Abstract: Polymerizable combinations, comprising at least one first component selected from the group of benzoxazine monomers and at least one second component selected from the group of aromatic esters are described. Further on the use of aromatic esters as additives to benzoxazine monomers as well as methods of coating a device by heating the above mentioned combination, and a device, coated by that way is explained.

Abstract: A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench via a gate insulation film; a source electrode on the source region; and a drain electrode on a second side of the substrate. The source region has multi-layered structure including a first layer and a second layer. The first layer as an upper layer contacts the source electrode with ohmic contact. The second layer as a lower layer has an impurity concentration, which is lower than an impurity concentration of the first layer.

Abstract: A SiC semiconductor device having a MOS structure includes: a SiC substrate; a channel region providing a current path; first and second impurity regions on upstream and downstream sides of the current path, respectively; and a gate on the channel region through the gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 4.7×1020 cm?3. The interface provides a channel surface having a (000-1)-orientation surface.

Abstract: Provided is a monodisperse polymer of chloromethylstyrene as a bifunctional compound. Chloromethylstyrene is purified to a purity of at least 99% and polymerized preferably using a RAFT reagent.

Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

Abstract: Provided is an information processing apparatus including: a power supply control portion that performs control of a power supply; a detection signal emitting portion that, when a connection of an external power source is detected in an operation stand-by state in which power consumption is suppressed and an operation is on stand-by, emits a detection signal only for a certain time period, in accordance with the detection; and a power supply portion that supplies power to the power supply control portion based on the detection signal emitted by the detection signal emitting portion and also stops the power supply to the power supply control portion after a certain time period elapses from the connection in the operation stand-by state.

Abstract: The light directed from a light source to a concave mirror and the light directed from a display device to an eyepiece optical system are intersected by each other in a layout. This allows the light source, the concave mirror, and the display device to be arranged in compactness adjacent to the eyepiece optical system without increasing the optical power of an illumination optical system. As the result, the apparatus can easily be minimized in the thickness or the overall size. A hologram optical element is provided where the relationship between the wavelength range ??1 at half of the diffraction efficiency of each of the three primary colors of the light in the hologram optical element and the wavelength range ??2 at half of the intensity of each of the three primary colors of the light emitted from the light source is defined by ??1 <??2.

Abstract: In a laser exposure device according to the present invention, a positioning pin, which is formed in a lens holder supporting a lens system, is inserted through an elongated hole for restriction of a board holder supporting a laser diode. An eccentric cam is inserted into an elongated hole for rotation movement formed in a board holder and a circular hole for rotation movement which is formed in the lens holder and which faces the elongated hole for rotation movement. An eccentric cam is inserted into an elongated hole for slide movement formed in the board holder and a circular hole for slide movement which is formed in the lens holder and which faces the elongated hole for slide movement. The eccentric cams are rotated to relatively move the board holder and lens holder with respect to each other to thereby establish alignment between the optical axes of the laser diode and lens system.

Abstract: An exposure device includes a mirror to reflect light used for exposure of an object, a holder to hold the mirror, an adhesive that bonds the mirror to the holder and elastically deforms, and an adjusting tool that pushes the mirror to change a direction of the mirror.

Abstract: An optical information recording and reproducing apparatus relating to the invention employs a two-beam interference method. In the optical information recording and reproducing apparatus, a moving device moves an information recording medium between a recording and reproducing position and a retracting position, and a mirror moves together with the information recording medium. When the information recording medium moves to the recording and reproducing position, the mirror moves to a position which is displaced from the at least one of the reference beam and the information beam. When the information recording medium moves to the retracting position, the mirror moves to a position where the mirror can reflect the at least one of the reference beam and the information beam toward a detector for detecting a deviation of the at least one of the reference beam and the information beam.

Abstract: A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer.

Abstract: A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.

Abstract: A volume-phase reflection hologram optical element is fabricated by exposing a hologram photosensitive material to two coherent light beams. One exposure light beam has an axis-asymmetric wavefront, and the other exposure light beam has focus points different in the optical axis direction (Z-direction) between on a plane (ZX-plane) including one of two directions (X- and Y-directions) mutually perpendicular on a sectional plane perpendicular to that light beam and on a plane (YZ-plane) including the other of those two directions. Thus, an image display apparatus is realized in which at the time of reproduction, the component of a predetermined wavelength of the image light diffraction-reflected by the hologram optical element is focused at positions different in the optical axis direction between on the ZX-plane and on the YZ-plane, offering different image viewing characteristics between in the X- and Y-directions.

Abstract: A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×1020 cm?3.

Abstract: The present invention relates to polymerizable compositions, comprising at least two specific benzoxazines and to cured products obtained from the polymerizable compositions. More particularly, the present invention relates to increasing the polymerization rate of polymerizable compositions via incorporation of at least one specific benzoxazine.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.

Abstract: A method for production of an N-carboxy amino acid anhydride with efficiency is provided. The method for production of an N-carboxy amino acid anhydride includes a step of reaction of an amino acid organic salt compound with a carbonic acid diester.

Abstract: Information light modulated and emitted by a modulation element is led to a recording medium through a Fourier transform optical system and an optical path shifter. An interference image is recorded on the recording medium by interference of the information light and reference light. A deflection unit of the optical path shifter has a pair of prisms. Optical path of information light transmitted through the respective prisms are shifted in parallel in a direction perpendicular to an optical axis of the Fourier transform optical system. By rotating the deflection unit around the optical axis, it is possible to shift the optical path of the information light around the optical axis while shifting the optical path in the direction perpendicular to the optical axis. Therefore, it is unnecessary to perform complicated control and it is possible to multiply record an interference image accurately with an information recording apparatus having a simple structure.

Abstract: The present invention provides a process for producing an amino acid N-carboxyanhydride, which comprises reacting an amino acid or a derivative thereof with a compound represented by the following formula (1): wherein R1 and R2 represent the same or different electron-withdrawing substituents and each independently are an optionally substituted acyl group, an optionally substituted alkyloxycarbonyl group, an optionally substituted perfluoroalkyl group, an optionally substituted perchloroalkyl group, a cyano group, a halogen atom, or a nitro group; and a and b are the same or different and each are an integer of 1-5.