Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

Abstract: An image sensor includes a readout unit having a plurality of circuit blocks. At least a part of each of the plurality of circuit blocks is arranged in each of a plurality of regions electrically isolated from each other. When latchup has occurred in a circuit block of the plurality of circuit blocks, the voltage supply unit shuts off supply of a power supply voltage to the region in which the part is arranged, and then performs the supply of the power supply voltage to the region in which the part is arranged, and the voltage supply unit supplies the power supply voltage to the region in which the circuit block without latchup is arranged, while shutting off the supply of the power supply voltage to the region in which the part is arranged.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

Abstract: In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

Abstract: An image sensor includes a readout unit having a plurality of circuit blocks. At least a part of each of the plurality of circuit blocks is arranged in each of a plurality of regions electrically isolated from each other. When latchup has occurred in a circuit block of the plurality of circuit blocks, the voltage supply unit shuts off supply of a power supply voltage to the region in which the part is arranged, and then performs the supply of the power supply voltage to the region in which the part is arranged, and the voltage supply unit supplies the power supply voltage to the region in which the circuit block without latchup is arranged, while shutting off the supply of the power supply voltage to the region in which the part is arranged.

Abstract: A solid-state image sensor includes an image sensing unit in which a plurality of pixels are arrayed, a plurality of readout units configured to read out signals from the image sensing unit, a detector configured to detect an occurrence of a latch-up in each of the plurality of readout units, and a controller configured to control power supply to the plurality of readout units. The plurality of readout units are configured to read out signals from a same pixel in the image sensing unit. The controller is configured to shut off power supply to at least part of a readout unit in which the occurrence of the latch-up has been detected out of the plurality of readout units and thereafter supply power to the at least part.

Abstract: A light emitting apparatus includes: a pixel circuit formed over a substrate; a partition including a plurality of openings formed over the substrate with the pixel circuit; and a plurality of pixels defined by the plurality of the openings, wherein the pixel includes a light emitting element including a lower electrode connected to the pixel circuit and an organic compound layer formed over the lower electrode, the plurality of the pixels is arranged in a line in a longitudinal direction of the substrate, the pixel circuit includes: a transistor including a gate electrode and source/drain electrodes; a first interconnection including the gate electrode; and a second interconnection including the source/drain electrodes, and the second interconnection and an interconnection formed of a same layer as the second interconnection are separated from the organic compound layer in planar view from a direction perpendicular to a main surface of the substrate.

Abstract: The present invention provides a light-emitting device capable of effectively suppressing characteristic deterioration of an organic EL element caused by water. The light-emitting device includes a plurality of pixels arranged on a long substrate along a longitudinal direction of the substrate, each pixel including a light-emitting element including a lower electrode, an organic compound layer, and an upper electrode in a stated order from the substrate, a partition layer arranged between the lower electrode and the organic compound layer of the light-emitting element, having an opening which defines a light-emitting region of the light-emitting element, and made of an inorganic material, and a planarization layer arranged above the partition layer space from the organic compound layer, and made of a resin material.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

Abstract: A steam turbine direct contact condenser prevents cooling water sprayed from spray nozzles from reaching turbine blades of an axial-flow turbine, while introducing turbine exhaust gases exhausted by a steam turbine in the horizontal direction to cool such gases. The condenser includes an exhaust gas inlet part that introduces the turbine exhaust gases containing steam of the steam turbine and non-condensable gases in the horizontal direction, a steam cooling chamber that sprays cooling water to the introduced turbine exhaust gases to cool them, and a water storage disposed at the bottom of the steam cooling chamber that stores condensed water cooled from the steam and the cooling water. The steam cooling chamber includes a first cooling water spraying mechanism and a second cooling water spraying mechanism.

Abstract: A photographing device includes a display unit, a movement detection unit and a display control unit. The display unit displays a preview image of being a target to photograph. The movement detection unit detects the preview image being moving from status at which the preview has been photographed as a reference photographed image. The display control unit displays a reference line on the preview image. The reference line has been set in the reference photographed image. The display control unit changes a display position and a direction of the reference line in the display unit based on a detected result by the movement detection unit.

Abstract: In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

Abstract: In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

Abstract: A metal coordination compound represented by any one of formulas (1)-(5). An organic luminescence device including an anode, a cathode, and an organic layer, which contains the metal coordination compound, disposed between the anode and the cathode.

Abstract: A metal coordination compound represented by the formula: An organic luminescence device including an anode, a cathode, and an organic layer, which contains the metal coordination compound, disposed between the anode and the cathode.