Abstract: A power module configured to arrange a first electrode on a surface of which a first switching device is bonded, a second electrode on a surface of which a second switching device is bonded, and a third electrode by stacking the first electrode, the first switching device, the second electrode, the second switching device, and the third electrode in this order from the bottom in a stacking direction, characterized by first through third electrode pieces each connected to the first through third electrodes, first and second signal lines each connected to the first and second switching devices, wherein the first through third electrode pieces and the first and second signal lines are provided extending outward in the same plane as the second electrode.

Abstract: A problem to be solved is to provide a lead frame and a power module having high material yield. A lead frame includes a plurality of first leads extending to one side of an area in which a semiconductor device is disposed in a planar view; a plurality of second leads extending to another side that is opposite the one side of the area in which the semiconductor device is disposed in a planar view; a third lead arranged outside of one of the plurality of first leads positioned at an edge of the plurality of first leads in a planar view; and a wiring part that is connected to the third lead, acts as a part of a guide frame of the plurality of first leads, the plurality of second leads, and the third lead, and acts as a wiring connected to the third lead after parts of the guide frame other than the part of the guide frame have been cut off.

Abstract: A semiconductor device includes a first semiconductor element; a first thick plate portion that is electrically connected to an electrode on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion that is electrically connected to an electrode on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion that is electrically connected to an electrode on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion that is electrically connected to an electrode on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the

Abstract: A power module according to the present invention includes a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; and a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device.

Abstract: A semiconductor module includes a semiconductor device; a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof; a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion, a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion; wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion.

Abstract: A semiconductor module which includes a semiconductor device; a wiring member that is connected to the semiconductor device; a cooling plate that includes a first surface on a side of the semiconductor device and a second surface on a side opposite to the first surface and has a fastening portion at an end thereof in a first direction; and a molded portion that is formed by molding a resin on the semiconductor device, the wiring member and the cooling plate, wherein the fastening portion is exposed out of the molded portion, and a terminal portion of the wiring member is exposed out of the molded portion such that the terminal portion of the wiring member extends in a second direction which is substantially perpendicular to the first direction.

Abstract: A power module is disclosed that includes a semiconductor element, a first cooling member and a second cooling member configured to sandwich the semiconductor element therebetween, a frame member configured to support the semiconductor element between the first cooling member and the second cooling member and molded resin disposed between the first cooling member and the second cooling member, wherein the frame member includes an adjusting member which adjusts a distance between the first cooling member and the second cooling member.

Abstract: A heat sink includes a flow path through which a cooling medium that cools a heat-producing body flows, the flow path having two flow path wall surfaces that face each other; and a plurality of columnar fins provided on one of the flow path wall surfaces, which is positioned at a side where the heat-producing body is provided, the plurality of columnar fins including a long columnar fin and a short columnar fin, and the other of the flow path wall surfaces having a recess in which a distal end portion of the long columnar fin is inserted.

Abstract: A silicone adhesive film comprising (A) a biaxially oriented aromatic polyester film, and (B) a crosslinked primer layer which is present on at least one surface of the aromatic polyester film and is formed of a crosslinked polymer of (a) alkoxysilane having a functional group selected from the group consisting of an epoxy group, vinyl group and mercaptoalkyl group and (b) alkoxysilane having an amino group; a production method thereof; and a release film.