Abstract: An imaging device includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer that generates a signal charge; a charge accumulator connected to the first electrode to accumulate the signal charge; a first voltage supply circuit connected to the second electrode and that selectively supplies at least two different voltages including a first voltage and a third voltage greater than the first voltage; and a second voltage supply circuit that is connected to the charge accumulator via capacitance and that selectively supplies at least two different voltages including a second voltage and a fourth voltage less than the second voltage, where in a first period in which the first voltage supply circuit supplies the first voltage, the first period being included in an accumulation period for accumulating the signal charge in the charge accumulator, the second voltage supply circuit supplies the second voltage.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer.

Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.

Abstract: An imaging device having pixels, each pixel including: a photoelectric conversion unit including a first electrode, a second electrode, a photoelectric conversion layer between the first and second electrodes, and a hole-blocking layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion unit is applied with a voltage between the first electrode and the second electrode. The photoelectric conversion unit has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. The range from the first voltage to the second voltage includes 0V, and a difference between the first voltage and the second voltage is 0.5 V or more.

Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.

Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

Abstract: An imaging device includes a pixel electrode, a counter electrode, a first quantum dot that includes a first core which generates first signal charge and a first shell, a second quantum dot that includes a second core which generates second signal charge and a second shell. In a case where the potential difference between the pixel electrode and the counter electrode is a first potential difference, the first signal charge does not pass through the first shell and is held in the first core and the second signal charge passes through the second shell and is collected by the pixel electrode. In a case where the potential difference between the pixel electrode and the counter electrode is a second potential difference which is larger than the first potential difference, the first signal charge passes through the first shell and is collected by the pixel electrode.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device including an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and a first transistor one of a source and a drain of which is coupled to the first electrode; and voltage supply circuitry coupled to the other of the source and the drain of the first transistor, the voltage supply circuitry being configured to supply a first voltage in a first period and a second voltage different from the first voltage in a second period different from the first period.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in a first frame. During the first period, pixel signal readout is performed on a first row in the pixel array PA. During the second period, pixel signal readout is performed on a second row in the pixel array PA. Each of the first period and the second period is a high-sensitivity exposure period. The third period is a low-sensitivity exposure period.

Abstract: An imaging device includes: a photoelectric converter that includes first and second electrodes and a photoelectric conversion layer therebetween and that generates signal charge; a capacitor having first and second terminals, the first terminal being connected to the first electrode; a first voltage supply circuit that selectively supplies at least two different voltages to the second electrode; and a second voltage supply circuit that selectively supplies at least two different voltages to the second terminal. In a predetermined period in each frame, when the first voltage supply circuit supplies a first voltage to the second electrode, the second voltage supply circuit supplies a second voltage to the second terminal, and when the first voltage supply circuit supplies a third voltage higher than the first voltage to the second electrode, the second voltage supply circuit supplies a fourth voltage lower than the second voltage to the second terminal.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in one frame. During the first period, pixel signal readout is performed on at least one first row in the pixel array PA. During the second period, pixel signal readout is performed on at least one second row in the pixel array PA. At least one of the at least one first row or the at least one second row includes two rows in the pixel array PA. During the third period, no pixel signal readout is performed on the rows in the pixel array PA. Each of the first period and the second period is one of the high-sensitivity exposure period and the low-sensitivity exposure period. The third period is the other of the high-sensitivity exposure period and the low-sensitivity exposure period.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 ?m or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 ?m or longer and shorter than 1.1 ?m is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 ?m or longer.

Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.

Abstract: An imaging device including a first imaging cell having a first photoelectric converter including a first electrode, a second electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, and a first reset transistor one of a source and a drain of which is coupled to the first electrode; and a second imaging cell having a second photoelectric converter including a third electrode, a fourth electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, and a second reset transistor one of a source and a drain of which is coupled to the third electrode. The imaging device further including a first voltage supply circuitry to supply a first voltage to the first reset transistor; and a second voltage supply circuitry to supply a second voltage different from the first voltage to the second reset transistor.