Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: Methods and structure for a semiconductor device is disclosed, which provides a semiconductor device that includes an integral semiconductor fin structure having a middle section defining a channel region of the semiconductor device. The middle section includes an embedded root portion protruding from an insulating surface on a substrate and a suspended overhead portion arranged above the root portion, which is separated from the overhead portion by a predetermined distance. The root portion and the overhead portion respectively define a substantially identical channel direction. The device further includes a gate structure disposed over the fin structure at the middle section. The gate structure wraps around a cross-section of the overhead portion and caps over the protruded portion of the root portion.

Abstract: Methods and structure for a semiconductor device is disclosed, which provides a semiconductor device that includes an integral semiconductor fin structure having a middle section defining a channel region of the semiconductor device. The middle section includes an embedded root portion protruding from an insulating surface on a substrate and a suspended overhead portion arranged above the root portion, which is separated from the overhead portion by a predetermined distance. The root portion and the overhead portion respectively define a substantially identical channel direction. The device further includes a gate structure disposed over the fin structure at the middle section. The gate structure wraps around a cross-section of the overhead portion and caps over the protruded portion of the root portion.

Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: A network browsing remote controller comprises a body, a plurality of selecting buttons and a rotary selecting unit. Some parts of the edge of the rotary selecting unit project over the edge of the inward concave section. Moreover, the selecting buttons are divided into several groups according to the similarity of function and are installed on the cambered surface of the housing of the body.

Abstract: A method and apparatus for interacting and selecting information on a video device employs a remote control unit which has a plurality of user interface devices. The user interface devices control information flow on the video device in a predetermined manner. The method and apparatus for interacting with information on the video device directly interacts with Hypertext Markup Language (HTML) tags without the need of a graphical mouse pointer on the video device.

Abstract: A host node is provided with an I/O port and a display monitor. The I/O port transmits packets to a specific one of the remotely accessible server nodes containing a request for information. In response, the I/O port receives packets containing requested information, entries describing other topics of information that can be provided from the specific server node and entries describing other server nodes. The display monitor has a view area on which images are displayed. The display monitor displays a hierarchically organized table. The table includes the entries describing remotely accessible server nodes and the entries describing topics of information that can be retrieved from the remotely accessible server nodes. The entries are hierarchically organized so as to indicate a hierarchical organization of the entries as provided for retrieval from the remotely accessible server nodes which hierarchical order of retrieval is independent of a specific order of retrieval by the host node.

Abstract: A foldable screen display for displaying screen images is disclosed which comprises: (a) at least two sub-displays; (b) a hinging member for pivotally connecting the sub-displays together on a side-by-side manner; (c) a magnifying optical element provided on top of each of the sub-displays, the magnifying optical element providing a magnifying power of between about 1.05 and about 1.3 so as to cause images displayed on the sub-displays to be perceived by a user as if they were from a single display; and (d) a membrane covering both of the sub-displays and the hinging member, the membrane being made of a transparent and resilient material. In a preferred embodiment, the magnifying optical element is a zone plate type magnifying optical element and is constructed to provide a magnifying power approximately equalling to one plus the ratio between the width of the hinging member and the width of sub-display.