Abstract: An imaging device includes a pixel including a permittivity modulation element that includes opposite and pixel electrodes and a permittivity modulation structure whose permittivity changes according to the radiation of light, a capacitive element that includes first and second electrodes, and a detection circuit that outputs a signal corresponding to the potential of the pixel electrode. Also provided are a voltage supply circuit that applies first and second voltages in different first and second periods to one of the opposite electrode and the first electrode, and a signal processing circuit that generates a third signal being a difference between a first signal output from the detection circuit in the first period and a second signal output from the detection circuit in the second period. The potential difference between the opposite electrode and the first electrode when the second voltage is applied is less than when the first voltage is applied.

Abstract: An imaging device having pixels, each pixel including: a photoelectric conversion unit including a first electrode, a second electrode, a photoelectric conversion layer between the first and second electrodes, and a hole-blocking layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion unit is applied with a voltage between the first electrode and the second electrode. The photoelectric conversion unit has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. The range from the first voltage to the second voltage includes 0V, and a difference between the first voltage and the second voltage is 0.5 V or more.

Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.

Abstract: A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.

Abstract: An imaging device includes a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and a hole-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit electrically connected to the first electrode. The hole-blocking material has an electron affinity lower than both a work function of the first conducting material and an electron affinity of the first photoelectric conversion material. The photoelectric conversion unit is applied with a voltage between the first and second electrodes, and responsive to the voltage within a range from a first voltage to a second voltage, shows that a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident thereon. A difference between the first voltage and the second voltage is 0.5 V or more.

Abstract: A three-dimensional motion obtaining apparatus includes: a light source; a charge amount obtaining circuit that includes pixels and obtains, for each of the pixels, a first charge amount under a first exposure pattern and a second charge amount under a second exposure pattern having an exposure period that at least partially overlaps an exposure period of the first exposure pattern; and a processor that controls a light emission pattern for the light source, the first exposure pattern, and the second exposure pattern. The processor estimates a distance to a subject for each of the pixels on the basis of the light emission pattern and on the basis of the first charge amount and the second charge amount of each of the pixels obtained by the charge amount obtaining circuit, and estimates an optical flow for each of the pixels on the basis of the first exposure pattern, the second exposure pattern, and the first charge amount and the second charge amount obtained by the charge amount obtaining circuit.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: A photosensor includes: a first electrode; a second electrode; a photoelectric conversion layer that is located between the first and second electrodes and generates electric charges; a first charge blocking layer located between the first electrode and the photoelectric conversion layer; a second charge blocking layer located between the second electrode and the photoelectric conversion layer; a voltage supply circuit that applies a voltage to at least one of the first and second electrodes such that an electric field is generated in the photoelectric conversion layer; and a detection circuit that detects a signal corresponding to a change in capacitance between the first and second electrodes. The first charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the first electrode. The second charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the second electrode.

Abstract: An imaging device including a first imaging cell having a first photoelectric converter including a first electrode, a second electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, and a first reset transistor one of a source and a drain of which is coupled to the first electrode; and a second imaging cell having a second photoelectric converter including a third electrode, a fourth electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, and a second reset transistor one of a source and a drain of which is coupled to the third electrode. The imaging device further including a first voltage supply circuitry to supply a first voltage to the first reset transistor; and a second voltage supply circuitry to supply a second voltage different from the first voltage to the second reset transistor.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: An imaging device including an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and a first transistor one of a source and a drain of which is coupled to the first electrode; and voltage supply circuitry coupled to the other of the source and the drain of the first transistor, the voltage supply circuitry being configured to supply a first voltage in a first period and a second voltage different from the first voltage in a second period different from the first period.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device includes a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and a hole-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit electrically connected to the first electrode. The hole-blocking material has an electron affinity lower than both a work function of the first conducting material and an electron affinity of the first photoelectric conversion material. The photoelectric conversion unit is applied with a voltage between the first and second electrodes, and responsive to the voltage within a range from a first voltage to a second voltage, shows that a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident thereon. A difference between the first voltage and the second voltage is 0.5 V or more.

Abstract: An imaging device of the present disclosure includes: an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric converter generating signal charge by photoelectric conversion, and a charge detection circuit connected to the first electrode, the charge detection circuit detecting the signal charge; a signal line electrically coupled to the first electrode; and a voltage supply circuit selectively supplying a first voltage and a second voltage different from the first voltage to the signal line.

Abstract: An imaging device of the present disclosure includes: a first and second imaging cells each including a photoelectric converter including a pixel electrode, an opposite electrode, and a photoelectric conversion layer between the pixel electrode and the opposite electrode, the photoelectric converter generating signal charge by photoelectric conversion, and charge detection circuit connected to the pixel electrode, the charge detection circuit detecting the signal charge; and a voltage supply circuit supplying a voltage such that, in a frame period, a potential difference between the pixel electrode and the opposite electrode of the first imaging cell at a start time of a charge accumulation period of the first imaging cell is made different from a potential difference between the pixel electrode and the opposite electrode of the second imaging cell at a start time of a charge accumulation period of the second imaging cell.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and an electron-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit connected to the first electrode. The photoelectric converter is adapted to be applied with a voltage between the first and second electrodes. An electron-blocking material in the electron-blocking layer has an ionization potential higher than both a work function of a conducting material in the first electrode and an ionization potential of a photoelectric conversion material in the photoelectric conversion layer, which allows the photoelectric converter to have a range of the voltage within which a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer is substantially equal to that when no light is incident. The range of the voltage is 0.5 V or more.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.