Patents by Inventor Taketomi Asami
Taketomi Asami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10103211Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: GrantFiled: August 4, 2017Date of Patent: October 16, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
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Publication number: 20170358638Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: ApplicationFiled: August 4, 2017Publication date: December 14, 2017Inventors: Satoshi MURAKAMI, Mitsuhiro ICHIJO, Taketomi ASAMI
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Patent number: 9761645Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: GrantFiled: June 9, 2016Date of Patent: September 12, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
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Publication number: 20160293684Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: ApplicationFiled: June 9, 2016Publication date: October 6, 2016Inventors: Satoshi MURAKAMI, Mitsuhiro ICHIJO, Taketomi ASAMI
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Patent number: 9368561Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: GrantFiled: August 7, 2014Date of Patent: June 14, 2016Assignee: Semiconductor Enery Laboratory Co., Ltd.Inventors: Satoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
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Patent number: 8951902Abstract: The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.Type: GrantFiled: January 31, 2012Date of Patent: February 10, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Taketomi Asami, Mitsuhiro Ichijo, Satoshi Toriumi, Takashi Ohtsuki, Shunpei Yamazaki
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Publication number: 20140346489Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: ApplicationFiled: August 7, 2014Publication date: November 27, 2014Inventors: Satoshi MURAKAMI, Mitsuhiro ICHIJO, Taketomi ASAMI
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Patent number: 8803152Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: GrantFiled: April 18, 2013Date of Patent: August 12, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
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Patent number: 8603899Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.Type: GrantFiled: October 25, 2012Date of Patent: December 10, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Taketomi Asami, Mitsuhiro Ichijo, Satoshi Toriumi
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Publication number: 20130228784Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: ApplicationFiled: April 18, 2013Publication date: September 5, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi MURAKAMI, Mitsuhiro ICHIJO, Taketomi ASAMI
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Patent number: 8450741Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: GrantFiled: September 6, 2011Date of Patent: May 28, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
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Patent number: 8304327Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.Type: GrantFiled: February 25, 2010Date of Patent: November 6, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Taketomi Asami, Mitsuhiro Ichijo, Satoshi Toriumi
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Publication number: 20120129329Abstract: The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.Type: ApplicationFiled: January 31, 2012Publication date: May 24, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Taketomi ASAMI, Mitsuhiro ICHIJO, Satoshi TORIUMI, Takashi OHTSUKI, Shunpei YAMAZAKI
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Patent number: 8138101Abstract: The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.Type: GrantFiled: April 17, 2007Date of Patent: March 20, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Taketomi Asami, Mitsuhiro Ichijo, Satoshi Toriumi, Takashi Ohtsuki, Shunpei Yamazaki
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Publication number: 20110315969Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: ApplicationFiled: September 6, 2011Publication date: December 29, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Satoshi MURAKAMI, Mitsuhiro ICHIJO, Taketomi ASAMI
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Patent number: 8022404Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: GrantFiled: June 16, 2008Date of Patent: September 20, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
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Patent number: 8012529Abstract: According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.Type: GrantFiled: July 18, 2007Date of Patent: September 6, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichiro Sakata, Masakazu Murakami, Koji Moriya, Yoshiaki Oikawa, Taketomi Asami, Hisashi Ohtani
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Patent number: 7855416Abstract: Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of ?4 to ?3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B) manufactured from SiH4 and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.Type: GrantFiled: November 24, 2008Date of Patent: December 21, 2010Assignee: Semiconductor Energy laboratory Co., Ltd.Inventors: Hidehito Kitakado, Masahiko Hayakawa, Shunpei Yamazaki, Taketomi Asami
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Publication number: 20100151664Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.Type: ApplicationFiled: February 25, 2010Publication date: June 17, 2010Inventors: Taketomi Asami, Mitsuhiro Ichijo, Satoshi Toriumi
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Patent number: 7670881Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.Type: GrantFiled: March 8, 2007Date of Patent: March 2, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Taketomi Asami, Mitsuhiro Ichijo, Satoshi Toriumi