Abstract: An experience acquisition support apparatus that supports acquisition of an experience through a vehicle includes circuitry that sets a destination and a travel route of the vehicle to be suggested to a first user. While the vehicle is operating in a trip mode in which the destination and the travel route are set, the circuitry notifies a first mobile terminal of the first user of a second user and sends information on the second user to the first mobile terminal such that the first user can interact with the second user having a second mobile terminal that is in the trip mode within a specified range around the first mobile terminal. The circuitry generates a video file, which can be browsed by the second user and the like, from videos captured by cameras of the vehicle.

Abstract: A mobile communication system performs, in a first communication device configured to provide a service in response to a request from a mobile body (30), authentication based on identification information on the mobile body (30), and provides the service to the mobile body (30) based on a result of the authentication. When the mobile body (30) moves, the mobile communication system provides, in a second communication device (20) at the movement destination, the service to the mobile body (30) based on the identification information from the mobile body (30) and the authentication result obtained by the first communication device without performing authentication in the second communication device (20).

Abstract: According to one embodiment, a memory device includes: a third layer between first and a second layers above a substrate; a pillar being adjacent to the first to third layers and including a ferroelectric layer; a memory cell between the third layer and the pillar; and a circuit which executes a first operation for a programming, a second operation for an erasing using a first voltage, and a third operation of applying a second voltage between the third layer and the pillar. The first voltage has a first potential difference, the second voltage has a second potential difference smaller than the first potential difference. A potential of the third conductive layer is lower than a potential of the pillar in each of the first and second voltages. The third operation is executed between the first operation and the second operation.

Abstract: Provided is a synthetic graphite material, in which a size L (112) of a crystallite in a c-axis direction as calculated from a (112) diffraction line obtained by an X-ray wide angle diffraction method is in a range of 4 to 30 nm, a surface area based on a volume as calculated by a laser diffraction type particle size distribution measuring device is in a range of 0.22 to 1.70 m2/cm3, an oil absorption is in a range of 67 to 147 mL/100 g, and a nitrogen adsorption specific surface area is in a range of 3.1 to 8.2 m2/g.

Abstract: A semiconductor storage apparatus includes a memory cell array including a plurality of memory string structures each including a pair of memory string formation sections each formed by a channel formation film and a charge storage film and including a select gate transistor and a plurality of memory cell transistors connected in series and a partial conductive layer configured to electrically connect the memory string formation sections. During a reading operation of a memory cell transistor, at least one of the plurality of memory cell transistors and the select gate transistor belonging to the memory string formation section is turned off such that a channel of a memory cell transistor is fixed to a potential of a source line or a potential of bit lines.

Abstract: According to one embodiment, a memory device includes: a third layer between first and a second layers above a substrate; a pillar being adjacent to the first to third layers and including a ferroelectric layer; a memory cell between the third layer and the pillar; and a circuit which executes a first operation for a programming, a second operation for an erasing using a first voltage, and a third operation of applying a second voltage between the third layer and the pillar. The first voltage has a first potential difference, the second voltage has a second potential difference smaller than the first potential difference. A potential of the third conductive layer is lower than a potential of the pillar in each of the first and second voltages. The third operation is executed between the first operation and the second operation.

Abstract: A semiconductor memory device includes first conductive layers arranged in a first direction, second conductive layers arranged in the first direction, a first semiconductor layer disposed therebetween, a charge storage layer, a first wiring electrically connected to the first semiconductor layer, and first and second transistors connected to the first and the second conductive layers. In the semiconductor memory device, in an erase operation, a first voltage is supplied to at least a part of the first conductive layers, an erase voltage larger than the first voltage is supplied to the first wiring, and a first signal voltage is supplied to at least a part of the second transistors. The first signal voltage turns OFF the second transistor.

Abstract: A synthetic graphite material, in which a size L (112) of a crystallite in a c-axis direction as calculated from a (112) diffraction line obtained by an X-ray wide angle diffraction method is in a range of 4 to 30 nm, a surface area based on a volume as calculated by a laser diffraction type particle size distribution measuring device is in a range of 0.22 to 1.70 m2/cm3, an oil absorption is in a range of 67 to 147 mL/100 g, a spectrum derived from carbon appearing in an electron spin resonance method as measured using an X band is in a range of 3200 to 3410 gauss, and ?Hpp, which is a line width of the spectrum as calculated from a first derivative spectrum of the spectrum at a temperature of 4.8K, is in a range of 41 to 69 gauss.

Abstract: A vehicle control device executes a cruise control to let a vehicle travel in such a manner that an acceleration is equal to a predetermined acceleration, when an execution condition becomes satisfied, and starts a vehicle speed upper limit control to let the vehicle travel in such a manner that the vehicle speed does not exceed an upper limit value determined based on a shape of a curve section, when a start condition becomes satisfied. The vehicle control device starts displaying a display element in a first display mode, when the vehicle speed upper limit control is started. At a time point at which the vehicle speed upper limit control is ended, the vehicle control device starts displaying the display element in a second display mode different from the first display mode if the execution condition is not satisfied.

Abstract: A conventional V2X communication system relays vehicle information received from vehicles, from a base station to all vehicles in an area. Accordingly, a problem arises in that unnecessary transmission to vehicles which do not require vehicle information occurs, resulting in increase in a traffic amount in communication. According to the present disclosure, only if it is determined, based on information that is held by a vehicle or a base station and that is about an area in which direct transmission or reception is difficult, that direct transmission of vehicle information to another vehicle or reception of vehicle information transmitted from the other vehicle is difficult, the vehicle information is transmitted to the other vehicle via the base station.

Abstract: A device for setting a target vehicle that sets a target vehicle to be subjected to driving assistance control of a host vehicle includes: a detection signal acquisition device capable of acquiring a first detection signal representing an object by an image, and a second detection signal representing the object by a reflection point; and setting control unit, which determines whether to set a forward object as a target vehicle, wherein if a movement history is not associated with the forward object, and a combination history is associated with the forward object, then as a selection threshold of a first determination parameter for determining whether to set the forward object as the target vehicle, a selection threshold is used such that the forward object is less likely to be selected as the target vehicle than with the selection threshold which would be used if a movement history is associated with the forward object.

Abstract: A nonvolatile semiconductor storage device includes a first channel layer including a first drain-side select transistor, a first source-side select transistor, and a first memory cell transistor, a second channel layer including a second drain-side select transistor, a second source-side select transistor, and a second memory cell transistor, a word line that functions as a gate electrode of the first and second memory cell transistors, and a controller. When a read operation is executed on the first memory cell transistor, the controller turns on the second drain-side select transistor and the second source-side select transistor, supplies a first voltage to the word line in a state where the first drain-side select transistor and the first source-side select transistor are turned off, and then, supplies a second voltage to the word line in a state where the first drain-side select transistor and the first source-side select transistor are turned on.

Abstract: A memory system has a memory, a first substrate on which the memory is mounted and which is set to a temperature of ?40[° C.] or lower, a controller configured to control the memory; and a second substrate on which the controller is mounted, which is set to a temperature of ?40[° C.] or higher, and which transmits and receives a signal to and from the first substrate via a signal transmission cable.

Abstract: An angle-of-arrival identification device receives a reception signal including a plurality of subcarriers, using a plurality of antenna elements, and identifies an angle of arrival of the reception signal. The angle-of-arrival identification device includes signal processing units that extract predefined specific subcarriers (pilot carriers) from the reception signals received by each of the plurality of antenna elements, and an angle identification unit that identifies the angle of arrival on the basis of a phase difference between the specific subcarriers extracted by each of the signal processing units. The signal processing unit includes a frequency adjustment unit that adjusts a deviation, from a defined value, of a frequency of the reception signal received by the antenna element, and a filter unit that extracts the specific subcarrier by performing bandpass filter processing on the reception signal whose frequency has been adjusted.

Abstract: A reference identification unit identifies a target reference position to be a reference from a position history indicated in target information, based on a movement state of a target object, and identifies a nearby reference position to be a reference from a position history indicated in nearby information, based on a movement state, estimated from the nearby information, of a nearby object which is a mobile object present in the vicinity of the target object. A position estimation unit estimates a relative position between the target object and the nearby object, based on the target reference position and the nearby reference position.

Abstract: According to one embodiment, a semiconductor memory device includes: a first memory cell and a second memory cell capable of storing data and coupled in parallel to a bit line; a first word line coupled to the first memory cell; a second word line coupled to the second memory cell and being different from the first word line; and a control circuit. The first memory cell and the second memory cell share a first well region and are opposed to each other, with the first well region interposed. The control circuit is configured, in a first operation, to repeat application of a first voltage to the first word line and the second word line a plurality of times while increasing the first voltage.

Abstract: An ECU as an object detection device and a radar device are mounted on a vehicle. The radar device acquires front-view images containing a detection-target object such as a preceding vehicle present within a predetermined area around the vehicle. The radar device recognizes the detection-target object in time series based on the acquired front-view images. The ECU realizes a preceding vehicle selection part, an irregular-detection detecting part and an association processing part. The selection part selects the object when a relationship between the object and the vehicle satisfies a predetermined condition. The detecting part detects occurrence of an irregular detection when a first object selected as the preceding vehicle and a second object not selected as the preceding vehicle are detected based on the object. The association processing part performs an association process of associating history of the first object to the second object when the irregular detection has occurred.

Abstract: When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block.

Abstract: A semiconductor memory device includes a first chip and a second chip overlaid on the first chip. The second chip includes a memory cell array provided between a second semiconductor substrate and the first chip in a first direction, and first and second wires between the memory cell array and the first chip. The memory cell array includes three or more stacked bodies regularly arranged in a second direction perpendicular to the first direction and semiconductor layers extending in the stacked bodies in the first direction. Each of the stacked bodies includes gate electrodes stacked in the first direction. The first and second wires are aligned in the second direction with a gap therebetween.

Abstract: A vehicle recognition device includes: an acquisition section acquiring image information based on an image captured by a vehicle-mounted camera; a boundary line detection section detecting, based on the image information, boundary lines on both left and right sides demarcating vehicle traveling lanes; a vehicle detection section detecting position information on an object vehicle; and a recognition section recognizing lane-to-lane movement of the object vehicle between an own lane in which the subject vehicle is traveling and an adjacent lane. The recognition section recognizes the lane-to-lane movement based on a second boundary line of the boundary lines, a lane width between a first boundary line of the boundary lines and the second boundary line, and the position information on the object vehicle, the first boundary line dividing the own lane and the adjacent lane, the second boundary line being different from the first boundary line.