type: Application
    Filed: March 24, 2023
    Publication date: May 2, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Gang CHEN, Wan Chen HSIEH, Bo-Cyuan LU, Tai-Jung KUO, Kuo-Shuo HUANG, Chi-Yen TUNG, Tai-Chun HUANG
  • Patent number: 11971573
    Abstract: An optical coupler includes: a plurality of waveguide core layers formed from a waveguide core material having a first index of refraction, the waveguide core layers being (i) arranged in a stacked relationship one over another, (ii) spaced apart one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler toward a light output end of the optical coupler; and a cladding formed from a cladding material having a second index of refraction, the second index of refraction being less than the first index of refraction, the cladding material surrounding each of the plurality of waveguide core layers. Suitably, light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.
    Type: Grant
    Filed: June 6, 2022
    Date of Patent: April 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tai-Chun Huang, Stefan Rusu
  • Patent number: 11953719
    Abstract: An optical device is provided. The optical device includes a substrate, a first optical layer; a high k layer, and a second optical layer. The first optical layer is disposed on the substrate. The first optical layer comprises a top surface, a first sidewall, and a second side-wall opposite thereto. The high k layer is disposed on the top surface of the first optical layer. The second optical layer is disposed on the high k layer. The second optical layer includes a top surface, a third sidewall, and a fourth sidewall opposite thereto. The first sidewall of the first optical layer is misaligned with the third sidewall of the second optical layer. The second sidewall of the first optical layer is coplanar with the fourth sidewall of the second optical layer.
    Type: Grant
    Filed: May 19, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tai-Chun Huang, Stefan Rusu
  • Patent number: 11955370
    Abstract: A system and methods of forming a dielectric material within a trench are described herein. In an embodiment of the method, the method includes introducing a first precursor into a trench of a dielectric layer, such that portions of the first precursor react with the dielectric layer and attach on sidewalls of the trench. The method further includes partially etching portions of the first precursor on the sidewalls of the trench to expose upper portions of the sidewalls of the trench. The method further includes introducing a second precursor into the trench, such that portions of the second precursor react with the remaining portions of the first precursor to form the dielectric material at the bottom of the trench.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Bo-Cyuan Lu, Ting-Gang Chen, Sung-En Lin, Chunyao Wang, Yung-Cheng Lu, Chi On Chui, Tai-Chun Huang, Chieh-Ping Wang
  • Publication number: 20240061308
    Abstract: Optical devices and methods of fabricating thereof that include providing two different optical paths: a first optical path including a first waveguide core and a first cladding layer adjacent the first waveguide core; and a second optical path including a second waveguide core and a second cladding layer adjacent the second waveguide core. A thermo-optic coefficient (TOC) of the first waveguide core and a TOC of the first cladding layer have a same sign, for example positive, and a sign of a TOC of the second waveguide core is different than a sign of a TOC of the second cladding layer, for example, one positive and one negative. The paths may be in an Mach-Zehnder Interferometer (MZI).
    Type: Application
    Filed: February 8, 2023
    Publication date: February 22, 2024
    Inventors: Tzu-Hsiang YEN, Yung-Jr HUNG, Tai-Chun HUANG
  • Publication number: 20240053539
    Abstract: The present disclosure provides a calibration system for wavelength-division multiplexing (WDM), a WDM system, and a calibrating method for WDM. The calibration system includes heating devices, an optical sensor, and an electrical device. When the optical sensor receives no beam with energy exceeding a threshold value from a first channel, the optical sensor transmits a first signal to the electrical device. In response to the first signal, the electrical device is configured to control the one or more of the heating devices to heat one or more of channels. When the optical sensor receives a beam having energy exceeding the threshold value from the first channel, the optical sensor transmits a second signal to the electrical device. In response to the second signal, the electrical device is configured to control the one or more of the heating devices to maintain the temperature of the one or more of the channels.
    Type: Application
    Filed: October 22, 2023
    Publication date: February 15, 2024
    Inventors: TAI-CHUN HUANG, LAN-CHOU CHO, CHEWN-PU JOU, STEFAN RUSU
  • Publication number: 20240030281
    Abstract: A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.
    Type: Application
    Filed: July 21, 2022
    Publication date: January 25, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Szu-Hua Chen, Cheng-Ming Lin, Han-Yu Lin, Wei-Yen Woon, Ming-Jie Huang, Ting-Gang Chen, Tai-Chun Huang, Ming-Chang Wen, Szuya Liao
  • Publication number: 20240014077
    Abstract: A method includes forming a gate stack on a semiconductor region, etching the gate stack to form a first trench separating the gate stack into a first gate stack portion and a second gate stack portion, and forming a gate isolation region filling the first trench. The gate isolation region includes a silicon nitride liner, and a silicon oxide filling-region overlapping a first bottom portion of the silicon nitride liner. The method further includes etching the gate stack to form a second trench and to reveal a protruding semiconductor fin, and etching the protruding semiconductor fin to extend the second trench into the bulk semiconductor substrate. A fin isolation region is formed to fill the second trench. The fin isolation region includes a silicon oxide liner, and a silicon nitride filling-region overlapping a second bottom portion of the silicon oxide liner.
    Type: Application
    Filed: January 5, 2023
    Publication date: January 11, 2024
    Inventors: Bo-Cyuan Lu, Hsin-Che Chiang, Tai-Chun Huang, Chi On Chui
  • Patent number: 11862508
    Abstract: A semiconductor device a method of forming the same are provided. The semiconductor device includes a substrate, a first isolation structure and a second isolation structure over the substrate, a semiconductor fin over the substrate and between the first isolation structure and the second isolation structure, and a third isolation structure extending through the semiconductor fin and between the first isolation structure and the second isolation structure. A top surface of the semiconductor fin is above a top surface of the first isolation structure and a top surface of the second isolation structure. The third isolation structure includes a first dielectric material and a second dielectric material over the first dielectric material. An interface between the first dielectric material and the second dielectric material is below the top surface of the first isolation structure and the top surface of the second isolation structure.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Cyuan Lu, Tai-Chun Huang, Chih-Tang Peng, Chi On Chui
  • Patent number: 11855185
    Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Ju Chen, Chung-Ting Ko, Ya-Lan Chang, Ting-Gang Chen, Tai-Chun Huang, Chi On Chui
  • Publication number: 20230393333
    Abstract: An optical coupler includes: a plurality of waveguide core layers formed from a waveguide core material having a first index of refraction, the waveguide core layers being (i) arranged in a stacked relationship one over another, (ii) spaced apart one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler toward a light output end of the optical coupler; and a cladding formed from a cladding material having a second index of refraction, the second index of refraction being less than the first index of refraction, the cladding material surrounding each of the plurality of waveguide core layers. Suitably, light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.
    Type: Application
    Filed: June 6, 2022
    Publication date: December 7, 2023
    Inventors: Tai-Chun Huang, Stefan Rusu
  • Publication number: 20230393352
    Abstract: An optical coupler includes: a plurality of waveguide core layers that are (i) stacked vertically one over another, (ii) spaced apart vertically one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler to a light output end of the optical coupler, wherein each of the plurality of waveguide core layers includes a plurality of distinct waveguide paths extending from the light receiving end of the optical coupler along a length of the optical coupler; and a cladding formed from a cladding material cladding material surrounding each of the plurality of waveguide core layers. Light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.
    Type: Application
    Filed: June 6, 2022
    Publication date: December 7, 2023
    Inventors: Tai-Chun Huang, Stefan Rusu
  • Publication number: 20230395702
    Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.
    Type: Application
    Filed: August 2, 2023
    Publication date: December 7, 2023
    Inventors: Wen-Ju Chen, Chung-Ting Ko, Ya-Lan Chang, Ting-Gang Chen, Tai-Chun Huang, Chi On Chui
  • Patent number: 11835760
    Abstract: The present disclosure provides a calibration system for wavelength-division multiplexing (WDM), a WDM system, and a calibrating method for WDM. The calibration system includes heating devices, an optical sensor, and an electrical device. When the optical sensor receives no beam with energy exceeding a threshold value from a first channel, the optical sensor transmits a first signal to the electrical device. In response to the first signal, the electrical device is configured to control the one or more of the heating devices to heat one or more of channels. When the optical sensor receives a beam having energy exceeding the threshold value from the first channel, the optical sensor transmits a second signal to the electrical device. In response to the second signal, the electrical device is configured to control the one or more of the heating devices to maintain the temperature of the one or more of the channels.
    Type: Grant
    Filed: June 17, 2022
    Date of Patent: December 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tai-Chun Huang, Lan-Chou Cho, Chewn-Pu Jou, Stefan Rusu
  • Publication number: 20230386931
    Abstract: A method for forming a semiconductor device includes: forming a gate structure over a fin, where the fin protrudes above a substrate; forming an opening in the gate structure; forming a first dielectric layer along sidewalls and a bottom of the opening, where the first dielectric layer is non-conformal, where the first dielectric layer has a first thickness proximate to an upper surface of the gate structure distal from the substrate, and has a second thickness proximate to the bottom of the opening, where the first thickness is larger than the second thickness; and forming a second dielectric layer over the first dielectric layer to fill the opening, where the first dielectric layer is formed of a first dielectric material, and the second dielectric layer is formed of a second dielectric material different from the first dielectric material.
    Type: Application
    Filed: August 1, 2023
    Publication date: November 30, 2023
    Inventors: Chieh-Ping Wang, Ting-Gang Chen, Bo-Cyuan Lu, Tai-Chun Huang, Chi On Chui
  • Publication number: 20230384519
    Abstract: A photonic polarizing beamsplitter is disclosed. The beamsplitter comprises a first waveguide, a second waveguide located above the first waveguide, and a birefringent coupler between the first waveguide and the second waveguide. The birefringent coupler has an effective refractive index for a TM mode which is greater than a refractive index of the first waveguide, and an effective refractive index for a TE mode which is less than the refractive index of the first waveguide. The second waveguide comprises a plurality of outwardly tapering legs with a gap between adjacent legs that are connected downstream to a body. The vertical beamsplitter uses less surface area.
    Type: Application
    Filed: May 24, 2022
    Publication date: November 30, 2023
    Inventors: Tai-Chun Huang, Stefan Rusu