Abstract: A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

Abstract: A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

Abstract: An aqueous ophthalmic solution containing hyaluronic acid or a salt thereof at a concentration from 0.03 to 0.5% (w/v) and propylene glycol at a concentration from 0.1 to 1.0% (w/v) comprises as a sole preservative, benzalkonium chloride at a concentration from 0.001 to 0.002% (w/v) and comprises an ionic tonicity agent at such a concentration that an osmotic pressure ratio of the ophthalmic solution becomes from 0.9 to 1.1.

Abstract: A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region.

Abstract: An agent for treatment of dry eye comprising a combination of a P2Y2 receptor agonist at a therapeutically effective concentration and hyaluronic acid or a salt thereof at a therapeutically effective concentration, which agent has a dosage form of an ophthalmic agent, can promote the secretion of tear remarkably and can improve corneal epithelial disorders remarkably, and is therefore expected to be a novel agent for treatment of dry eye.

Abstract: A control apparatus of a machine tool is adapted to detect whether or not an NC program is stopped at an end of a block and whether or not a rotation of a handwheel for a manual pulse generator is stopped and restarted when both a manual pulse mode and a single block mode are selected. The NC program is accordingly automatically restarted from the next block in conjunction with the restart of the handwheel rotation. The operator thus can restart an operation of an NC unit only by rotating the handwheel when the operation is automatically stopped at the end of a block of the NC program.

Abstract: Instillation of a 1.5% (w/v) levofloxacin ophthalmic solution three times a day, which is the dosage or dose regimen of the present invention, has features to cure bacterial conjunctivitis in a shorter time than instillation of a 0.5% (w/v) ophthalmic solution three times a day, which is the conventional dosage or dose regimen, and not to increase the rate of occurrence of side effects. Curing the ocular infection in a short time leads to shortening of the duration of exposure of the ocular-infection-causing bacterium to levofloxacin. Therefore, the levofloxacin ophthalmic solution in the dosage or dose regimen of the present invention is eventually expected to suppress emergence of the resistant bacterium resulting from the long-term use of the levofloxacin ophthalmic solution in the conventional dosage or dose regimen.

Abstract: The present invention provides a therapeutic agent and a prophylactic agent for a gastrointestinal disease. A peptide having an amino acid sequence represented by Ser-Ser-Ser-Arg or a pharmaceutically acceptable salt thereof promotes wound healing in a gastrointestinal mucosal tissue, and is therefore useful as a therapeutic agent or a prophylactic agent for a gastrointestinal disease. Further, when (a) a peptide having an amino acid sequence represented by Ser-Ser-Ser-Arg or a pharmaceutically acceptable salt thereof and (b) a peptide having an amino acid sequence represented by Phe-Gly-Leu-Met-NH2 or a pharmaceutically acceptable salt thereof are administered in combination, these medicaments act synergistically and can significantly promote wound healing in a gastrointestinal mucosal tissue.

Abstract: An eyedrop containing a peptide having an amino acid sequence represented by Ser-Ser-Ser-Arg (“SSSR”), or a pharmacologically acceptable salt thereof; and a peptide having an amino acid sequence represented by Phe-Gly-Leu-Met-NH2 (“FGLM”), or a pharmacologically acceptable salt thereof. The concentration ratio between SSSR or a pharmacologically acceptable salt thereof and FGLM or a pharmacologically acceptable salt thereof is between 1/15 and 1/50. The concentration of SSSR or a pharmacologically acceptable salt thereof is between 0.001% and 0.3% (w/v) and the concentration of FGLM or a pharmacologically acceptable salt thereof is between 0.015% and 1.5% (w/V). The pH of the eye drop is maintained between 2.5 and 6.5.

Abstract: A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

Abstract: A control apparatus of a machine tool is adapted to detect whether or not an NC program is stopped at an end of a block and whether or not a rotation of a handwheel for a manual pulse generator is stopped and restarted when both a manual pulse mode and a single block mode are selected. The NC program is accordingly automatically restarted from the next block in conjunction with the restart of the handwheel rotation. The operator thus can restart an operation of an NC unit only by rotating the handwheel when the operation is automatically stopped at the end of a block of the NC program.

Abstract: A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region.

Abstract: A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

Abstract: The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etching back the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

Abstract: The present invention relates to proteins which have a role in controlling neuronal cell migration and cell death as well as to the DNA which encode those proteins. It is an object of the present invention to provide control of cell migration and/or cell death by providing a method for screening for promoters or inhibitors of proteins which affect the control of cell migration and/or cell death of neurons by interacting with an actin-binding protein, Filamin 1, through promoting the degradation of Filamin 1 or the DNA encoding Filamin 1. The cDNAs of S-FILIP, L-FILIP and h-FILIP cDNAs, which interact with Filamin 1, thereby negatively affecting cell migration and cell death by promoting the degradation of the Filamin 1, were isolated and the full nucleotide and amino acid sequences thereof were determined.

Abstract: The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

Abstract: The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

Abstract: The present invention relates to proteins which have a role in controlling neuronal cell migration and cell death as well as to the DNA which encode those proteins. It is an object of the present invention to provide control of cell migration and/or cell death by providing a method for screening for promoters or inhibitors of proteins which affect the control of cell migration and/or cell death of neurons by interacting with an actin-binding protein, Filamin 1, through promoting the degradation of Filamin 1 or the DNA encoding Filamin 1. The cDNAs of S-FILIP, L-FILIP and h-FILIP cDNAs, which interact with Filamin 1, thereby negatively affecting cell migration and cell death by promoting the degradation of Filamin 1, were isolated and the full nucleotide and amino acid sequences thereof were determined.

Abstract: In an apparatus for recording a broadcast program on an optical disk, a broadcast reception section receives a broadcast signal containing various programs broadcasted from a broadcast station. A recording setup section specifies a program to be recorded on an optical disk among the various programs contained in the received broadcast signal. An information acquisition section acquires attribute information associative of content of the specified program from an electronic program guide of various programs.