Abstract: An image processing apparatus for executing reconstruction of a tomographic image from a plurality of radiation projection images by using a reconstruction filter comprises an obtaining unit that obtains the radiation projection images obtained by detecting X-rays irradiated from a plurality of positions by a digital radiation detector; a reconstructing unit that executes the reconstructing process of the tomographic image on the basis of the obtained radiation projection images and the reconstruction filter; and a processing unit that reduces an influence on a first pixel value of a pixel obtained by the reconstruction filter, that influence having been exerted by a second pixel in which a difference between a pixel value of a target pixel of a filtering process in the radiation projection image and a pixel value of a peripheral pixel of the target pixel is larger than a predetermined threshold value in the reconstructing process.

Abstract: An image processing apparatus which processes an image obtained by tomosynthesis shooting by using a radiation source and a two-dimensional detector. The image processing apparatus includes an obtaining unit configured to obtain a plurality of projection data output from the two-dimensional detector upon tomosynthesis shooting; and a reconstruction unit configured to perform analytical reconstruction processing of a tomogram of a subject from the plurality of projection data obtained by tomosynthesis shooting without transforming the projection data into virtual projection data on a virtual CT detection plane virtually set to be perpendicular to a radiation center direction of the radiation source.

Abstract: A thin film transistor includes a drain electrode layer and a source electrode layer that are formed above an oxide semiconductor layer via an insulating film. The drain electrode layer and the source electrode layer are electrically connected with the oxide semiconductor layer via through-holes formed in the insulating film. A first through-hole that electrically connects the drain electrode layer with the oxide semiconductor layer and a second through-hole that electrically connects the source electrode layer with the oxide semiconductor layer each include two or more through-holes that are arranged in parallel in a channel width direction of the thin film transistor. A total width of opening widths of the first or second through-holes in the channel width direction is a channel width of the thin film transistor.

Abstract: In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.

Abstract: A gate insulating film has a convex portion conforming to a surface shape of a gate electrode and a step portion that changes in height from a periphery of the gate electrode along the surface of the gate electrode. An oxide semiconductor layer is disposed on the gate insulating film so as to have a transistor constituting region having a channel region, a source region, and a drain region in a continuous and integral manner and a covering region being separated from the transistor constituting region and covering the step portion of the gate insulating film. A channel protective layer is disposed on the channel region of the oxide semiconductor layer. A source electrode and a drain electrode are disposed in contact respectively with the source region and the drain region of the oxide semiconductor layer. A passivation layer is disposed on the source electrode and the drain electrode.

Abstract: Provided a display device including a thin film transistor. The thin film transistor includes a gate electrode, a gate insulating layer which covers the gate electrode, an oxide semiconductor film above the gate insulating layer, a source electrode and a drain electrode which are respectively provided in contact with a first region and a second region, which are provided in the upper surface of the oxide semiconductor film, and a channel protective film which is provided in contact with a third region between the first region and the second region. In plan view, a region of the oxide semiconductor film, which overlaps with the gate electrode, is smaller than the third region, and a portion of the oxide semiconductor film except for a portion which overlaps with the gate electrode has a resistance lower than the portion.

Abstract: Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.

Abstract: An image processing apparatus for reconstructing a tomographic image from a plurality of projection images acquires noise data for a plurality of projection images, respectively, acquires noise reconstruction data by executing reconstruction processing based on the acquired noise data, and reconstructs the tomographic image by executing the reconstruction processing based on the projection images and the noise reconstruction data.

Abstract: An information processing apparatus performs first filter processing to combine pixels of an image along a predetermined direction. A line noise image is extracted by executing second filter processing for the processed image along a direction different from the predetermined direction. The extracted line noise image is subtracted from the image to acquire a line noise reduced image.

Abstract: It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

Abstract: Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing, an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.

Abstract: A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

Abstract: A gate insulating film has a convex portion conforming to a surface shape of a gate electrode and a step portion that changes in height from a periphery of the gate electrode along the surface of the gate electrode. An oxide semiconductor layer is disposed on the gate insulating film so as to have a transistor constituting region having a channel region, a source region, and a drain region in a continuous and integral manner and a covering region being separated from the transistor constituting region and covering the step portion of the gate insulating film. A channel protective layer is disposed on the channel region of the oxide semiconductor layer. A source electrode and a drain electrode are disposed in contact respectively with the source region and the drain region of the oxide semiconductor layer. A passivation layer is disposed on the source electrode and the drain electrode.

Abstract: An information processing apparatus comprises: a spatial filtering unit configured to perform spatial filtering in a frequency range based on a spatial frequency of an object for image data of a current frame; and a recursive filtering unit configured to perform recursive filtering by obtaining image data, which has been processed prior to the current frame, from a memory, multiplying the obtained image data by a coefficient ? (?<1), adding the image data multiplied by the coefficient ? to the image data of the current frame after the spatial filtering, and storing the image data after the addition in the memory.

Abstract: It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

Abstract: The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate electrodes; an oxide semiconductor formed on the gate insulating film; drain electrodes and source electrodes formed at a distance from each other with channel regions of the oxide semiconductor in between; an interlayer capacitor film for covering the drain electrodes and source electrodes; common electrodes formed on top of the interlayer capacitor film; and pixel electrodes formed so as to face the common electrodes, and wherein an etching stopper layer for covering the channel regions is formed between the oxide semiconductor and the drain electrodes and source electrodes, the drain electrodes are a multilayer film where a transparent conductive film and a metal film are layered on top of each other, and the drain electrodes and source electrodes make direct contact with the oxide semiconductor.

Abstract: An information processing apparatus has a decomposition unit that decomposes an image into multiple frequency component images, a reduction unit that reduces linear noise included in the frequent component images, and a reconstruction unit that reconstructs the frequency component images with reduced linear noise.

Abstract: A thin film transistor includes, an insulating substrate, a gate electrode provided on an upper surface of the insulating substrate, a gate insulating film formed so as to cover the gate electrode, an oxide semiconductor layer provided on the gate insulating film, a channel protective layer provided at least on an upper surface of the oxide semiconductor layer, and a source electrode and a drain electrode provided so as to come into contact with the oxide semiconductor layer, wherein the channel protective layer is formed such that the film density of a portion provided so as to come into contact with the oxide semiconductor layer is higher than the film density of a portion distant from the oxide semiconductor layer.

Abstract: A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

Abstract: In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.