Abstract: A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.

Abstract: A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.

Abstract: A semiconductor layer may be subjected to etching to form a trench therein. An epitaxial layer may be further formed in the trench. Here, the impurity concentration of the epitaxial layer is controlled to be lower than that of the semiconductor layer. In this manner, concentration of electrical fields in the trench is reduced. A first innovations herein provides a semiconductor device including a first semiconductor layer containing impurities of a first conductivity type, a trench provided in the first semiconductor layer on a front surface side thereof, and a second semiconductor layer provided on an inner wall of the trench, where the second semiconductor layer contains impurities of the first conductivity type at a lower concentration than the first semiconductor layer.

Abstract: A screen oxide film is formed on an n? drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film (61) is formed. N-type impurity ions at a concentration higher than that of the n? drift layer are implanted through the nitride shielding film (61) from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer (7) is formed. The screen oxide film is removed. A gate oxide film (3a) is formed. A gate electrode (9) is formed on the gate oxide film (3a). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, p? well regions (10) are formed.

Abstract: A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.

Abstract: A semiconductor device according to the invention includes p-type well region 3 and n+ source region 4, both formed selectively in the surface portion of n? drift region 2; trench 6 in contact with n+ source region 4 and extending through p-type well region 3 into n? drift region 2; field plate 8 formed in trench 6 with first insulator film 7 interposed between the trench 6 inner surface and field plate 8; gate electrode 10 formed in trench 6 with second insulator film 9 interposed between the trench 6 side wall and gate electrode 10, gate electrode 10 being formed above field plate 8; first insulator film 7 being thicker than second insulator film 9; and n? lightly doped region 21 in n? drift region 2, n? lightly doped region 21 crossing under the bottom surface of trench 6 from the corner portion thereof, n? lightly doped region 21 covering the bottom surface of trench 6.

Abstract: A semiconductor device in which current sensing accuracy is maintained while ruggedness of a current sensing region is improved. The semiconductor device includes a semiconductor substrate; a main element provided on the semiconductor substrate and having a first trench gate structure including a first trench disposed on a first main surface side of the semiconductor substrate; a gate insulating film disposed along an inner wall of the first trench; and a gate electrode disposed inside the first trench; and a current detecting element for detecting a current flowing into the semiconductor substrate when the main element is operating provided on the semiconductor substrate and having a second trench gate structure including a second trench disposed on the first main surface side of the semiconductor substrate; the gate insulating film disposed along an inner wall of the second trench; and the gate electrode disposed inside the second trench.

Abstract: A MOS semiconductor device has a MOS structure, including a p? region that surrounds an n+-type source region and has a net doping concentration lower than a concentration of a p-type impurity in a surface of a p-type well region, and a gate electrode that is provided on top of the surface of the p-type well region sandwiched between the n+-type source region and a surface layer of an n? layer, with a gate insulator disposed between the p-type well region and the gate electrode. This configuration can make the gate insulator thicker without increasing a gate threshold voltage, and help improve the reliability of the gate insulator and reduce the gate capacitance.

Abstract: A screen oxide film is formed on an n? drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film (61) is formed. N-type impurity ions at a concentration higher than that of the n? drift layer are implanted through the nitride shielding film (61) from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer (7) is formed. The screen oxide film is removed. A gate oxide film (3a) is formed. A gate electrode (9) is formed on the gate oxide film (3a). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, p? well regions (10) are formed.

Abstract: A front surface electrode common to a plurality of unit cells is provided substantially all over an active region of a semiconductor element. A plurality of electrode pads on the front surface electrode are closer to the outer peripheral portion side than the central portion of the active region. Different wires are joined to substantially the center of each electrode pad. The active region is divided into two or more segments so that the segments are aligned along the path of current flowing through the front surface electrode, and unit cells different in conduction ability are disposed respectively in each segment. Unit cells lowest in conduction ability are in the first segment farthest from junctions of the wires and electrode pads, and the unit cells are disposed so that the farther apart from the junctions of the wires and electrode pads, the lower in conduction ability the unit cells are.

Abstract: A deterioration of a gate threshold voltage, which is caused by a stress and a thermal hysteresis when wire bonding for a surface of an electrode layer of a semiconductor device is performed, can be suppressed. The semiconductor device includes a metallic film provided at a surface of a semiconductor chip, and a wire bonded to an upper surface of the metallic film. The metallic film has a plurality of grains, particle diameters of the grains are substantially equal to or more than a thickness of the metallic film.

Abstract: A semiconductor device according to the invention includes p-type well region 3 and n+ source region 4, both formed selectively in the surface portion of n? drift region 2; trench 6 in contact with n+ source region 4 and extending through p-type well region 3 into n? drift region 2; field plate 8 formed in trench 6 with first insulator film 7 interposed between the trench 6 inner surface and field plate 8; gate electrode 10 formed in trench 6 with second insulator film 9 interposed between the trench 6 side wall and gate electrode 10, gate electrode 10 being formed above field plate 8; first insulator film 7 being thicker than second insulator film 9; and n?? lightly doped region 21 in n? drift region 2, n?? lightly doped region 21 crossing under the bottom surface of trench 6 from the corner portion thereof, n?? lightly doped region 21 covering the bottom surface of trench 6.

Abstract: A method of manufacturing a MOS-type semiconductor device capable of increasing the thickness of a gate oxide film and obtaining high gate withstanding power and reduced switching loss without increasing a gate threshold voltage Vth is provided. A p-type well region is selectively formed on one principle surface of a semiconductor substrate having an n-type low impurity concentration layer by using an oxide film as a mask. Subsequently, a resist mask is formed on the surface of the p-type well region so as to be separated from the oxide film mask, and an n+-type source region is selectively formed from the separation portion. Subsequently, the oxide film mask is removed. Then, an oxide film is formed on the surface of the p-type well region, and the oxide film is removed. Subsequently, a gate electrode coated with a gate oxide film is formed on the surface of the semiconductor substrate.

Abstract: A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.

Abstract: A MOS semiconductor device has a MOS structure, including a p? region that surrounds an n+-type source region and has a net doping concentration lower than a concentration of a p-type impurity in a surface of a p-type well region, and a gate electrode that is provided on top of the surface of the p-type well region sandwiched between the n+-type source region and a surface layer of an n? layer, with a gate insulator disposed between the p-type well region and the gate electrode. This configuration can make the gate insulator thicker without increasing a gate threshold voltage, and help improve the reliability of the gate insulator and reduce the gate capacitance.

Abstract: A screen oxide film is formed on an n-drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film (61) is formed. N-type impurity ions at a concentration higher than that of the n-drift layer are implanted through the nitride shielding film (61) from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer (7) is formed. The screen oxide film is removed. A gate oxide film (3a) is formed. A gate electrode (9) is formed on the gate oxide film (3a). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, p- well regions (10) are formed.

Abstract: A method of manufacturing a semiconductor device includes forming a first parallel pn layer; depositing a first-conductivity-type first semiconductor layer on a surface of the first parallel pn layer in a step that further includes forming a second parallel pn layer by selectively introducing second-conductivity-type impurities into the first semiconductor layer; and forming first second-conductivity-type impurity regions in positions opposed in a depth direction to regions of the first parallel pn layer in which second-conductivity-type semiconductor regions are formed; and forming a local insulating film on a surface of the first semiconductor layer in a termination structure portion so that an end portion of the local insulating film is positioned on the first second-conductivity-type impurity region, by heating at a low temperature effective to suppress diffusion of the first second-conductivity-type impurity regions.

Abstract: Provided is a semiconductor device manufacturing method such that miniaturization of a parallel p-n layer can be achieved, and on-state resistance can be reduced. Firstly, deposition of an n?-type epitaxial layer, and formation of an n-type impurity region and p-type impurity region that form an n-type region and p-type region of a parallel p-n layer, are repeatedly carried out. Furthermore, an n?-type counter region is formed in the vicinity of the p-type impurity region in the uppermost n?-type epitaxial layer forming the parallel p-n layer. Next, an n?-type epitaxial layer is deposited on the n?-type epitaxial layer. Next, a MOS gate structure is formed in the n?-type epitaxial layer. At this time, when carrying out a p-type base region diffusion process, the n-type and p-type impurity regions are caused to diffuse, thereby forming the n-type region and p-type region of the parallel p-n layer.

Abstract: A screen oxide film is formed on an n-drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film (61) is formed. N-type impurity ions at a concentration higher than that of the n-drift layer are implanted through the nitride shielding film (61) from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer (7) is formed. The screen oxide film is removed. A gate oxide film (3a) is formed. A gate electrode (9) is formed on the gate oxide film (3a). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, p- well regions (10) are formed.

Abstract: A method of manufacturing a semiconductor device includes forming a first parallel pn layer; depositing a first-conductivity-type first semiconductor layer on a surface of the first parallel pn layer in a step that further includes forming a second parallel pn layer by selectively introducing second-conductivity-type impurities into the first semiconductor layer; and forming first second-conductivity-type impurity regions in positions opposed in a depth direction to regions of the first parallel pn layer in which second-conductivity-type semiconductor regions are formed; and forming a local insulating film on a surface of the first semiconductor layer in a termination structure portion so that an end portion of the local insulating film is positioned on the first second-conductivity-type impurity region, by heating at a low temperature effective to suppress diffusion of the first second-conductivity-type impurity regions.