Abstract: A document processing system for processing documents by using structured keywords comprises an output system and a receiver system. The output system includes a first storage for storing a structured keyword dictionary containing structured keywords among which relations are systematically structured, and linkage unit providing linkage information for establishing correspondences between constituent parts of an input document and corresponding ones of the keywords. The receiver system is coupled to the output system and includes a second storage for storing structured keywords among which relations are systematically structured, and retrieving unit having inputs supplied with the document and the linkage information for retrieving the document to thereby form data of a predetermined edition format by using the structured keyword read out from the second storage. Data transfer between the output system and the receiver systems can be performed either on-line or off-line.

Abstract: In a first embodiment of a CAM (Content Addressable Memory) or cache memory of the present invention disclosed herein, comparing information stored in a memory cell with comparison input information is accomplished in a comparison circuit without first converting a readout current from the memory cell into voltage information. In another embodiment, a matching detection between first stored information outputted from a first memory cell array and second stored information outputted from a second memory cell array is accomplished by an integrally formed sensing and matching detection circuit which is characterized as having both sensing and matching detection capabilities. That is, the sensing and matching detection circuit senses both stored information and thereafter detects matching based on a sensing result.

Abstract: A semiconductor integrated circuit device is provided which include a plurality of cell columns each having a number of unit cells previously fabricated on a semiconductor substrate selected from the plural kinds of unit cells which are formed in desired circuits by electrically connecting circuit devices previously arranged. Each column includes at least one kind of unit cell of a dynamic circuit which has a node in a floating state during the operation of the cell unit. A fixed potential shield layer is also provided on the cell columns so as to cover the nodes of the dynamic circuits. By virtue of this, a wiring area for electrically connecting the desired cell units can be located between the cell columns and above the shield layer. In other words, signal wirings in the wiring area can pass over the nodes of the dynamic circuits. without adverse parasitic effects. The unit cell can also be provided with a precharge circuit comprising a standard cell and an in-cell wiring layer.

Abstract: An information processing system includes a plurality of functional blocks (neurons) and a data bus for transmitting in common the outputs of the individual functional blocks (neurons). Data transaction among the functional blocks (neurons) is performed through the data bus on the time-division basis. For preventing the outputs from conflicting or competition, addresses are assigned to the individual blocks (neurons), respectively, so that only the functional blocks (neuron) having the own address designated by the address signal supplied through an address bus outputs data signal onto the data bus, while the other functional blocks (neurons) receive the information on the data bus as the signal originating in the functional block whose address is designated at that time point. The addresses are sequentially changed. During a round of the address signals, data are transmitted from given functional blocks (neurons) to other given functional blocks (neurons).

Abstract: A field effect transistor formed on a semi-insulator or compound semiconductor substrate comprises a first semiconductor layer forming a source region, a drain region and a channel layer, and a second semiconductor layer having a reverse conduction type to that of the first semiconductor layer. The second semiconductor layer is doped so that it will be totally depleted. Therefore, a portion of the second semiconductor layer adjacent to the substrate will remain conductive. The field effect transistor with this structure prevents the short channel effect and the soft error due to .alpha.-particles. A threshold voltage control arrangement is also provided using the feature of a control electrode coupled to the second semiconductor layer and a feedback arrangement.

Abstract: A computer system having a plurality of processors assigned first and second address portions are connected to a plurality of switch circuits. A first group transfer networks are connected to a corresponding first group of the plurality of switch circuits. Each of the transfer networks concurrently transfer data among the switch circuits. The switch circuits are provided to processors of a first kind arranged in a plurality of processor groups. The processor groups of the first kind include processors with different values for first address portions and the same value for second address portions. Additional transfer networks, processors and switches functioning in a similar manner are provided to expand the above system. In another embodiment of the present invention a data transfer network is provided having a plurality of processors for data transfer.

Abstract: This invention discloses a clock distribution system which distributes a first clock signal as a reference clock as the reference for the phase and frequency to each processing unit (e.g. LSI) and generates a multi-phase second clock signal to be used in each processing unit by a delay circuit group whose delay time is adjusted.

Abstract: A dynamic semiconductor logic circuit comprising a MOS FET logic section for effecting a high-speed logic operation in response to input logic signals after precharging of an output mode and internal nodes the logic section, a CMOS/BiCMOS output buffer section for outputting a result of the logic operation, and a noise suppression section for preventing erroneous operations without sacrificing the high-speed operation characteristic. The circuit, which is fabricated with 0.5-.mu.m-rule technology and operates at high speed with a low-voltage power source of 4.5 V or less, has a precharging section for precharging the output node and internal nodes of the MOS FET logic section and a noise suppression section for latching the output node of the logic section to the source potential by feeding back the output of an output buffer section in order to enlarge the soft error margin. The latching current is held at less than a predetermined ratio to maintain the high-speed operation characteristic.

Abstract: A semiconductor integrated circuit device is provided which includes a logic circuit utilizing an error detection code.

Abstract: An output signal of a logic portion is inputted to the gate of FET inside an output buffer portion to inverse the signal polarity by this FET and is outputted through a bipolar transistor effecting an emitter follower operation or the like. An FET controlled by a clock signal is disposed between the base of the bipolar transistor and the ground and an FET which is turned ON during a pre-charge operation and when the bipolar transistor is OFF during logic calculation is disposed between the emitter and the ground so as to short-circuit the emitter and the ground during the pre-charge operation. In this manner, higher operation speed, higher integration density and high operation margin can be accomplished without losing the characteristic features of a Bi-CMOS dynamic logic circuit in its high operation speed and low power dissipation.

Abstract: In a data transfer network of the present invention, each switch is designed such that when the partial address necessary for a given switch to determine another switch belonging to the succeeding stage, to which a packet is to be delivered from the given switch, is included in the first one of plural subpackets supplied to the given switch and each having the partial address, the given switch starts its switching operation upon arrival of the first subpacket. In a preferred embodiment, when the partial address necessary for the succeeding switch to make its switching operation is not included in the first subpacket, the partial addresses are exchanged between the subpackets by the preceding switch so that the said partial address is now included in the first subpacket.

Abstract: An output interface circuit comprises a CMOS circuit including a pair of complementary MOS transistors and receiving an input signal at the gates of the paired MOS transistors, a bipolar transistor having its base connected to the output of the CMOS circuit and its emitter from which an output signal is delivered, and a control circuit connected between the paired MOS transistors and operable, upon the fall of the output signal, to cut off a current flowing through any one of the paired MOS transistors so as to control the low level at the output of the CMOS circuit such that the low level does not fall before a potential level by which the low level of the output signal is permitted to be at a desirable predetermined potential level. Specifically, the CMOS circuit includes a pair of complementary MOS transistors comprised of a P-type MOS transistor and an N-type MOS transistor and receives an input signal of CMOS level to operate in inverter fashion.

Abstract: Disclosed is a semiconductor integrated circuit device forming MESFETs by use of a semi-insulator GaAs substrate which prevents destruction of an electrostatic destruction protect circuit and a Schottky junction of an internal circuit by causing a part of electrostatic energy, which is applied to external terminals, to flow from a semiconductor region connected to the external terminals into another semiconductor region which is formed in the vicinity of the semiconductor region described above and to which a predetermined fixed potential is applied.

Abstract: An input buffer for a semiconductor circuit is provided with a source follower circuit composed of a first FET whose gate electrode has an input connected thereto, and a second FET of the same conductivity type as that of the first FET, whose drain electrode is connected to a source electrode of the first FET directly or through at least one level-shifting diode and whose gate electrode is supplied with a control voltage. The input buffer also includes a FET inverter circuit connected to the drain electrode of the second FET directly or through at least one level-shifting diode. An output signal for the input buffer is derived from the FET inverter circuit. A particular advantage of the present invention is that it permits the input buffer to switch its output from one level to another in response to input signals falling within a predetermined voltage range regardless of logic threshold level fluctuations in the FETs and fluctuations in supply voltages coupled to the input buffer.