Patents by Inventor Takehiko Fujita
Takehiko Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7938080Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: GrantFiled: December 9, 2008Date of Patent: May 10, 2011Assignee: Tokyo Electron LimitedInventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Patent number: 7906168Abstract: An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.Type: GrantFiled: September 25, 2007Date of Patent: March 15, 2011Assignee: Tokyo Electron LimitedInventors: Kazuhide Hasebe, Yoshihiro Ishida, Takehiko Fujita, Jun Ogawa, Shigeru Nakajima
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Publication number: 20100319619Abstract: In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.Type: ApplicationFiled: August 9, 2010Publication date: December 23, 2010Applicant: Tokyo Electron LimitedInventors: Takehiko FUJITA, Jun Ogawa, Shigeru Nakajima, Kazuhide Hasebe
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Patent number: 7795158Abstract: In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.Type: GrantFiled: August 28, 2007Date of Patent: September 14, 2010Assignee: Tokyo Electron LimitedInventors: Takehiko Fujita, Jun Ogawa, Shigeru Nakajima, Kazuhide Hasebe
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Publication number: 20100055829Abstract: Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material.Type: ApplicationFiled: August 31, 2009Publication date: March 4, 2010Inventors: Dong-Hyun Im, Byoungjae Bae, Dohyung Kim, Sunglae Cho, Jinil Lee, Juhyung Seo, Hyeyoung Park, Takehiko Fujita
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Patent number: 7648895Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.Type: GrantFiled: December 22, 2008Date of Patent: January 19, 2010Assignee: Tokyo Electron LimitedInventors: Masaki Kurokawa, Katsuhiko Komori, Norifumi Kimura, Kazuhide Hasebe, Takehiko Fujita, Akitake Tamura, Yoshikazu Furusawa
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Publication number: 20090104760Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.Type: ApplicationFiled: December 22, 2008Publication date: April 23, 2009Applicant: TOKYO ELECTON LIMITEDInventors: Masaki KUROKAWA, Katsuhiko Komori, Norifumi Kimura, Kazuhide Hasebe, Takehiko Fujita, Akitake Tamura, Yoshikazu Furusawa
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Publication number: 20090090300Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: ApplicationFiled: December 9, 2008Publication date: April 9, 2009Inventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Patent number: 7494943Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: GrantFiled: October 6, 2006Date of Patent: February 24, 2009Assignee: Tokyo Electron LimitedInventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Publication number: 20080107824Abstract: An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.Type: ApplicationFiled: September 5, 2007Publication date: May 8, 2008Inventors: Kazuhide Hasebe, Yoshihiro Ishida, Takehiko Fujita, Jun Ogawa, Shigeru Nakajima
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Publication number: 20080095678Abstract: An oxidation apparatus for a semiconductor process includes a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field of a process container through a gas supply port disposed adjacent to target substrates on one side of the process field. The gas supply port includes a plurality of gas spouting holes arrayed over a length corresponding to the process field in a vertical direction. A heater is disposed around the process container and configured to heat the process field. A control section is preset to perform control such that the oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field, and an oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.Type: ApplicationFiled: October 18, 2007Publication date: April 24, 2008Inventors: Kazuhide Hasebe, Takehiko Fujita, Shigeru Nakajima, Jun Ogawa
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Publication number: 20080081104Abstract: An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.Type: ApplicationFiled: September 25, 2007Publication date: April 3, 2008Inventors: Kazuhide Hasebe, Yoshihiro Ishida, Takehiko Fujita, Jun Ogawa, Shigeru Nakajima
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Publication number: 20080057199Abstract: In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.Type: ApplicationFiled: August 28, 2007Publication date: March 6, 2008Inventors: Takehiko Fujita, Jun Ogawa, Shigeru Nakajima, Kazuhide Hasebe
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Patent number: 7273818Abstract: In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.Type: GrantFiled: October 18, 2004Date of Patent: September 25, 2007Assignee: Tokyo Electron LimitedInventors: Masaki Kurokawa, Norifumi Kimura, Takehiko Fujita, Yoshikazu Furusawa, Katsuhiko Komori, Kazuhide Hasebe
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Publication number: 20070131537Abstract: A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.Type: ApplicationFiled: January 24, 2007Publication date: June 14, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: KOICHI SAKAMOTO, Yamato Tonegawa, Takehiko Fujita
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Patent number: 7211514Abstract: A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.Type: GrantFiled: August 25, 2004Date of Patent: May 1, 2007Assignee: Tokyo Electron LimitedInventors: Takehiko Fujita, Akitake Tamura, Keisuke Suzuki, Kazuhide Hasebe, Mitsuhiro Okada
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Publication number: 20070093075Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: ApplicationFiled: October 6, 2006Publication date: April 26, 2007Inventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Patent number: 7179334Abstract: A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.Type: GrantFiled: March 19, 2002Date of Patent: February 20, 2007Assignee: Tokyo Electron LimitedInventors: Koichi Sakamoto, Yamato Tonegawa, Takehiko Fujita
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Publication number: 20060099805Abstract: A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data.Type: ApplicationFiled: October 29, 2003Publication date: May 11, 2006Inventors: Takehiko Fujita, Mitsuhiro Okada, Kota Umezawa, Kazuhide Hasebe, Koichi Sakamoto
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Publication number: 20060021570Abstract: A hemispherical grained (HSG) film is oxidized to form an oxidized layer at the surface part of the HSG film, and then the oxidized layer is etched to be removed. The size of the hemispherical grains after etching is smaller than that as formed.Type: ApplicationFiled: July 29, 2005Publication date: February 2, 2006Inventors: Kazuhide Hasebe, Norifumi Kimura, Takehiko Fujita, Yoshikazu Furusawa