Abstract: A performance in a technique using a heater for manufacturing a resin molding product is further improved. A method of manufacturing a resin molding product includes: a step of placing a first portion configuring a resin molding product, in a first mold; a step of placing a second portion configuring a resin molding product, in a second mold; a step of inserting a heater between the first mold and the second mold; a step of partially heating the first portion and the second portion by the heater; a step of evacuating the heater; a step of welding the first portion and the second portion; and a step of extracting the resin molding product including the first portion and the second portion.

Abstract: A plasma processing apparatus or a plasma processing method having an improved yield, the plasma processing apparatus includes: a processing chamber arranged inside a vacuum container; a processing gas supply line connecting to the vacuum container, communicating with the processing chamber, and configured to supply processing gas having adhesiveness to the processing chamber; and a gas exhaust line for the processing gas connecting and communicating the processing gas supply line with a processing chamber exhaust line that is connected to an exhaust pump and communicates with the processing chamber, in which the plasma processing apparatus exhausts the processing gas in the processing gas supply line through the gas exhaust line and the processing chamber exhaust line in a state where supplying of the processing gas to the processing chamber is stopped between one processing step of etching the wafer and a subsequent processing step.

Abstract: There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower mem

Abstract: A vacuum processing apparatus with excellent processing uniformity and capable of effectively performing routine and non-routine maintenance even when an object to be processed has an increased diameter is provided. In the vacuum processing apparatus having a vacuum transfer chamber, this apparatus comprises a lower vessel having a cylindrical shape, a sample stage unit including a sample stage and a ring-shaped sample stage base having support beams disposed axisymmetric with respect to a central axis of the sample stage, an upper vessel having a cylindrical shape, and a moving mechanism which is fixed to the sample stage base and is capable to move the sample stage unit movable in a vertical direction and in a horizontal direction.

Abstract: A melting heater configured to melt joining end surfaces of a pair of semi-molded products in a case where the joining end surfaces are melted and joined to manufacture a molded product, the melting heater including: two glass plates arranged in parallel to each other; and a plurality of element heaters arranged in a unit having a flat plate shape as a whole between the two glass plates, in which the glass plate is subjected to surface processing for controlling infrared rays emitted from the plurality of element heaters.

Abstract: The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.

Abstract: A plasma processing apparatus or a plasma processing method having an improved yield, the plasma processing apparatus includes: a processing chamber arranged inside a vacuum container; a processing gas supply line connecting to the vacuum container, communicating with the processing chamber, and configured to supply processing gas having adhesiveness to the processing chamber; and a gas exhaust line for the processing gas connecting and communicating the processing gas supply line with a processing chamber exhaust line that is connected to an exhaust pump and communicates with the processing chamber, in which the plasma processing apparatus exhausts the processing gas in the processing gas supply line through the gas exhaust line and the processing chamber exhaust line in a state where supplying of the processing gas to the processing chamber is stopped between one processing step of etching the wafer and a subsequent processing step.

Abstract: Disclosed is a plastic cap useful for steadfastly maintaining a sealed state created in a container having a mouth with an opening by sealing the opening with a sealing member. The cap has a cap main body and a cover portion integrated with the main body via at least one bridge portion. The main body has a base portion and a top wall. The bridge portion is formed of a synthetic plastic filled in at least one fusion-bonding hole having a diameter of from 0.3 to 3 mm and arranged extending through at least one, preferably one of the main body or cover portion such that the main body and cover portion are integrally fusion-bonded by the bridge portion and the cover portion can be separated from the main body by breaking the bridge portion with hands. A production method of the plastic cap is also disclosed.

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing.

Abstract: A plasma processing apparatus has a vacuum container having a processing chamber in which a wafer is processed by plasma and at least one member constituting the vacuum container movable and detachable in a horizontal direction with respect to a base plate. The plasma processing apparatus includes a lifter arranged at a side of the vacuum container across the vacuum container on the base plate, coupled to an end portion on the opposite side of a vacuum transfer chamber on which the wafer is transferred in a decompressed interior, and having a vertical shaft to move the detachable member vertically. The lifter includes: a coupling portion coupled to the vertical shaft and the detachable member and moved along the vertical shaft; and a turning shaft being a joint portion arranged at the coupling portion and having a vertical rotational shaft, the detachable member being horizontally turned around the turning shaft.

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing.

Abstract: The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.

Abstract: There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower mem

Abstract: Disclosed is a gas storage container for an inflator, the container being formed by cold forging a steel material having a predetermined steel composition. The steel composition by mass percent of the steel material includes, C: 0.10% to 0.31%, Si: 0.13% to 0.39%, Mn: 0.49% to 1.05%, P: 0.03% or less, S: 0.03% or less, Ni: 0.28% or less, Cr: 0.76% to 1.38%, Mo: 0.13% to 0.33%, and a remainder of Fe and unavoidable impurities.

Abstract: A plasma processing apparatus has a vacuum container having a processing chamber in which a wafer is processed by plasma and at least one member constituting the vacuum container movable and detachable in a horizontal direction with respect to a base plate. The plasma processing apparatus includes a lifter arranged at a side of the vacuum container across the vacuum container on the base plate, coupled to an end portion on the opposite side of a vacuum transfer chamber on which the wafer is transferred in a decompressed interior, and having a vertical shaft to move the detachable member vertically. The lifter includes: a coupling portion coupled to the vertical shaft and the detachable member and moved along the vertical shaft; and a turning shaft being a joint portion arranged at the coupling portion and having a vertical rotational shaft, the detachable member being horizontally turned around the turning shaft.

Abstract: Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher. The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.