Patents by Inventor Tamotsu Owada

Tamotsu Owada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby
    Publication number: 20030010961
    Abstract: A composition for the formation of an insulating film comprising a low dielectric constant polymeric material and a sublimating material, which are dissolved in a solvent. Preferred low dielectric constant polymeric materials include polyaryl ethers. Preferred sublimating materials include silicone compounds having a closed stereostructure having atoms at its vertexes, such as those known as Si-T8 and Si-T12. A method of forming a low dielectric constant insulating film and electronic parts or components using an insulating film formed thereby are also disclosed.
    Type: Application
    Filed: July 15, 2002
    Publication date: January 16, 2003
    Applicant: FUJITSU LIMITED
    Inventors: Shun-Ichi Fukuyama, Tamotsu Owada, Hiroko Inoue
  • Low dielectric constant film material, film and semiconductor device using such material
    Publication number: 20010033026
    Abstract: A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
    Type: Application
    Filed: March 5, 2001
    Publication date: October 25, 2001
    Applicant: Fujitsu Limited
    Inventors: Yoshihiro Nakata, Shun-ichi Fukuyama, Katsumi Suzuki, Ei Yano, Tamotsu Owada, Iwao Sugiura
  • Excimer laser processing method and apparatus
    Patent number: 5386430
    Abstract: An excimer laser ablation processing for forming via holes in a resin film by irradiation of an excimer laser wherein, the emission of light caused during the decomposition of the resin during the processing is detected, its intensity is measured, and the endpoint of the processing is judged or a comparison is made of the positions of light emission and the design positions for processing to examine for the presence of defects. Provision is made of a means for measuring the intensity and a means for judging the endpoint of the processing from the changes in the intensity of light emission during the processing.
    Type: Grant
    Filed: July 16, 1993
    Date of Patent: January 31, 1995
    Assignee: Fujitsu Limited
    Inventors: Yasuo Yamagishi, Kanae Shimizu, Daisuke Mizutani, Tamotsu Owada, Yoshikatsu Ishizuki, Hideya Hashii
  • Insulating material for wiring substrate and method of producing multi-layered wiring substrate
    Patent number: 5349155
    Abstract: This invention relates to an insulating material for a wiring substrate and to a method of producing a multi-layered wiring substrate, and is directed to put into practical application a multi-layered wiring substrate suitable for processing high speed signals. The production method of the multi-layered wiring substrate of this invention uses an insulating material prepared by allowing voids of a porous perfluorocarbon polymer film to be impregnated with a thermosetting resin containing a benzocyclobutene ring, and thermally setting the resin, and comprises laminating alternately a wiring layer and an insulating layer made of the insulating material for the wiring substrate on a rigid support substrate.
    Type: Grant
    Filed: January 15, 1993
    Date of Patent: September 20, 1994
    Assignee: Fujitsu Limited
    Inventors: Yasuo Yamagishi, Tamotsu Owada