Abstract: An apparatus for measuring a light absorpiton characteristic of a thin film is provided.The apparatus comprises (1) a liquid container containing a liquid on which surface a thin film is to be spread, (2) exciting light source for supplying an exciting light to be projected from below the liquid surface on to a measurement site of the thin film spread on the liquid surface, at such an incident angle that the exciting light reflects totally at the liquid surface, (3) a chopper for converting the exciting light into an intermittent exciting light before the exciting light reaches the measurement site of the thin film, (4) a probe light source for supplying probe light passing the measurement site or its vicinity, and (5) a detector for detecting an amount of deflection of the probe light having passed the measurement site or its vicinity.

Abstract: A light beam fluctuation compensating device is provided which comprises a light source, a first optical system for splitting a light beam emitted from said light source into two light beams and a second optical system for irradiating the two light beams split by said first optical system onto a target. A light beam fluctuation method utilizing the device is also provided.

Abstract: A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

Abstract: A device for measuring optical properties is provided which is equipped with an exciting light source for emitting exciting light to the sites to be measured of a sample, a light intensity modulator for modulating the exciting light, a probe light source for emitting probe light and a detector for receiving the probe light. The device is characterized by comprising an intensity distribution modifying means for bringing the maximum intensity portion of said probe light close to the sample when the probe light emitted from the probe light source reaches the site to be measured or the vicinity thereof. A method for measuring optical properties using the device is also provided. This device is useful particularly for measurement of the light absorption characteristics of a monomolecular film spread on a liquid surface.

Abstract: An optical recording method comprises the steps of:(A) irradiating a radiation corresponding to a recording information on an optical recording medium having a recording layer containing a diacetylene derivative and at least one selected from the group (hereinafter called the group B) consisting of azulenium salt compounds, pyrylium dyes, diene compounds, croconic methine dyes and polymethine compounds, thereby forming a latent image; and(B) irradiating a radiation on the recording medium having said latent image formed thereon to thereby visualizing said latent image.

Abstract: A display method comprises applying electrical energy to a display layer formed of a monomolecular film or a monomolecular-layer built-up film of a clathrate complex compound composed of a host molecule having a hydrophilic portion, a hydrophobic portion and a portion to enclose a guest molecule, and a guest molecule on a substrate, thereby making a display.The display may be made by color-forming or light emitting due to reduction of the guest molecules.

Abstract: A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.

Abstract: A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge.

Abstract: A film forming method, a recording medium formed thereby, and a recording method therewith are provided. The recording medium comprises a recording layer constituted of a monomolecular film or monomolecular-layer built-up film of a clathrate complex compound comprised of a host molecule and a guest molecule, said host molecule having a hydrophilic portion, a hydrophobic portion, and a portion capable of enclosing said guest molecule.

Abstract: A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.

Abstract: Liquid droplets are formed by instantaneous state change by thermal energy of a liquid filled in a thermal chamber, said droplets being deposited onto a recording member to achieve recording.

Abstract: A liquid jet recording process comprises the step of providing a continuous passageway defining a path through which liquid can flow. The passageway has an inlet thereto and an outlet orifice therefrom and further defines a thermal chamber portion located directly in the path intermediate the inlet and the outlet orifice and spaced upstream from the outlet orifice. Liquid is supplied to the passageway to fill it and an input signal is generated each time it is desired to produce a liquid droplet. The liquid in the thermal chamber portion is heated in response to each input signal and heating is sufficient instantaneously to cause a change of state of the liquid in the thermal portion chamber sufficient to produce a force acting on liquid filling the passageway between the thermal chamber portion and the orifice that overcomes the surface tension of liquid at the orifice and thereby projects a droplet of liquid from the orifice.

Abstract: A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.

Abstract: A photometric apparatus includes a light source, apparatus for oscillating a light beam spot across a sample, apparatus for measuring secondary light from the sample, and apparatus for determining the specific portion of the sample to be examined by photometry. With this photometric apparatus, each of a plurality of microscopic areas of the sample can be evaluated accurately.

Abstract: A semi-conductor device comprising a lamination of a photoconductive layer, a charge-retaining layer and a display layer, provided between electroconductive films, and an electronic apparatus utilizing said semi-conductor device are provided.

Abstract: A film forming method, a recording medium formed thereby, and a recording method therewith are provided. The recording medium comprises a recording layer constituted of a monomolecular film or monomolecular-layer built-up film of a clathrate complex compound comprised of a host molecule and a guest molecule, said host molecule having a hydrophilic portion, a hydrophobic portion, and a portion capable of enclosing said guest molecule.

Abstract: An optical coupler of good efficiency can be prepared at a low cost by making an optical waveguide and a grating of the optical coupler of a monomolecular layer or a monomolecular built-up film.

Abstract: A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate.A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.

Abstract: A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.

Abstract: A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: ##STR1## wherein l represents 3, 4 or 5; and R represents H or SiH.sub.3 ; ##STR2## wherein R.sup.1 and R.sup.2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11;R.sup.1 --(Si.multidot.R.sup.2 R.sup.3).sub.p --R.sup.4 (c)wherein R.sup.1 and R.sup.4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R.sup.2 and R.sup.3 independently represent H or CH.sub.3 ; and p represents an integer of 3 to 7.