Abstract: An object of the present invention is to provide an anti-tumor agent that exhibits a remarkably excellent anti-tumor effect. According to the present invention, there is provided an anti-tumor agent for curing cancer, the anti-tumor agent having a liposome which has an inner water phase and having an aqueous solution which is an outer water phase and disperses the liposome, in which the liposome encompasses topotecan or a salt thereof, a lipid constituting the liposome contains a lipid modified with polyethylene glycol, dihydrosphingomyelin, and cholesterol, the inner water phase contains an ammonium salt, and the topotecan or the salt thereof encompassed in the liposome is administered at a dose rate of 0.1 mg/m2 body surface area to 10 mg/m2 body surface area, in terms of topotecan per administration.

Abstract: There is provided a piezoelectric stack including: a substrate (1); a bottom electrode film (2) on the substrate; a piezoelectric film (3) on the bottom electrode film, having a planar area smaller than a planar area of the bottom electrode film; a top electrode film (4) on the piezoelectric film; and an insulating film (5) provided from the top electrode film to the bottom electrode film and covering at least a part of a side surface of the piezoelectric film, wherein the insulating film has a slope (9a) filling a step between a top surface of the top electrode film and a top surface of the bottom electrode film, and the slope has a shape alleviating the step.

Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

Abstract: A puncture needle according to the present disclosure includes a puncture portion having a blade surface at a distal-end surface; and a retained portion connected to a proximal-end puncture-portion side and configured to be retained by a hub. The puncture portion includes a slit extending to the distal-end surface. The retained portion includes: a tubular portion having a substantially constant outer diameter larger than a maximum outer diameter of the puncture portion, and a tapered portion located between the puncture portion and the tubular portion, an outer diameter of the tapered portion gradually decreasing from a tubular-portion side to a puncture-portion side, wherein in a lateral view with the slit facing upward, lower contour lines of the puncture portion, the tubular portion, and the tapered portion are collinear.

Abstract: Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 ?m or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.

Abstract: Reduce inventory cost without preparing a control device for each destination in advance. This control device is for controlling industrial machinery and includes an encryption unit, and comprises: an encryption device unit that includes a plurality of encryption units corresponding to each of a plurality of destinations, and a plurality of invalidation units that invalidate any one of the plurality of encryption units or invalidate the plurality of encryption units; and an operating unit that, depending on the destination of the control device, selects invalidation of the encryption units by specifying to each of the plurality of invalidation units to invalidate one of the plurality of encryption units or to invalidate the plurality of encryption units.

Abstract: There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.

Abstract: There is provided a piezoelectric stack, including: a substrate; an oxide film on the substrate, containing zinc and oxygen as main elements; an electrode film on the oxide film; and a piezoelectric film on the electrode film, being an alkali niobium oxide film containing potassium, sodium, niobium, and oxygen and having a perovskite structure.

Abstract: There is provided a nitride crystal substrate having a main surface and formed of group-III nitride crystal, wherein NIR/NElec, satisfies formula (1) below, which is a ratio of a carrier concentration NIR at a center of the main surface relative to a carrier concentration NElec: 0.5?NIR/NElec?1.5 . . . (1) where NIR is the carrier concentration on the main surface side of the nitride crystal substrate obtained based on a reflectance of the main surface measured by a reflection type Fourier transform infrared spectroscopy, and NElec is the carrier concentration in the nitride crystal substrate obtained based on a specific resistance of the nitride crystal substrate and a mobility of the nitride crystal substrate measured by an eddy current method.

Abstract: There is provided a semiconductor laminate, comprising: a substrate; and a p-type layer provided above the substrate and comprising a group III nitride containing Mg, wherein C concentration in the p-type layer is less than 5 × 1015 cm-3, O concentration in the p-type layer is less than 5 × 1015 cm-3, Si concentration in the p-type layer is less than 1×1015 cm-3, and F concentration in the p-type layer is 1×1014 cm-3 or more.

Abstract: A contact structure causing a first electric device to be electrically connected to a second electric device includes first terminals and second terminals. The second terminals include contact projections to be electrically connected to the first terminals, and cleaning projections located closer to an opening side of a fitting part of the second electric device than the contact projections to be brought into contact with the first terminals. The contact structure is configured such that the contact projections are not in contact with a surface of an outer case of the first electric device or surfaces of the first terminals before the cleaning projections climb over the first terminals. The contact structure is also configured such that the contact projections are brought into contact with the surfaces of the first terminals after the cleaning projections climb over the first terminals.

Abstract: A dilution gas mixing unit that is used in an exhaust gas analysis system that analyzes the mixed gas obtained by diluting an exhaust gas with the dilution gas, and mixes the dilution gas with the exhaust gas is provided with a dilution gas supply pipe that is connected to an exhaust gas introduction pipe into which the exhaust gas is introduced and supplies the dilution gas to the exhaust gas introduction pipe, a dilution gas sampling unit that is provided in the dilution gas supply pipe and collects the dilution gas, and a backflow prevention member that is provided closer to the exhaust gas introduction pipe than the dilution gas sampling unit in the dilution gas supply pipe and prevents the mixed gas from flowing backward through the dilution gas supply pipe.

Abstract: There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.

Abstract: The vehicle control device sets a region including a stationary object on a road, calculates a passing position at which a host vehicle and an oncoming vehicle pass each other in accordance with a velocity of the host vehicle and a position and a velocity of the oncoming vehicle, calculates a first score that is a larger value as the velocity of the oncoming vehicle is greater, calculates a second score that is a larger value as an acceleration rate of the oncoming vehicle is greater, integrates the first score with the second score so as to calculate an integration score, and causes the host vehicle to decelerate when the integration score is greater than or equal to a predetermined value or causing the host vehicle to keep the velocity or accelerate when the integration score is smaller than the predetermined value.

Abstract: A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.

Abstract: The vehicle control device sets a region including a stationary object on a road, calculates a passing position at which a host vehicle and an oncoming vehicle pass each other in accordance with a velocity of the host vehicle and a position and a velocity of the oncoming vehicle, calculates a first score that is a larger value as the velocity of the oncoming vehicle is greater, calculates a second score that is a larger value as an acceleration rate of the oncoming vehicle is greater, integrates the first score with the second score so as to calculate an integration score, and causes the host vehicle to decelerate when the integration score is greater than or equal to a predetermined value or causing the host vehicle to keep the velocity or accelerate when the integration score is smaller than the predetermined value.

Abstract: An object of the present disclosure is to provide a technique capable of attaining an AlN template which has less strain and is suitable for producing the ultraviolet LED. Provided is a nitride semiconductor laminate structure, including at least a sapphire substrate, a first AlN layer formed on a principal surface of the sapphire substrate, and a second AlN layer formed on the first AlN layer, wherein an absolute value of a strain amount ?2 of the second AlN layer in the a-axis direction is smaller than an absolute value of a strain amount ?1 of the first AlN layer in the a-axis direction.

Abstract: A circuit board assembly includes a first circuit board, a second circuit board having a first side extending adjacent to a first side of the first circuit board, and a metal fitting including a portion bent at the angle and spanning both the first side of the first circuit board and the first side of the second circuit board. The second circuit board is in a posture having an angle other than 180° to the first circuit board. The metal fitting is fixed to both the first circuit board and the second circuit board.

Abstract: The voltage hold circuit is a voltage hold circuit configured to operate every processing cycle, the processing cycle including a hold period and a reset period following the hold period, and hold a voltage value for an input voltage signal, the voltage hold circuit including: a first hold circuit configured to operate to hold a minimum voltage value for the input voltage signal in the hold period every the processing cycle; and a second hold circuit configured to operate to hold a maximum voltage value for the input voltage signal in the reset period every the processing cycle.

Abstract: An object is to improve quality of a nitride crystal. A crystal represented by a composition formula InxAlyGa1?x?yN (satisfying 0?x?1, 0?y?1, and 0?x+y?1), wherein the concentration of carbon in the crystal is less than 1×1015 cm?3, and the concentration of an electron trap E3 that exits in an energy range from 0.5 eV to 0.65 eV from a lower end of a conduction band in the crystal is less than 1×1014 cm?3.