Abstract: A conductor layer 2 is formed as a circuit pattern on a base insulating layer 1, a terminal 3 is formed thereon, and a supporting column 4 is formed in the vicinity of the terminal on the upper face of the base insulating layer 1. Here, supposing the protrusion height B of the bump from the element to be connected is B, the height of the supporting column is H, the height of the terminal is h, and the layer thickness of the terminal is t, as measured from the upper face of the base insulating layer as the reference surface, the height H of the supporting column is determined to satisfy B<H<h+B wherein t<B, or h<H<h+B wherein t?B. As a result, the supporting column functions as a spacer to suppress compression that causes the solder of the terminal to reach the electrode of the element.

Abstract: The present invention aims to provide a method of manufacturing a semiconductor device that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer, while also suppressing an increase in the number of steps in the manufacturing process. This object is achieved by a method of manufacturing a semiconductor device including the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together.

Abstract: Provided are an encapsulating resin sheet having improved a connection reliability by improving a connection failure, and by suppressing intrusion of an inorganic filler between terminals of the semiconductor element and the interconnection circuit substrate, a semiconductor device using the same, and a fabricating method for the semiconductor device. The encapsulating resin sheet is an epoxy resin composition sheet having a two-layer structure of an inorganic filler containing layer and an inorganic filler non-containing layer, in which a melt viscosity of the inorganic filler containing layer is 1.0×102 to 2.0×104 Pa·s, a melt viscosity of the inorganic filler non-containing layer is 1.0×103 to 2.0×105 Pa·s, a viscosity difference between both layers is 1.5×104 Pa·s or more; and a thickness of the inorganic filler non-containing layer is ? to ? of a height of the connecting electrode portion formed in the semiconductor element.

Abstract: The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×102 Pa·S or more and 2×104 Pa·S or less, and the shear modulus of the adhesive layer is 1×103 Pa or more and 2×106 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.

Abstract: There is provided a polycarbonate resin composition containing aluminum oxide nanoparticles and being capable of showing good moldability and retention heat stability and combining high transparency and dimensional stability with excellent mechanical properties. The polycarbonate resin composition is characterized by containing an organic acid and aluminum oxide and in that: the resin composition has a melt mass flow rate of 11 g/10 min or higher as measured according to JIS K 7210 under the conditions of a temperature of 280° C., a nominal load of 2.16 Kg and a nozzle dimension L/D of 8/2; and a No. 2 dumbbell-shaped specimen according to JIS K 7113 formed by heat-press molding the resin composition into a film of 0.2 mm in thickness and cutting the film has a breaking stress of 8 MPa or higher as measured under the conditions of a temperature of 23° C., a humidity of 50% RH and a tensile rate of 50 mm/min.

Abstract: A fluorine-containing cyclic olefin polymer composition of the present invention includes a fluorine-containing cyclic olefin polymer (A) containing a repeating structural unit represented by the general formula (1) and having a fluorine atom content rate of 40 to 75% by mass; a photocurable compound (B); and a photocuring initiator (C).

Abstract: A wiring circuit layer 2 having at least a wiring part and an insulating part, whose top and bottom surfaces (20A, 20B) is adhesive surfaces, is formed on a metal support substrate 1 in a way such that the layer 2 can be peeled from the substrate 1. Exposed in the first adhesive surface 20A of the wiring circuit layer 2 is a first connecting conductor part 21, which is connectable with an electrode 31 of a first semiconductor element 3 in a wafer state. After the wiring circuit layer 2 is laminated on and connected to the element 3, the metal support substrate 1 is peeled from the wiring circuit layer 2 to yield a semiconductor device 4. Another element may be connected to the other adhesive surface 20B exposed upon the peeling.

Abstract: An electronic component includes a functional element, first and second collectors joined to the functional element, and an outer package integrally covering the functional element and the first and second collectors. The functional element has first and second end surfaces having circular shapes and a side surface having a cylindrical shape extending along a center axis. The element includes first and second electrode foils rolled about the center axis and exposed from the first and second surfaces, respectively. The outer package has first and second surfaces parallel to the first and second end surfaces of the functional element, and has first to fourth corners as seen from a direction of the center axis. The first corner is adjacent to the second corner. The first and second terminals are arranged at the first and second corners of the outer package, respectively. This electronic component can have a small size and a small height while reducing its equivalent series resistance.

Abstract: A wiring circuit layer 2 having a connecting conductor part 21 that can be connected to an electrode 31 of a semiconductor element 3 is formed on a metal support substrate 1 in a way such that the wiring circuit layer can be separated from the substrate 1, and that the connecting conductor part 21 is exposed on the upper face of the wiring circuit layer. The wiring circuit layer 2 is laminated on the element 3 while in a wafer state, and the connecting conductor part 21 and the electrode 31 are connected. Subsequently, the support substrate 1 is peeled from the wiring circuit layer 2, and the wafer is diced, whereby individual semiconductor devices are obtained.

Abstract: The present invention provides a titanium material for hot rolling that enables reduction of defects occurring on the surface (in the case of a flat material or strip coil, including not only the flat surfaces but also the side surfaces and edges) owing to the hot rolling, and a method of producing the same, particularly to a titanium material for hot rolling enabling omission of an ingot breakdown process, and a method of producing the same, characterized in that it is a titanium material for hot rolling having dimples imparted by cold plastic deformation whose mean value of the heights (Wc) of the undulation profile elements is 0.2 to 1.5 mm and mean value of the lengths (WSm) thereof is 3 to 15 mm, and makes it possible to minimize surface defects occurring in hot rolling even if a process for breaking down the ingot is omitted.

Abstract: An apparatus and method allows the width of high-melting temperature reactive metallic slabs produced in an electron beam melting furnace to be easily changed. The apparatus for production of the metallic slabs by the electron beam melting has a metal melting part and a metal extraction part mutually separated by an air tight valve; a metal melting part has a melting chamber, electron gun, hearth, a mold of variable wall distance, and an air tight valve; and the metal extraction part has a slab chamber, an extraction base, an extracting shaft, and an drive unit for extracting the metal slab. The method for production of the metallic slab using this apparatus has a step of pulling a previous metallic slab produced in the rectangular mold out of the rectangular mold, a step of moving the short mold wall(s) of the rectangular mold to change the width of the rectangular mold, and a step of producing a subsequent metallic slab.

Abstract: The present invention provides a titanium slab for hot rolling which can be fed into a general purpose hot-rolling mill for producing strip coil, without passage through a breakdown process such as blooming or a straightening process, and can further suppress surface defect occurrence of the hot-rolled strip coil, and a method of producing and a method of rolling the same, characterized in that in the cast titanium slab an angle ? formed by the crystal growth direction (solidification direction) from the surface layer toward the interior and a direction parallel to the slab casting direction (longitudinal direction) is 45 to 90°, and moreover, there is a surface layer structure of 10 mm or greater whose ? is 70 to 90°, and further characterized in that a crystal grain layer of 10 mm or greater is formed whose C-axis direction inclination of a titanium a phase is, as viewed from the side of the slab to be hot rolled, in the range of 35 to 90° from the normal direction of the surface to be hot rolled.

Abstract: A titanium slab is appropriate for hot rolling, is produced by electron beam melting furnace, has superior linearity so that it can be fed into a hot rolling machine without performing breaking down process or other subsequent correcting process after production, and has good structure having no cracks at the corner parts. A process for production thereof is also provided. The titanium slab is directly produced by a mold of an electron beam melting furnace, and has the deformation of not more than 5 mm for the thickness direction versus the longitudinal direction and deformation of not more than 2.5 mm for the width direction versus the longitudinal direction, both per a length of 1000 mm of the slab. The process for production of this titanium slab for hot rolling has a step of using an electron beam melting furnace in which its rectangular mold has mold walls of a long side and mold walls of a short side, and a step of pouring molten metal from one of the mold walls of a short side.

Abstract: Provided is an imprint product, which is for transcribing a fine pattern of a mold surface and which contains a fluorine-containing cyclic olefin polymer containing repeating unit represented by formula (1) and having a fluorine atom content rate of 40% to 75% by mass.

Abstract: A resin composition which provides a molded article capable of effectively blocking off heat rays from sunlight and having excellent transparency, color and moist heat resistance and a molded article thereof. The resin composition comprises (A) 100 parts by weight of a polycarbonate resin (component A), (B) 0.0001 to 0.05 part by weight of coated hexaboride particles, each composed of a hexaboride particle of at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sr and Ca and a coating layer (component B), and (C) 0.0001 to 0.05 part by weight of nitride particles (component C).

Abstract: There is provided an acrylic adhesive composition which comprises: (A) a vinyl polymer comprising a homopolymer or a copolymer of an alkyl (meth)acrylate having a C4 to C14 alkyl group; (B) an organophilic layered double hydroxide organically treated with an organic anion; and (C) a crosslinking agent. Therefore the obtained adhesive composition has sufficient adhesiveness to an object, excellent heat resistance and excellent adhesive properties particularly at higher temperatures, and is substantially free from variations in adhesiveness.

Abstract: Provided is a method of producing a semiconductor device having a structure wherein a semiconductor chip 3 is mounted on a wiring circuit substrate 2 and sealed with a resin. A wiring circuit substrate 2 having a connecting conductor portion that can be connected to an electrode of the chip is formed on a metal support layer 1 in a way such that the substrate can be separated from the metal support layer, the chip 3 is mounted on the wiring circuit substrate 2, a sheet-shaped resin composition T is placed on the chip and heated on the chip to seal the chip, and the metal support layer is separated and divided to obtain individual semiconductor devices.

Abstract: A conductor layer 2 is formed as a circuit pattern on a base insulating layer 1, a terminal 3 is formed thereon, and a supporting column 4 is formed in the vicinity of the terminal on the upper face of the base insulating layer 1. Here, supposing the protrusion height B of the bump from the element to be connected is B, the height of the supporting column is H, the height of the terminal is h, and the layer thickness of the to terminal is t, as measured from the upper face of the base insulating layer as the reference surface, the height H of the supporting column is determined to satisfy B<H<h+B wherein t<B, or h<H<h+B wherein t?B. As a result, the supporting column functions as a spacer to suppress compression that causes the solder of the terminal to reach the electrode of the element.

Abstract: A wired circuit board having improved adhesion between the conductive pattern and an insulating layer to prevent a plating solution from remaining between a metal plating layer and the insulating layer. The invention prevents ionic impurities in the plating solution from remaining as residual or ionic contamination, thereby preventing a short circuit from developing when electric current flows through the circuit under a high temperature and high humidity environment. Lower end portions of the terminal portions that are formed on an insulating base layer and lower end portions of side surfaces and metal plating layers that cover the terminal portions are embedded in the insulating base layer in a flexible wired circuit board.

Abstract: An alumina particle (1) of the present invention has an alumina body with a short axis length (b) of 1 to 10 nm, a long axis length (a) of 20 to 400 nm and an aspect ratio (a/b) of 5 to 80. The alumina body is expressed by a Formula I, and n is not less than 0. Al2O3.