Abstract: A semiconductor device includes semiconductor elements arranged in a first direction, an arm connection portion disposed between the semiconductor elements in the first direction, first and second power supply terminals disposed on the same side in the first direction, first and second substrates interposing the semiconductor elements therebetween, and a sealing body. The second substrate includes an insulating base member, a front-face metal body and a back-face metal body. The front-face metal body includes a second power supply wiring and a second relay wiring. The second power supply wiring includes a base portion on which the second element is arranged, and a pair of extending portions extending from the base portion in the first direction. The second relay wiring is disposed between the extending portions in a second direction, so that the second relay wiring and the base portion satisfy a relationship of L1<L2<L3.

Abstract: A semiconductor device includes: a semiconductor element having main electrodes on opposite faces in a plate thickness direction; a substrate having an insulating base member, a front-face metal body disposed on a front face of the insulating base member and electrically connected to one of the main electrodes of the semiconductor element, and a back-face metal body disposed on a back face of the insulating base member; a bonding member; and a metal member connected to the front-face metal body through the bonding member. The metal member has an opposing face opposing an upper face of the front-face metal body and a receiving portion disposed adjacent to the opposing face to provide a receiving space to receive the bonding member therein. The bonding member is received in the receiving space in a state where the opposing face is in contact with the upper face of the front-face metal body.

Abstract: In a semiconductor device, a plurality of semiconductor elements includes a first element and a second element arranged in a first direction perpendicular to a plate thickness direction. The first element and the second element each have a rectangular shape having four corner portions and four side portions. The first element and the second element have structures common to each other, in which pads are offset to a periphery of a first corner portion between a first side portion and a second side portion. The first element is disposed so that the first side portion faces signal terminals in a second direction, and the second side portion faces the second element in the first direction. The second element is disposed so that the second side portion faces the signal terminals in the second direction and the first side portion faces the first element in the first direction.

Abstract: A semiconductor device is to be arranged adjacent to a cooler in a predetermined direction. The semiconductor device includes a semiconductor element having main electrodes on opposite faces thereof, first and second substrates interposing the semiconductor element therebetween, and a conductive spacer interposed between the second substrate and the semiconductor element. Each of the first and second substrates includes an insulating base member, a front-face metal body connected to a corresponding main electrode, and a back-face metal body. A thickness of a part of the semiconductor device on the first substrate side from the semiconductor element is referred to as T1, and a thickness of a part of the semiconductor device on the second substrate side from the semiconductor element is referred to as T2. A relationship of T1?T2 is satisfied.

Abstract: A power card, which is to be aligned in a height direction with a cooling unit in which a refrigerant flows in an inner space extending in a lateral direction, includes a plurality of switches, a resin portion, and a plurality of external connection terminals. The switches are aligned in a vertical direction perpendicular to each of the lateral direction and the height direction. The resin portion covers each of the switches. The external connection terminals are electrically connected to the respective switches and each have a portion exposed from the resin portion.

Abstract: A semiconductor device includes a semiconductor element having a surface on which a first electrode and a second electrode are disposed, a conductor plate having a surface facing the surface of the semiconductor element and electrically connected to the first electrode, an insulating layer disposed on the surface of the conductor plate and covers a part of the surface of the conductor plate, and a conductor circuit pattern disposed on the insulating layer. The conductor circuit pattern has at least one conductor line electrically connected to the semiconductor element. The at least one conductor line includes a conductor line electrically connected to the second electrode.

Abstract: A semiconductor module disclosed herein may include: a first semiconductor element; an encapsulant that encapsulates the first semiconductor element; and a first stacked substrate on which the first semiconductor element is disposed, wherein the first stacked substrate may include a first insulator substrate, a first inner conductive layer and a first outer conductive layer, the first inner conductive layer being disposed on one side relative to the first insulator substrate, and the first outer conductive layer being disposed on another side relative to the first insulator substrate; the first inner conductive layer may be electrically connected to the first semiconductor element inside the encapsulant; and a part of the first inner conductive layer may be located outside the encapsulant and be configured to enable an external member to be bonded to the part.

Abstract: A semiconductor device disclosed herein may include: a semiconductor element including an electrode on a surface of the semiconductor element; and a terminal bonded to the electrode via a bonding material, wherein the electrode may include a protrusion portion that protrudes toward the terminal and is in contact with the bonding material.

Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.

Abstract: A semiconductor device may include: an upper conductive plate, a middle conductive plate, and a lower conductive plate that are stacked on each other; a first semiconductor chip located between the upper conductive plate and the middle conductive plate and electrically connected to both the upper conductive plate and the middle conductive plate; and a second semiconductor chip located between the middle conductive plate and the lower conductive plate and electrically connected to both the middle conductive plate and the lower conductive plate, wherein one of an area of the upper conductive plate and an are of the lower conductive plate may be smaller than an area of the middle conductive plate, and another of the area of the upper conductive plate and the area of the lower conductive plate may be larger than the area of the middle conductive plate.

Abstract: The semiconductor device includes a semiconductor module and a cooler. The semiconductor module includes an insulator substrate, an inner conductor film disposed on a first surface of the insulator substrate, a semiconductor element connected to the inner conductor film, a sealing body sealing the inner conductor film and the semiconductor element, and an outer conductor film disposed on a second surface of the insulator substrate and exposed from a surface of the sealing body. The cooler is disposed adjacent to the outer conductor film via a thermal interface material having fluidity. The outer conductor film has a protruding portion or a recessed portion on a surface being in contact with the thermal interface material.

Abstract: A semiconductor device includes a first semiconductor element, a first signal terminal group, and a second signal terminal group disposed at an interval from the first signal terminal group. The first semiconductor element includes a control signal electrode to which a control signal for the first semiconductor element is input, and a temperature signal electrode that outputs a signal corresponding to temperature of the first semiconductor element. The temperature signal electrode is connected with a temperature signal terminal included in the first signal terminal group, and the control signal electrode is connected with a first control signal terminal included in the second signal terminal group.

Abstract: A semiconductor device may include: an upper conductive plate, a middle conductive plate, and a lower conductive plate which are stacked on each other; a first semiconductor chip located between the upper and middle conductive plates and electrically connected to both the upper and middle; a second semiconductor chip located between the middle and lower conductive plates and electrically connected to both the middle and lower conductive plates; and an encapsulant encapsulating the first and second semiconductor chips and integrally holding the upper, middle and lower conductive plates. The middle conductive plate may include a main portion joined to the first and second semiconductor chips within the encapsulant and an exposed portion exposed outside on a surface of the encapsulant. A thickness of the exposed portion may be equal to or greater than a thickness of the main portion.

Abstract: A semiconductor device may be provided with: a semiconductor chip; an encapsulant encapsulating the semiconductor chip therein; and a conductor member joined to the semiconductor chip via a solder layer within the encapsulant. The conductor member may comprise a joint surface in contact with the solder layer and a side surface extending from a peripheral edge of the joint surface. The side surface may comprise an unroughened area and a roughened area that is greater in surface roughness than the unroughened area. The unroughened area may be located adjacent to the peripheral edge of the joint surface.

Abstract: A semiconductor device may include a substrate constituted of an insulator; a first conductor film provided on a part of the substrate; a semiconductor chip located on the first conductor film; and an external connection terminal joined to the substrate via a joining layer at a position separated from the first conductor film. The semiconductor chip may be a power semiconductor chip including a main electrode and a signal electrode. The main electrode may be electrically connected to the first conductor film and the signal electrode may be electrically connected to the external connection terminal.

Abstract: A semiconductor device may include a semiconductor substrate, an upper electrode provided on an upper surface of the semiconductor substrate, a lower electrode provided on a lower surface of the semiconductor substrate, and a terminal connected to the upper electrode. The semiconductor substrate may include an active region in which switching elements are provided. The switching elements may be configured to pass a current between the upper electrode and the lower electrode. The active region may include a main region located under the terminal and an external region located outside the main region. The external region may include a low current region. A current density in the low current region may be lower than a current density in the main region in a case where the switching elements in the low current region and the main region are turned on.

Abstract: A semiconductor device may include a first conductive plate, a plurality of semiconductor chips disposed on the first conductive plate, and a first external connection terminal connected to the first conductive plate. The plurality of semiconductor chips may include first, second, and third semiconductor chips. The second semiconductor chip may be located between the first semiconductor chip and the third semiconductor chip. A portion of the first conductive plate where the first external connection terminal is connected may be closest to the second semiconductor chip among the first, second, and third semiconductor chips. The first conductive plate may be provided with an aperture located between the portion of the first conductive plate where the first external connection terminal is connected and a portion of the first conductive plate where the second semiconductor chip is connected.

Abstract: Provided are an anticancer agent, radiosensitizer, and food composition capable of enhancing the effects of radiation therapy. The present inventors discovered that tumors shrink significantly in comparison to an untreated group and the respective monotherapy groups when treatment by burdock fruit extract containing arctigenin and radiation therapy were used in combination on mice transplanted with human pancreatic cancer cells. The anticancer agent of the present invention is an anticancer agent containing arctigenin and/or arctiin as the active ingredient, to be used in combination with radiation therapy. The arctigenin and/or arctiin may be contained as burdock, burdock fruit, burdock sprout, or forsythia, or an extract extracted from these.

Abstract: A semiconductor device includes: a first semiconductor element including a first signal electrode; a second semiconductor element, laminated on the first semiconductor element, including a second signal electrode; a sealing body; a first signal terminal connected to the first signal electrode; and a second signal terminal connected to the second signal electrode, wherein: the first signal terminal and the second signal terminal project from the sealing body and extend in a first direction; the first signal terminal and the second signal terminal are distanced from each other in a second direction; the first signal electrode and the second signal electrode are placed at different positions in the second direction; the first signal electrode is provided closer to the first signal terminal than to the second signal terminal; and the second signal electrode is provided closer to the second signal terminal than to the first signal terminal.

Abstract: A semiconductor device may include a first conductor plate on which a first semiconductor element, a second semiconductor element and a first circuit board are disposed, and a plurality of first signal terminals. A size of the second semiconductor is smaller than a size of the first semiconductor element. In a plan view along a direction perpendicular to the first conductor plate, the plurality of first signal terminals is located in a first direction with respect to the first semiconductor element. The second semiconductor element and the first circuit board are located between the plurality of first signal terminals and the first semiconductor element and are arranged along a second direction that is perpendicular to the first direction. A signal pad of the first semiconductor element is connected to a corresponding one of the plurality of first signal terminals via a signal transmission path of the first circuit board.