Abstract: A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of;(A) straight chain silicon hydrides represented by the general formulaSi.sub.n H.sub.2n+2wherein n is an integer 4 or more;(B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formulaSi.sub.m H.sub.2mwherein m is 3, 4, 5, or 6; and(C) branched chain silicon hydrides represented by the general formulaSi.sub.p H.sub.qwherein p is an integer of 4 or more and q is an interger of 10 or more;in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.

Abstract: A light scattering measuring apparatus utilizes light scattering to analyze physical properties of the surface and interior of an object, and particularly converts the scattered light therefrom into molecular vibrational energy or heat energy and measures the same. The light scattering measuring apparatus is provided with light applying means for applying an intermittent light to an object to be examined, a medium for absorbing scattered light intermittently emitted from the surface of the object by the applied light in accordance with the physical properties of the object to be examined and converting the scatterd light into molecular vibrational energy or heat energy, a detecting device for detecting the information regarding the energy produced by the medium, and a measuring device for measuring the molecular vibrational energy or the heat energy on the basis of a signal produced by the detecting device.

Abstract: A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.

Abstract: A process for forming a deposition film, wherein a gaseous atmosphere of a silicon compound selected from(i) a silicon compound having at least one azo group directly bonded to a silicon atom and(ii) a silicon compound having at least one azide group directly bonded to a silicon atomis formed in a deposition chamber in which a substrate is placed, said compound is excited and decomposed utilizing light energy, and a deposition film containing silicon atoms is formed on said substrate.A compound containing atoms of a group III element or a group V element of the Periodic Table may be included in the atmosphere in the deposition chamber, the compounds excited and decomposed utilizing light energy, and a deposition film containing silicon atoms and the atoms in the group III or V element of the Periodic Table formed on said substrate.

Abstract: A photo-electric converter principally constructed with a photo-electric conversion unit wherein m.times.n photo-electric conversion elements, each having a light receiving window to form a pel and constructed with a layer of light receiving body and two electrodes provided on both sides thereof, are arranged two-dimensionally in an array of m ranks and n files, and wherein the light receiving windows of the photo-electric conversion elements constituting a rank are arranged at an equally spaced pitch of an integral multiple of that of pels. A signal processing circuit processes and produces as an output a signal which has been subjected to the photo-electric conversion in the photo-electric conversion unit.

Abstract: A method for orienting a liquid crystal comprises bringing a liquid crystal into contact with a heat treated surface of an electrode substrate provided with a film formed by coating a silane compound having alkoxy and an organic residue having at least a fluorine-substituted hydrocarbon residue, the heat treatment being effected under vacuum or under the conditions that the heating temperature and the treating time are within the region of a triangle having the vertexes at (1.75, 0), (2.5, 0) and (1.75, 3.7) in a coordinate with 1000 x (x being the reciprocal of absolute temperature) on the abscissa and ln k' on the ordinate where k' is the ratio of 300 min. to the treating time (min.).Liquid crystal display devices utilize the electrode substrate thus treated.

Abstract: A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge.

Abstract: A method for forming images comprises applying voltage or electric charge to one or more electrodes selected from an electrode group comprising electrodes each of which has a transistor and attaching a toner to the selected electrodes. A device for forming images comprises an electrode group and a toner supplying device, each of electrodes of the electrode group being provided with a transistor.

Abstract: The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.A) and a peak at 970.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.B) in the infrared spectrum, the ratio I.sub.A /I.sub.B, being not more than 1.0.

Abstract: A photoelectric conversion type information processing device constructed with a photoelectric conversion section including a plurality of photoelectric conversion elements arranged in an array or in a matrix form, a common electrode for the photoelectric conversion elements, independent electrodes for each of the photoelectric conversion elements, and a photoelectric conversion layer interposed between the common electrode and the independent electrode; and a time-sequential signal conversion section for introducing thereinto in parallel, in response to a light signal input, a plurality of signal outputs from the photoelectric conversion elements and rendering the signal as introduced to be a time-sequential output.

Abstract: This invention provides a photo electro transducer device having a photo electro transducer unit in which plural photo electro transducer elements having light receiving faces are arranged in an array, and a crosstalk preventing unit composed of diode elements respectively connected electrically to these photo electro transducer elements.

Abstract: A photoelectric transducing element with a high polymer substrate, being characterized in that the element comprises a conductor layer formed on a flexible high polymer insulation film substrate and comprising at least one pair of independent conductor patterns and a photoelectric transducing layer superposed on the patterned portion of the conductor layer and consisting of a thin film of amorphous photoconductive material formed by means of a thin film forming means.

Abstract: A support member comprising a polymer material and a transparent and electrically conductive metal oxide semi-conductor layer on the polymer material. Alternatively, the support member comprises a polymer material, and a transparent and electrically conductive metal oxide semi-conductor layer and a metal fluoride layer on the polymer material. The support member can be used as a support for a photographic member.