Abstract: Embodiments include apparatuses, methods, and systems associated with save-restore circuitry including metal-ferroelectric-metal (MFM) devices. The save-restore circuitry may be coupled to a bit node and/or bit bar node of a pair of cross-coupled inverters to save the state of the bit node and/or bit bar node when an associated circuit block transitions to a sleep state, and restore the state of the bit node and/or bit bar node when the associated circuit block transitions from the sleep state to an active state. The save-restore circuitry may be used in a flip-flop circuit, a register file circuit, and/or another suitable type of circuit. The save-restore circuitry may include a transmission gate coupled between the bit node (or bit bar node) and an internal node, and an MFM device coupled between the internal node and a plate line. Other embodiments may be described and claimed.

Abstract: An apparatus is provided which comprises: a first Power Management Unit (PMU); and a second PMU, wherein the first PMU is to manage transition of the apparatus from a low power state to a first active state, wherein the second PMU is to manage transition of the apparatus from the first active state to a second active state, and wherein the second PMU is to be powered down while the apparatus is to be in the low power state.

Abstract: One embodiment provides an apparatus. The apparatus includes a pair of nonvolatile resistive random access memory (RRAM) memory cells coupled to a volatile static RAM (SRAM) memory cell. The pair of nonvolatile RRAM memory cells includes a first RRAM memory cell and a second RRAM memory cell. The first RRAM memory cell includes a first resistive memory element coupled to a first bit line, and a first selector transistor coupled between the first resistive memory element and a first output node of the volatile SRAM memory cell. The second RRAM memory cell includes a second resistive memory element coupled to a second bit line, and a second selector transistor coupled between the second resistive memory element and a second output node of the volatile SRAM memory cell.

Abstract: Some embodiments include apparatuses having a first magnet, a first stack of layers coupled to a first portion of the first magnet, a first layer coupled to a second portion of the first magnet, a second magnet, a second stack of layers coupled to a first portion of the second magnet, a second layer coupled to a second portion of the second magnet, a conductor coupled to the first stack of layers and to the second layer, and a conductive path coupled to the first portion of the first magnet and to the first portion of the second magnet, each of the first and second layers including a magnetoelectric material, each of the first and second stacks of layers providing an inverse spin orbit coupling effect.

Abstract: Some embodiments include apparatuses having a first magnet, a first stack of layers coupled to a first portion of the first magnet, a first layer coupled to a second portion of the first magnet, a second magnet, a second stack of layers coupled to a first portion of the second magnet, a second layer coupled to a second portion of the second magnet, a conductor coupled to the first stack of layers and to the second layer, and a conductive path coupled to the first portion of the first magnet and to the first portion of the second magnet, each of the first and second layers including a magnetoelectric material, each of the first and second stacks of layers providing an inverse spin orbit coupling effect.

Abstract: An apparatus is provided which comprises: a first Power Management Unit (PMU); and a second PMU, wherein the first PMU is to manage transition of the apparatus from a low power state to a first active state, wherein the second PMU is to manage transition of the apparatus from the first active state to a second active state, and wherein the second PMU is to be powered down while the apparatus is to be in the low power state.

Abstract: Techniques and mechanisms for providing electrical insulation of a through-substrate interconnect (TI). In an embodiment, the TI extends between a first side of the substrate and a second side of the substrate opposite the first side. The substrate has formed therein a conductive shell structure that extends at least partially around a periphery of the TI. A first dielectric liner structure is disposed between the conductive shell structure and a bulk material of the substrate. A second dielectric liner structure is disposed between the conductive shell structure and the TI. In another embodiment, a voltage of the conductive shell structure is allowed to float while the TI exchanges a signal or a supply voltage.

Abstract: Described is an apparatus to reduce or eliminate imprint charge, wherein the apparatus which comprises: a source line; a bit-line; a memory bit-cell coupled to the source line and the bit-line; a first multiplexer coupled to the bit-line; a second multiplexer coupled to the source-line; a first driver coupled to the first multiplexer; a second driver coupled to the second multiplexer; and a current source coupled to the first and second drivers.

Abstract: An apparatus is provided which comprises a full adder including magnetoelectric material and spin orbit material. In some embodiments, the adder includes: a 3-bit carry generation structure and a multi-bit sum generation structure coupled to the 3-bit carry generation structure. In some embodiments, the 3-bit carry generation structure includes at least three cells comprising magnetoelectric material and spin orbit material, wherein the 3-bit carry generation structure is to perform a minority logic operation on first, second, and third inputs to generate a carry output. In some embodiments, the multi-bit sum generation structure includes at least four cells comprising magnetoelectric material and spin orbit material, wherein the multi-bit sum generation structure is to perform a minority logic operation on the first, second, and third inputs and the carry output to generate a sum output.

Abstract: An apparatus is provided which comprises one or more magnetoelectric spin orbit (MESO) minority gates with different peripheral complementary metal oxide semiconductor (CMOS) circuit techniques in the device layer including: (1) current mirroring, (2) complementary supply voltages, (3) asymmetrical transistor sizing, and (4) using transmission gates. These MESO minority gates use the multi-phase clock to prevent back propagation of current so that MESO gate can correctly process the input data.

Abstract: In one embodiment, an apparatus includes a memory array having a plurality of memory cells, a plurality of bitlines coupled to the plurality of memory cells, and a plurality of wordlines coupled to the plurality of memory cells. The memory array may further include a sense amplifier circuit to sense and amplify a value stored in a memory cell of the plurality of memory cells. The sense amplifier circuit may include: a buffer circuit to store the value, the buffer circuit coupled between a first internal node of the sense amplifier circuit and a second internal node of the sense amplifier circuit; and an equalization circuit to equalize the first internal node and the second internal node while the sense amplifier circuit is decoupled from the memory array. Other embodiments are described and claimed.

Abstract: In one embodiment, an apparatus includes a memory array having a plurality of memory cells, a plurality of bitlines coupled to the plurality of memory cells, and a plurality of wordlines coupled to the plurality of memory cells. The memory array may further include a sense amplifier circuit to sense and amplify a value stored in a memory cell of the plurality of memory cells. The sense amplifier circuit may include: a buffer circuit to store the value, the buffer circuit coupled between a first internal node of the sense amplifier circuit and a second internal node of the sense amplifier circuit; and an equalization circuit to equalize the first internal node and the second internal node while the sense amplifier circuit is decoupled from the memory array. Other embodiments are described and claimed.

Abstract: The present disclosure provides for the management of power of a NZE IoT device. Managing power can include receiving the one or more asynchronous events from the asynchronous event system, determining if any of the one or more asynchronous events meet a respective charge qualification, generating the power-on command for the power-managed compute system if any of the one or more asynchronous events meet the respective charge qualification, and waiting for a power source to reach a threshold associated with the respective charge qualification if any of the one or more asynchronous events do not meet the respective charge qualification.

Abstract: Described is an apparatus which comprises: a first electrical path comprising at least one driver and receiver; and a second electrical path comprising at least one driver and receiver, wherein the first and second electrical paths are to receive a same input signal, wherein the first electrical path and the second electrical path are parallel to one another and have substantially the same propagation delays, and wherein the second electrical path is enabled during a first operation mode and disabled during a second operation mode.

Abstract: A processor includes a processing core and a cache controller including a read queue and a separate write queue. The read queue is to buffer read requests of the processing core to a non-volatile memory, last level cache (NVM-LLC), and the write queue is to buffer write requests to the NVM-LLC. The cache controller is to detect whether the write queue is full. The cache controller further prioritizes a first order of sending requests to the NVM-LLC when the write queue contains an empty slot, the first order specifying a first pattern of sending the read requests before the write requests, and prioritizes a second order of sending requests to the NVM-LLC in response to a determination that the write queue is full, the second order specifying a second pattern of alternating between sending a write request from the write queue and a read request from the read queue.

Abstract: Described is an apparatus which comprises: a first electrical path comprising at least one driver and receiver; and a second electrical path comprising at least one driver and receiver, wherein the first and second electrical paths are to receive a same input signal, wherein the first electrical path and the second electrical path are parallel to one another and have substantially the same propagation delays, and wherein the second electrical path is enabled during a first operation mode and disabled during a second operation mode.

Abstract: An apparatus is provided which comprises: a first Power Management Unit (PMU); and a second PMU, wherein the first PMU is to manage transition of the apparatus from a low power state to a first active state, wherein the second PMU is to manage transition of the apparatus from the first active state to a second active state, and wherein the second PMU is to be powered down while the apparatus is to be in the low power state.

Abstract: Systems, apparatuses and methods may provide for early pre-charge with respect to peak power events. Application performance may improve by pre-charging a supercap just prior to initiating a system wake up from a qualified system wake-source trigger. Additionally, the pre-charging of the supercap may be controlled by a time defined pre-charge period and may also be controlled by a predetermined threshold voltage.

Abstract: Embodiments include apparatuses, methods, and systems associated with save-restore circuitry including metal-ferroelectric-metal (MFM) devices. The save-restore circuitry may be coupled to a bit node and/or bit bar node of a pair of cross-coupled inverters to save the state of the bit node and/or bit bar node when an associated circuit block transitions to a sleep state, and restore the state of the bit node and/or bit bar node when the associated circuit block transitions from the sleep state to an active state. The save-restore circuitry may be used in a flip-flop circuit, a register file circuit, and/or another suitable type of circuit. The save-restore circuitry may include a transmission gate coupled between the bit node (or bit bar node) and an internal node, and an MFM device coupled between the internal node and a plate line. Other embodiments may be described and claimed.

Abstract: Described is an apparatus which comprises: a first electrical path comprising at least one driver and receiver; and a second electrical path comprising at least one driver and receiver, wherein the first and second electrical paths are to receive a same input signal, wherein the first electrical path and the second electrical path are parallel to one another and have substantially the same propagation delays, and wherein the second electrical path is enabled during a first operation mode and disabled during a second operation mode.