Abstract: An image processing apparatus for reconstructing a tomographic image from a plurality of projection images acquires noise data for a plurality of projection images, respectively, acquires noise reconstruction data by executing reconstruction processing based on the acquired noise data, and reconstructs the tomographic image by executing the reconstruction processing based on the projection images and the noise reconstruction data.

Abstract: It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

Abstract: There is provided an image processing apparatus for reconstructing a tomographic image of a subject based on a plurality of projection images obtained by detecting radiation emitted from a plurality of different positions. The image processing apparatus reconstructs a first tomographic image from the plurality of projection images, extracts a fixed pattern occurring in the first tomographic image due to a radiation detector, and forms a second tomographic image by updating the first tomographic image using a value concerning intensity of the fixed pattern as a regularization term. The image processing apparatus outputs, as the tomographic image of the subject, the second tomographic image obtained by the update.

Abstract: A thin film transistor includes, an insulating substrate, a gate electrode provided on an upper surface of the insulating substrate, a gate insulating film formed so as to cover the gate electrode, an oxide semiconductor layer provided on the gate insulating film, a channel protective layer provided at least on an upper surface of the oxide semiconductor layer, and a source electrode and a drain electrode provided so as to come into contact with the oxide semiconductor layer, wherein the channel protective layer is formed such that the film density of a portion provided so as to come into contact with the oxide semiconductor layer is higher than the film density of a portion distant from the oxide semiconductor layer.

Abstract: The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate electrodes; an oxide semiconductor formed on the gate insulating film; drain electrodes and source electrodes formed at a distance from each other with channel regions of the oxide semiconductor in between; an interlayer capacitor film for covering the drain electrodes and source electrodes; common electrodes formed on top of the interlayer capacitor film; and pixel electrodes formed so as to face the common electrodes, and wherein an etching stopper layer for covering the channel regions is formed between the oxide semiconductor and the drain electrodes and source electrodes, the drain electrodes are a multilayer film where a transparent conductive film and a metal film are layered on top of each other, and the drain electrodes and source electrodes make direct contact with the oxide semiconductor.

Abstract: An image processing apparatus acquires a radiation image captured by irradiating an object with a radiation from a radiation source, estimates a scattered radiation image included in the acquired radiation image, and outputs a corrected image obtained by reducing the scattered radiation image from the acquired radiation image. The image processing apparatus estimates the scattered radiation image by applying a scattered radiation model for obtaining a scattered radiation component to the acquired radiation image based on a specific frequency component of an output of a first function and a specific frequency component of an output of a second function different from the first function.

Abstract: In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.

Abstract: An information processing apparatus has a decomposition unit that decomposes an image into multiple frequency component images, a reduction unit that reduces linear noise included in the frequent component images, and a reconstruction unit that reconstructs the frequency component images with reduced linear noise.

Abstract: Even in a case where radiation imaging is performed using a grid, data lack which occurs at a time of radiation detection is appropriately corrected. An FPD controller 105 obtains data of an image captured by detecting radial rays. A data lack ratio calculation unit 111 calculates data lack ratios in the image data. A fitting unit 112 performs fitting so that a model function representing the data lack fits the data lack ratios. A correction processing unit 113 corrects the image data in accordance with the model function obtained by the fitting.

Abstract: In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.

Abstract: There is provided an image processing apparatus for reconstructing a tomographic image of a subject based on a plurality of projection images obtained by detecting radiation emitted from a plurality of different positions. The image processing apparatus reconstructs a first tomographic image from the plurality of projection images, extracts a fixed pattern occurring in the first tomographic image due to a radiation detector, and forms a second tomographic image by updating the first tomographic image using a value concerning intensity of the fixed pattern as a regularization term. The image processing apparatus outputs, as the tomographic image of the subject, the second tomographic image obtained by the update.

Abstract: A thin film transistor includes, an insulating substrate, a gate electrode provided on an upper surface of the insulating substrate, a gate insulating film formed so as to cover the gate electrode, an oxide semiconductor layer provided on the gate insulating film, a channel protective layer provided at least on an upper surface of the oxide semiconductor layer, and a source electrode and a drain electrode provided so as to come into contact with the oxide semiconductor layer, wherein the channel protective layer is formed such that the film density of a portion provided so as to come into contact with the oxide semiconductor layer is higher than the film density of a portion distant from the oxide semiconductor layer.

Abstract: It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.

Abstract: A thin film transistor includes, an insulating substrate, a gate electrode provided on an upper surface of the insulating substrate, a gate insulating film formed so as to cover the gate electrode, an oxide semiconductor layer provided on the gate insulating film, a channel protective layer provided at least on an upper surface of the oxide semiconductor layer, and a source electrode and a drain electrode provided so as to come into contact with the oxide semiconductor layer, wherein the channel protective layer is formed such that the film density of a portion provided so as to come into contact with the oxide semiconductor layer is higher than the film density of a portion distant from the oxide semiconductor layer.

Abstract: An information processing apparatus has a decomposition unit that decomposes an image into multiple frequency component images, a reduction unit that reduces linear noise included in the frequent component images, and a reconstruction unit that reconstructs the frequency component images with reduced linear noise.

Abstract: Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film provided so as to cover one surface of the gate electrode, an oxide semiconductor provided so as to overlap the gate insulating film, and a source electrode and a drain electrode, which are provided so as to overlap the oxide semiconductor. The semiconductor device also includes an oxygen-atom-containing film provided between the gate insulating film, and, the source electrode and the drain electrode, so as to be held in contact with the oxide semiconductor.

Abstract: It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

Abstract: An information processing apparatus has a decomposition unit that decomposes an image into multiple frequency component images, a reduction unit that reduces linear noise included in the frequent component images, and a reconstruction unit that reconstructs the frequency component images with reduced linear noise.

Abstract: A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.