Abstract: A method of manufacturing a semiconductor device through use of an organic polymeric material, the material having a superior embedding characteristic which enables uniform embedding without regard to density of hole patterns and realizing a high etch rate, an embedding material for use with the method and a semiconductor device. An organic polymeric material can be embedded into the hole patterns to a uniform height regardless of their density, by means of coating the material several times. Further, there is formed the organic polymeric material film 30 which is to be used for embedding hole patterns and from which a pigment component is eliminated so that the etch rate of the organic polymeric film 30 is increased. By means of applying the organic anti-reflective material film 32 over the organic polymeric material film 30, a film of uniform height can be formed through multiple stages. The interconnection trenches which do not require consideration for embedding hole patterns are formed first.

Abstract: There is described a method of producing a pure resist pattern having superior topography smaller than the limit of wavelength of exposure light. A first resist pattern containing material capable of producing an acid on exposure to light is coated with a second resist containing material which causes a crosslinking reaction in the presence of an acid. An acid is produced in the resist pattern by exposing the pattern to light, thus forming a crosslinked layer along the boundary surface between the first resist pattern and the second resist. As a result, a second resist pattern which is greater than the first resist pattern is formed. Minute pure resist patterns are produced through two-step processing: that is, by removing the second resist from the substrate through use of a liquid prepared by dissolving an organic solvent into water and by rinsing the substrate with water. The diameter of holes formed in the resist or the interval between isolated patterns can be reduced.

Abstract: There is described a method of stably manufacturing a fine resist pattern narrower than the wavelength of exposing light from a stepper. Under the method, a resist pattern is formed on a semiconductor substrate through use of an acid catalyst chemically-amplified photoresist, and an organic film which includes an acid or which produces an acid on exposure to light is formed on the surface of the semiconductor substrate including the resist pattern. The organic film is then subjected to a heat treatment to thereby diffuse an acid. The surface layer of the resist pattern is made soluble in an alkaline developer, and the surface layer of the resist pattern is removed through use of the alkaline developer. As a result, a fine resist pattern is formed.

Abstract: An improved method of forming a resist pattern permitting control of a resist profile of a chemically amplified-type resist is provided. A chemically amplified-type resist is exposed to light using a mask. The resist is then baked by PEB at a first temperature, and developed halfway. The resist is baked again at a second temperature lower than the first temperature, and then fully developed. A resist pattern is thus obtained.

Abstract: A method of manufacturing a semiconductor device copes with miniaturization owing to reduction in an overlapping margin. According to this manufacturing method, a conductive layer forming an upper interconnection layer is formed in an opening provided for connection to a lower interconnection layer, and then an organic polymer film filling a concavity at the conductive layer located in the opening is formed. After forming a resist pattern on the organic polymer film, organic polymer film and conductive layer are etched. The overlapping margin is reduced owing to the fact the organic polymer film fills the concavity at the conductive layer.

Abstract: A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.

Abstract: A forming method of a fine resist pattern improve so as to form a fine pattern of high accuracy can be obtained. A positive-type photoresist 1 including naphthoquinone diazide and novolak resin is applied on a substrate. An anti-reflection film adjusted to alkalinity is applied on positive-type photoresist 1. Positive-type photoresist 1 on which anti-reflection film 9 is applied is selectively irradiated. Positive-type photoresist 1 is developed.

Abstract: In a method of forming a pattern of a multilayer type semiconductor device according to the present invention, reference marks are formed in advance by positioning of a stage on a semiconductor wafer 300, positions of those reference marks are compared with positions of first alignment marks for measuring an error of a first exposure apparatus. After correcting the error, a second layer is formed with a second exposure apparatus, and positions of the reference marks are compared with positions of second alignment marks provided on the second layer for measuring an error of the second exposure apparatus. In other words, there is provided the method of forming patterns of the multilayer type semiconductor device allowing measurement of an error due to a lens distortion readily included in each layer by forming reference marks in advance on the semiconductor wafer for measuring the lens distortion included in each layer.

Abstract: A pharmaceutical composition capable of being disintegrated in an acidic environment, which comprises calcium polycarbophil and 1 to 80% by weight of a cellulose derivative such as carboxymethylcellulose or low substituted hydroxypropylcellulose based on the calcium polycarbophil. The pharmaceutical composition in a form of a tablet, a capsule, or granules is useful as a bulk-forming laxative or an antidiarrheic agent since it can be disintegrated readily in the stomach and form a complete dispersion of polycarbophil in the digestive tract.