Abstract: The present disclosure provides a thermal-stress-pore pressure coupled electromagnetic loading triaxial Hopkinson bar system and test method, the system mainly consists of an electromagnetic pulse generation system, a servo-controlled axial pressure loading system, a servo-controlled confining pressure loading system, a thermal control system, a pore pressure loading system, a bar system, and a data monitoring and acquisition system. Based on the conventional Hopkinson bar, the present disclosure creatively introduces a real-time loading and control system for confining pressure, thermal, and pore pressure, aiming to solve the technical problem that the existing test apparatus cannot be used to study dynamic response of deep rock mass under the coupling effect of thermal-stress-pore pressure and dynamic disturbance during dynamic impact loading.

Abstract: A method is presented for forming a vertical transport field effect transistor (VTFET). The method includes forming a plurality of fins over a substrate, depositing a sacrificial material adjacent the plurality of fins, forming self-aligned spacers adjacent the plurality of fins, removing the sacrificial material to define openings under the self-aligned spacers, filling the openings with bottom spacers, depositing an interlayer dielectric (ILD) after patterning, laterally etching the substrate such that bottom surfaces of the plurality of fins are exposed, the lateral etching defining cavities within the substrate, and filling the cavities with an epitaxial material such that epitaxial regions are defined each having a symmetric tapered shape under a twin-fin structure. The single fin device can be formed through additional patterning and bottom epi under the single fin device that has an asymmetric tapered shape.

Abstract: Disclosed is an open earphone, comprising a sound production component and an ear hook. The ear hook may include a first portion and a second portion connected in sequence. The first portion may be hung between the auricle of a user and the head of the user, the second portion may extend toward a front outer side of the auricle and connect the sound production component, and the sound production component may be located close to the ear canal but not block the opening of the ear canal; wherein the sound production component and the auricle may have a first projection and a second projection on a sagittal plane, respectively, a centroid of the first projection may have a first distance from a highest point of the second projection in a vertical axis direction, a ratio of the first distance to a height of the second projection in the vertical axis direction may be within a range of 0.25-0.

Abstract: Semiconductor devices and methods of forming the same include a semiconductor base having a first width. A semiconductor device over the semiconductor base has a second width that is greater than the first width. A power rail is beneath the semiconductor base. A conductive contact extends from a top of the semiconductor device to the power rail.

Abstract: A semiconductor structure includes a first field-effect transistor having a first back side source/drain contact, a second back side source/drain contact, and a first power line and a first signal line each connected to the first back side source/drain contact and the second back side source/drain contact, respectively. The semiconductor structure further includes a second field-effect transistor vertically stacked above the first field-effect transistor. The second field-effect transistor having a first front side source/drain contact, a second front side source/drain contact, and a first power line and a first signal line each connected to the first front side source/drain contact and the second front side source/drain contact, respectively.

Abstract: A semiconductor device includes a first transistor including a first source/drain region, and a second transistor stacked on the first transistor. The second transistor includes a second source/drain region. The semiconductor device further includes a via structure disposed between a power element and the second source/drain region. The via structure includes a first via disposed on the power element, and a second via disposed on the first via, wherein the second via is angled with respect to the first via.

Abstract: A semiconductor structure includes a first stacked device structure. The first stacked device structure includes a first field-effect transistor disposed on a substrate having a front side and a back side. The first field-effect transistor has a first source/drain region. The first stacked device structure further includes a second field-effect transistor vertically stacked above the first field-effect transistor. The second field-effect transistor has a second source/drain region. The first stacked device structure further includes a first front side source/drain contact disposed on the first source/drain region and a first back side source/drain contact disposed on the second source/drain region. The first stacked device structure further includes a first isolation pillar structure located within the first field-effect transistor, the second field-effect transistor, the first front side source/drain contact and the first back side source/drain contact.

Abstract: An integrated circuit (IC) assembly method is provided. The method includes fabricating a first wafer including a first device with a back end of line (BEOL) and first terminals of first and second types at the BEOL and fabricating a second wafer including a second device for back side power delivery network (BSPDN) processing, second terminals of the first type, first vias and second vias. The first and second wafers are bonded at the BEOL to connect the second terminals of the first type to a subset of the first terminals of the first type, the first vias to remaining first terminals of the first type, and the second vias to the first terminals of the second type. A BSPDN is built onto a backside of the second wafer to include first and second BSPDN terminals connected to the first and second vias, respectively.

Abstract: A uniaxial bidirectional synchronous control electromagnetic loaded dynamic shear test system and method, a test apparatus thereof including a support platform, a loading bar system, an electromagnetic pulse generation system, a servo-controlled normal pressure loading system, and a data monitoring and acquisition system. The test apparatus can be used to conduct a dynamic shear test research on a rock-like material under a constant normal pressure close to an actual operating condition, and can also be applied to carry out dynamic shear tests on intact rock-like test specimens in various sizes or jointed rock-like test specimens containing a single structural surface to study dynamic shear mechanical property and shear failure behavior under strain rate of 101?103 s?1, thereby providing an important theoretical and technical support for the design, construction, protection, and safety and stability evaluation of geotechnical engineering, structural engineering.

Abstract: Distributed storage system and method for transmitting storage-related messages between host computers in a distributed storage system uses a handshake operation of a first-type communication connection between a source data transport daemon of a source host computer and a target data transport daemon of a target host computer to derive a symmetric key at each of the source and target data transport daemons. The two symmetric keys are sent to a source data transport manager of the source host computer and to a target data transport manager of the target host computer. The source and target data transport managers then use the same symmetric keys to encrypt and decrypt storage-related messages that are transmitted from the source data transport manager to the target data transport manager through multiple second-type communication connections between the source and target data transport managers.

Abstract: The present disclosure relates to bootstrapping an encrypted single node VSAN cluster. One method includes receiving a request to create an encrypted VSAN cluster from a single host in a software-defined datacenter, deploying a virtual server on a VSAN datastore of the software-defined datacenter, registering a native key provider (NKP) in the virtual server, creating an empty VSAN cluster encrypted by the NKP, adding the single host to the encrypted empty cluster to create a one-host encrypted cluster, registering a KMIP KMS in the virtual server, switching encryption of the one-host encrypted cluster from the NKP to the KMIP KMS, and adding another host to the one-host encrypted cluster to create the encrypted cluster.

Abstract: A method for chemical upcycling of the resins containing ester bonds is described herein. The method comprises two steps: (1) The resins dissolved into a catalyst-solvent system via a network fragmentation strategy to generate non-crosslinked polymer fragment mixture with functional groups. (2) After introducing additives and reacting for predetermined time, a reconfigurable strong resin and a photocurable resin with repeated recyclability are obtained. The low energy consumption and cost, the high performance and economical value added of the regenerated productions, and the ease implement without changing the commodity products and manufacturing facilities make it attractive and suitable for the recycling of the resin wastes.

Abstract: Distributed storage system and method for transmitting storage-related messages between host computers in a distributed storage system uses a handshake operation of a first-type communication connection between a source data transport daemon of a source host computer and a target data transport daemon of a target host computer to derive a symmetric key at each of the source and target data transport daemons. The two symmetric keys are sent to a source data transport manager of the source host computer and to a target data transport manager of the target host computer. The source and target data transport managers then use the same symmetric keys to encrypt and decrypt storage-related messages that are transmitted from the source data transport manager to the target data transport manager through multiple second-type communication connections between the source and target data transport managers.

Abstract: The present disclosure provides a base station. The base station includes a multi-function board, a radome and at least one antenna element. The radome is configured to cover the multi-function board. The at least one antenna element is provided between the multi-function board and the radome. The multi-function board is configured to integrate with at least two of functions of a radio board, an EMC cover, an AC board, an antenna reflector, and an Antenna board.

Abstract: Example methods and systems to perform a migration of a virtualized computing instance and its first snapshot hierarchy from a first object store to a second object store have been disclosed. One example method includes identifying a first disk chain of the first snapshot hierarchy having an object running point, identifying a second disk chain of the first snapshot hierarchy different from the first disk chain, and migrating the second disk chain from the first object store to the second object store to form a first branch of a second snapshot hierarchy in the second object store. After the migrating, the example method includes instructing to take a first native snapshot on the object running point in the second object store, instructing to revert the object running point along the first branch and migrating the first disk chain from the first object store to the second object store.

Abstract: The present disclosure provides a method to fabricate three-dimensional transparent glass utilizing polymer plasticity, including the following steps. In step 1, synthesize polymer-glass powder composite containing dynamic chemical bonds, the bond exchange catalyst is added during the synthesis process, and then cure to obtain a two-dimensional sheet shape I, the bond exchange catalyst is used to activate a dynamic chemical bond in step 2. In step 2, shape the two-dimensional sheet shape I obtained in step 1 into a complex three-dimensional shape II under the conditions of the effect of an external force and the activable dynamic chemical bond. In step 3, pyrolyze the composite precursor at high temperature to obtain transparent glass with complex three-dimensional shape II. The present disclosure provides a method in shaping the transparent glass with complex geometries by unique polymer plasticity in lower temperature.

Abstract: The present disclosure provides an integrated flywheel with shared cylinders and a manufacturing method therefor, comprising gear rings and support portions comprising a plurality of bridge portions with a spoke and a cylinder. Between adjacent bridge portions, the first spoke overlaps one end of a cylinder on a next-stage support portion to form a first overlap joint, one end of the first cylinder overlaps an inner side of the first spoke, and the other end of the first cylinder overlaps and is fixed with an outer side of the second spoke to form a second overlap joint. A first gear ring with a greater diameter is fixed at the first overlap joints, and a third gear ring with a less diameter is fixed at the second overlap joints. The integrated flywheel has advantages of low mass, good manufacturability and high production efficiency.

Abstract: A fabrication method and application of topological elastomers with highly branched structures, low modulus and high elasticity. The topological elastomers comprise dendritic macromolecules. The fabrication method includes direct crosslinking, post-crosslinking, grafting, and copolymerization. The performance of the elastomer can be easily tuned via changing the topology of the polymer network. The breakthrough of this invention lies in that these topological elastomers with highly branched structures are having low modulus and high elasticity, which would expand its application in the field of elastomer. Notably, the variety of topological elastomers, the versatility of curing chemistries, the availability of a wide variety of monomers, and the various polymerization methods are enabling the fabrication of topological elastomers with feasibility and efficiency.

Abstract: Computing systems and computer-implemented methods for removing brain stimulation artifacts in neural signals are disclosed. The method makes use of a matching pursuit algorithm to accurately extract the stimulation artifact. The disclosed method removes the stimulation artifact associated with individual stimulation pulses without needing additional information from previous stimulation pulses or other electrodes. The disclosed method is compatible for use with various stimulation frequencies, does not need any filtering, and can recover neural signals almost immediately after stimulation. The disclosed method is compatible for use in has great potential in closed-loop systems used in various neurological diagnostic and therapeutic procedures.