Abstract: Pyridopyrimidine nucleotide derivatives expressed by formula (I), which are fluorescent and capable of forming base pairing with guanine or adenine, and oligo- or polynucleotide which have at least one of these derivatives in their molecules or at their molecular terminals: ##STR1## wherein X.sub.1 and X.sub.1 respectively represent ##STR2## (in which n indicates an integer of 0, 1, 2, or 3; however, in no case X.sub.1 and Y.sub.1 both indicate n=O); Z.sub.1 indicates a hydrogen atom or ##STR3## (in which n indicates an integer of 1, 2, or 3); W.sub.1 indicates a hydrogen atom or a hydroxyl group. As for R.sub.1 and R.sub.2, in case where R.sub.1 is an amino group or halogen, R.sub.2 indicates a single bond between the carbon atom at the 7-position and the nitrogen atom at the 8-position, and in case where R.sub.2 is a hydrogen atom or an lower alkyl group, R.sub.1 indicates a carbonyl bond ##STR4## formed with the carbon atom at the 7-position.

Abstract: Protein having a phospholipase A.sub.2 inhibitory activity which has the nature to be induced from cells upon administration of glucocorticoid and has a phospholipase A.sub.2 inhibitory activity.

Abstract: A plasma processing method and an apparatus for carrying out the method in which a processing gas is introduced into a processing chamber, and periodically an amplitude modulated or frequency-modulated high-frequency voltage is applied to plasma generating means, to generate a discharge plasma and to carry out predetermined processing by the plasma.

Abstract: The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

Abstract: The present invention consists in an etching method and apparatus wherein an optical image which is reflected from a region of a dicing stripe pattern on a substrate to-be-etched, such as a semiconductor wafer, is focused by a projecting optical system during selective etching. The focused pattern is converted into an image signal by an image detector, and a change of contrast in the region of the dicing stripe pattern is determined from the image signal. Based on this, an ending time for the etching can be decided from the change of contrast.