Patents by Inventor Tai-Yuan Wang
Tai-Yuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240150017Abstract: A hanging structure applicable to an unmanned aerial vehicle includes a hook-shaped body and at least one hook claw. The hook-shaped body has a bottom, at least one pivoting end, and an abutting portion. A hook opening is provided between the at least one pivoting end and the abutting portion and is opposite to the bottom. In addition, the at least one hook claw has a pivoting portion, and a first claw portion and a second claw portion that extend from the pivoting portion, respectively. The pivoting portion is pivoted to the at least one pivoting end. The second claw portion is heavier than the first claw portion. When the hanging structure is in a hanging state, a first end of the first claw portion abuts against the abutting portion, and the hook opening is closed. An unmanned aerial vehicle hanging system including the above hanging structure is further provided.Type: ApplicationFiled: November 3, 2023Publication date: May 9, 2024Inventors: TAI-YUAN WANG, I-TA YANG, YING-CHIEH CHEN
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Publication number: 20230395682Abstract: A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate. The fin structure includes alternately stacking first sacrificial layers and first channel layers. The method also includes forming source/drain features on opposite sidewalls of the fin structure, etching the fin structure to form gate recesses in the fin structure, removing the first sacrificial layers of the fin structure from the gate recesses, thereby forming first gaps exposing the first channel layers, and forming a gate stack in the gate recesses and the first gaps.Type: ApplicationFiled: June 6, 2022Publication date: December 7, 2023Inventor: Tai-Yuan WANG
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Patent number: 11754586Abstract: A wind speed detection system and a wind speed detection method are provided. The wind speed detection system includes a pipe body and a controller. The pipe body comprises a pressure sensing module and a suction pump. The pressure sensing module is connected to a first opening through a first pipe and connected to a second opening through a second pipe. The first pipe has a main pipe. Two ends of a first alternative pipe are connected to two ends of the main pipe. When the controller performs a self-checking operation, the main pipe is closed and the first alternative pipe is opened. The controller starts the suction pump to perform forward suction. The controller measures a first air pressure through the first pipe and measures a second air pressure through the second pipe by the pressure sensing module. The controller calculates a reference wind speed value according to the first and second air pressures.Type: GrantFiled: May 11, 2022Date of Patent: September 12, 2023Assignee: Coretronic Intelligent Robotics CorporationInventors: Ying-Chieh Chen, Tai-Yuan Wang, I-Ta Yang
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Publication number: 20220365108Abstract: A wind speed detection system and a wind speed detection method are provided. The wind speed detection system includes a pipe body, a pressure sensing module, a suction pump, and a controller. The pressure sensing module is connected to a first opening through a first pipe and connected to a second opening through a second pipe. The first pipe has a main pipe. Two ends of a first alternative pipe are connected to two ends of the main pipe. When the controller performs a self-checking operation, the main pipe is closed and the first alternative pipe is opened. The controller starts the suction pump to perform forward suction. The controller measures a first air pressure through the first pipe and measures a second air pressure through the second pipe by the pressure sensing module. The controller calculates a reference wind speed value according to the first and second air pressures.Type: ApplicationFiled: May 11, 2022Publication date: November 17, 2022Applicant: Coretronic Intelligent Robotics CorporationInventors: Ying-Chieh Chen, Tai-Yuan Wang, I-Ta Yang
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Patent number: 11478394Abstract: An exoskeleton wear management method is provided. The method includes receiving inertial data from a sensing system; determining whether a left leg component of an exoskeleton device is parallel to a left leg of a user and a right leg component of the exoskeleton device is parallel to a right leg of the user according to the received inertial data; in response to determining that the left leg component/the right leg component is not parallel to the left leg/the right leg of the user, prompting an adjusting left leg component message/an adjusting right leg component message; and in response to determining that the left leg component is parallel to the left leg of the user and the right leg component is parallel to the right leg of the user, prompting a left leg component and right leg component correctly-worn message.Type: GrantFiled: October 14, 2019Date of Patent: October 25, 2022Assignee: Wistron CorporationInventors: Tsung-Yin Tsou, Min-Yen Li, Tai-Yuan Wang, Hong-Siou Chen
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Publication number: 20220320279Abstract: A method of forming a semiconductor device includes forming a first semiconductor strip protruding above a first region of a substrate and a second semiconductor strip protruding above a second region of the substrate, forming an isolation region between the first semiconductor strip and the second semiconductor strip, forming a gate stack over and along sidewalls of the first semiconductor strip and the second semiconductor strip, etching a trench extending into the gate stack and isolation regions, the trench exposing the first region of the substrate and the second region of the substrate, forming a dielectric layer on sidewalls and a bottom surface of the trench and filling a conductive material over the dielectric layer and in the trench to form a contact, where the contact extends below a bottommost surface of the isolation region.Type: ApplicationFiled: June 20, 2022Publication date: October 6, 2022Inventors: Tai-Yuan Wang, Shu-Fang Chen
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Patent number: 11404577Abstract: A method includes forming a dielectric cap over a semiconductor substrate; forming a dummy gate structure over the dielectric cap; forming gate spacers on opposite sidewalls of the dummy gate structure and on a top surface of the dielectric cap; removing the dummy gate structure to form a gate trench between the gate spacers and exposing the dielectric cap; and performing an ion implantation to form a doped region in the semiconductor substrate through the dielectric cap.Type: GrantFiled: July 13, 2020Date of Patent: August 2, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Tai-Yuan Wang
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Patent number: 11374089Abstract: A method of forming a semiconductor device includes forming a first semiconductor strip protruding above a first region of a substrate and a second semiconductor strip protruding above a second region of the substrate, forming an isolation region between the first semiconductor strip and the second semiconductor strip, forming a gate stack over and along sidewalls of the first semiconductor strip and the second semiconductor strip, etching a trench extending into the gate stack and isolation regions, the trench exposing the first region of the substrate and the second region of the substrate, forming a dielectric layer on sidewalls and a bottom surface of the trench and filling a conductive material over the dielectric layer and in the trench to form a contact, where the contact extends below a bottommost surface of the isolation region.Type: GrantFiled: May 22, 2020Date of Patent: June 28, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tai-Yuan Wang, Shu-Fang Chen
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Publication number: 20220001994Abstract: A drone includes a drone main body and a parachute module. The parachute module includes a base, a housing, an inflatable material, a parachute, and an inflating device. The base is disposed on the drone main body. The housing covers the base to form a containing space therebetween. The inflatable material is disposed on the base and furled in the containing space. The parachute is connected to the inflatable material and the housing and is furled in the containing space. The inflating device is disposed on the base and connected to the inflatable material. When the inflating device inflates the inflatable material, the inflatable material expands and strikes the housing, so that the housing is separated from the drone main body, so as to increase a distance between the parachute and the drone main body and deploy the parachute. In addition, a control method of the drone is also provided.Type: ApplicationFiled: June 9, 2021Publication date: January 6, 2022Applicant: Coretronic Intelligent Robotics CorporationInventors: Ying-Chieh Chen, Tai-Yuan Wang, I-Ta Yang, Chun-Hsu Lai
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Publication number: 20210367033Abstract: A method of forming a semiconductor device includes forming a first semiconductor strip protruding above a first region of a substrate and a second semiconductor strip protruding above a second region of the substrate, forming an isolation region between the first semiconductor strip and the second semiconductor strip, forming a gate stack over and along sidewalls of the first semiconductor strip and the second semiconductor strip, etching a trench extending into the gate stack and isolation regions, the trench exposing the first region of the substrate and the second region of the substrate, forming a dielectric layer on sidewalls and a bottom surface of the trench and filling a conductive material over the dielectric layer and in the trench to form a contact, where the contact extends below a bottommost surface of the isolation region.Type: ApplicationFiled: May 22, 2020Publication date: November 25, 2021Inventors: Tai-Yuan Wang, Shu-Fang Chen
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Publication number: 20210022943Abstract: An exoskeleton wear management method is provided. The method includes receiving inertial data from a sensing system; determining whether a left leg component of an exoskeleton device is parallel to a left leg of a user and a right leg component of the exoskeleton device is parallel to a right leg of the user according to the received inertial data; in response to determining that the left leg component/the right leg component is not parallel to the left leg/the right leg of the user, prompting an adjusting left leg component message/an adjusting right leg component message; and in response to determining that the left leg component is parallel to the left leg of the user and the right leg component is parallel to the right leg of the user, prompting a left leg component and right leg component correctly-worn message.Type: ApplicationFiled: October 14, 2019Publication date: January 28, 2021Applicant: Wistron CorporationInventors: Tsung-Yin Tsou, Min-Yen Li, Tai-Yuan Wang, Hong-Siou Chen
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Publication number: 20200350436Abstract: A method includes forming a dielectric cap over a semiconductor substrate; forming a dummy gate structure over the dielectric cap; forming gate spacers on opposite sidewalls of the dummy gate structure and on a top surface of the dielectric cap; removing the dummy gate structure to form a gate trench between the gate spacers and exposing the dielectric cap; and performing an ion implantation to form a doped region in the semiconductor substrate through the dielectric cap.Type: ApplicationFiled: July 13, 2020Publication date: November 5, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Tai-Yuan WANG
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Patent number: 10714621Abstract: A semiconductor device includes a plurality of gate spacers, a gate conductor, and first and semiconductor features. The gate conductor is between the gate spacers. The first semiconductor feature underlies the gate conductor and has impurities therein. The second semiconductor feature underlies at least one of the gate spacers and substantially free from the impurities of the first semiconductor feature.Type: GrantFiled: December 14, 2016Date of Patent: July 14, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Tai-Yuan Wang
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Patent number: 10672867Abstract: A method includes forming a fin structure over a substrate; forming an isolation structure around the fin structure; etching the fin structure to form a recess in the fin structure; epitaxially growing a source drain structure in the recess; depositing a capping layer over a first portion of the source drain structure, in which the first portion of the source drain structure is over the isolation structure; recessing the isolation structure to expose a second portion of the source drain structure; and etching the second portion of the source drain structure, in which the first portion of the source drain structure remains over the isolation structure after etching the second portion of the source drain structure.Type: GrantFiled: November 12, 2018Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Tai-Yuan Wang
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Publication number: 20190096995Abstract: A method includes forming a fin structure over a substrate; forming an isolation structure around the fin structure; etching the fin structure to form a recess in the fin structure; epitaxially growing a source drain structure in the recess; depositing a capping layer over a first portion of the source drain structure, in which the first portion of the source drain structure is over the isolation structure; recessing the isolation structure to expose a second portion of the source drain structure; and etching the second portion of the source drain structure, in which the first portion of the source drain structure remains over the isolation structure after etching the second portion of the source drain structure.Type: ApplicationFiled: November 12, 2018Publication date: March 28, 2019Inventor: Tai-Yuan WANG
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Publication number: 20180350907Abstract: A semiconductor structure includes a semiconductor substrate, at least one source drain structure, an insulating layer, and a gate. The semiconductor substrate includes a base portion and at least one fin. The fin is disposed on the base portion. The source drain structure is disposed on at least one sidewall of the fin. The insulating layer is disposed between the base portion and the source drain structure to isolate the base portion and the source drain structure. The gate is disposed on the fin.Type: ApplicationFiled: May 31, 2017Publication date: December 6, 2018Inventor: Tai-Yuan WANG
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Patent number: 10147787Abstract: A semiconductor structure includes a semiconductor substrate, at least one source drain structure, an insulating layer, and a gate. The semiconductor substrate includes a base portion and at least one fin. The fin is disposed on the base portion. The source drain structure is disposed on at least one sidewall of the fin. The insulating layer is disposed between the base portion and the source drain structure to isolate the base portion and the source drain structure. The gate is disposed on the fin.Type: GrantFiled: May 31, 2017Date of Patent: December 4, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Tai-Yuan Wang
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Publication number: 20180166576Abstract: A semiconductor device includes a plurality of gate spacers, a gate conductor, and first and semiconductor features. The gate conductor is between the gate spacers. The first semiconductor feature underlies the gate conductor and has impurities therein. The second semiconductor feature underlies at least one of the gate spacers and substantially free from the impurities of the first semiconductor feature.Type: ApplicationFiled: December 14, 2016Publication date: June 14, 2018Inventor: Tai-Yuan Wang
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Patent number: 9923056Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.Type: GrantFiled: December 2, 2016Date of Patent: March 20, 2018Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chih-Hsiung Lin, Chia-Der Chang, Jung-Ting Chen, Tai-Yuan Wang
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Publication number: 20170084695Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.Type: ApplicationFiled: December 2, 2016Publication date: March 23, 2017Inventors: Chih-Hsiung Lin, Chia-Der Chang, Jung-Ting Chen, Tai-Yuan Wang