Abstract: Information light modulated and emitted by a modulation element is led to a recording medium through a Fourier transform optical system and an optical path shifter. An interference image is recorded on the recording medium by interference of the information light and reference light. A deflection unit of the optical path shifter has a pair of prisms. Optical path of information light transmitted through the respective prisms are shifted in parallel in a direction perpendicular to an optical axis of the Fourier transform optical system. By rotating the deflection unit around the optical axis, it is possible to shift the optical path of the information light around the optical axis while shifting the optical path in the direction perpendicular to the optical axis. Therefore, it is unnecessary to perform complicated control and it is possible to multiply record an interference image accurately with an information recording apparatus having a simple structure.

Abstract: The present invention provides a process for producing an amino acid N-carboxyanhydride, which comprises reacting an amino acid or a derivative thereof with a compound represented by the following formula (1): wherein R1 and R2 represent the same or different electron-withdrawing substituents and each independently are an optionally substituted acyl group, an optionally substituted alkyloxycarbonyl group, an optionally substituted perfluoroalkyl group, an optionally substituted perchloroalkyl group, a cyano group, a halogen atom, or a nitro group; and a and b are the same or different and each are an integer of 1-5.

Abstract: A method and system for fluid characterization in an underground formation surrounding a borehole are provided. Acoustic signals are transmitted and received in the borehole. The received acoustic signals are processed to obtain at least one attribute of formation mobility. Formation fluid is characterized based on a change of the at least one attribute. A decision is made based on the characterization output.

Abstract: An optical scanning device of an embodiment includes: a deflection unit which deflects a light beam emitted from a light source, in a main scanning direction; a reflection mirror which reflects the light beam from the deflection unit toward an image carrier; a supporting member which supports each of two ends of the reflection mirror; a plate situated on a back side that is opposite to an incident surface for the light beam, of the reflection mirror, along the axial line of the reflection mirror; a holding unit which holds an end of the incident surface with an end of the plate from the back side of the reflection mirror; and a pressing member which presses the back side of the reflection mirror in a curvature correcting direction against the plate.

Abstract: The light directed from a light source to a concave mirror and the light directed from a display device to an eyepiece optical system are intersected by each other in a layout. This allows the light source, the concave mirror, and the display device to be arranged in compactness adjacent to the eyepiece optical system without increasing the optical power of an illumination optical system. As the result, the apparatus can easily be minimized in the thickness or the overall size. A hologram optical element is provided where the relationship between the wavelength range ??1 at half of the diffraction efficiency of each of the three primary colors of the light in the hologram optical element and the wavelength range ??2 at half of the intensity of each of the three primary colors of the light emitted from the light source is defined by ??1<??2.

Abstract: An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n?-type drift layer to extend into the n?-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.

Abstract: A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020 cm?3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.

Abstract: A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

Abstract: A silicon carbide semiconductor device is disclosed. The silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type and located on a first surface of the substrate; and a vertical type semiconductor element. The vertical type semiconductor element includes: an impurity layer having a second conductivity type, and located in a surface portion of the drift layer; and a first conductivity type region located in the drift layer, spaced away from the impurity layer, located closer to the substrate than the impurity layer, and having an impurity concentration higher than the drift layer.

Abstract: A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.

Abstract: The present invention relates to compositions comprising an epoxy resin; a reagent selected from the group of cationic compounds or compounds which are capable to form cationic compounds or mixtures of those; at least one compound with two aromatic rings and at least one central cyclic oxygen bridged ring and the use of such compositions in adhesives, sealants and coatings.

Abstract: The present invention relates to adhesion-improved, curable compositions comprising a cyclic ether, a cyclic thiocarbonate, an amine and a carboxylic acid. A method of making such compositions and their use in adhesives, sealants and coatings are also provided.

Abstract: The present invention relates to a catalyst, which is an organic component with electron withdrawing substituents and to compositions with such catalyst and at least one benzoxazine component, and the use of such compositions in adhesives, sealants and coatings.

Abstract: An optical information recording and reproducing apparatus relating to the invention employs a two-beam interference method. In the optical information recording and reproducing apparatus, a moving device moves an information recording medium between a recording and reproducing position and a retracting position, and a mirror moves together with the information recording medium. When the information recording medium moves to the recording and reproducing position, the mirror moves to a position which is displaced from the at least one of the reference beam and the information beam. When the information recording medium moves to the retracting position, the mirror moves to a position where the mirror can reflect the at least one of the reference beam and the information beam toward a detector for detecting a deviation of the at least one of the reference beam and the information beam.

Abstract: In the optical information recording reproducing apparatus that makes a reference light beam to interfere with an information light beam so as to record the information of the information light beam in a recording medium based on a two light beam interference method, or irradiates the reference light beam to a recording medium so as to emit a light beam and reproduces information stored in the recording medium by leading the light beam emitted from the recording medium an the image light receiving element, the optical information recording reproducing apparatus comprises a detector to detect positional deviation of at least one of the reference light beam and the information light beam from a predetermined optical path; and a correcting mechanism to correct the positional deviation based on an output from the detector.

Abstract: Polymerizable combinations, comprising at least one first component selected from the group of benzoxazine monomers and at least one second component selected from the group of aromatic esters are described. Furtheron the use of aromatic esters as additives to benzoxazine monomers as well as methods of coating a device by heating the above mentioned combination, and a device, coated by that way is explained.

Abstract: The invention relates to a working vehicle which can improve a workability of a maintenance, inspection and the like with respect to a portion around an engine, and can tilt up a rear hood together with a tilt-up floor. An upper side of an engine (not shown) can be covered in a rear end portion side of a floor (35). A hinge mechanism (38) is arranged between a front end portion of the floor (35) and a rev-frame (25), and the floor (35) can be tilted up via the hinge mechanism (38). A rear hood (32) is coupled by hinge to a first support column (15) of a mounting bracket (4) supporting the floor (35), and is structured so as to be freely opened and closed. It is possible to tilt up the floor (35) in a state of attaching the rear hood (32), by canceling a fixed state of the mounting bracket (4) to a supporting and fixing member such as a counter weight (2) or the like.

Abstract: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.

Abstract: The present invention relates to a polymerization catalyst, comprising at least two components, wherein at least one or more of said at least two components are selected from the group of nitrogen containing heterocycles and/or their derivatives and at least one or more of said at least two components is selected from the group of organic sulfur containing acids and/or derivatives of organic sulfur containing acids.

Abstract: A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench via a gate insulation film; a source electrode on the source region; and a drain electrode on a second side of the substrate. The source region has multi-layered structure including a first layer and a second layer. The first layer as an upper layer contacts the source electrode with ohmic contact. The second layer as a lower layer has an impurity concentration, which is lower than an impurity concentration of the first layer.