Abstract: A chip type solid electrolytic capacitor includes a capacitor element-laminate. In the capacitor element-laminate, a plurality of capacitor elements, each having an anode portion and a cathode portion, are laminated so that the anode portions of the adjacent capacitor elements are disposed in the direction opposite to each other. Anode lead terminals are joined to the bottom faces of the anode portions of the capacitor elements disposed at both ends of the capacitor element-laminate. A cathode lead terminal is joined to the bottom face of the cathode portion of the capacitor element disposed in the center of the capacitor element-laminate. An Electrically insulating exterior resin coats the capacitor element-laminate so as to expose at least a part of the bottom faces of the anode lead terminals and a part of the cathode lead terminal.

Abstract: A chip type solid electrolytic capacitor includes a capacitor element-laminate. In the capacitor element-laminate, a plurality of capacitor elements, each having an anode portion and a cathode portion, are laminated so that the anode portions of the adjacent capacitor elements are disposed in the direction opposite to each other. Anode lead terminals are joined to the bottom faces of the anode portions of the capacitor elements disposed at both ends of the capacitor element-laminate. A cathode lead terminal is joined to the bottom face of the cathode portion of the capacitor element disposed in the center of the capacitor element-laminate. An Electrically insulating exterior resin coats the capacitor element-laminate so as to expose at least a part of the bottom faces of the anode lead terminals and a part of the cathode lead terminal.

Abstract: A method for producing a silicon wafer for epitaxial substrate which includes a first step of performing thermal oxidization on a silicon wafer containing boron atoms no less than 1E19 atoms/cm3, thereby forming a silicon oxide film on the surface of the silicon wafer, a second step of peeling off the silicon oxide film, and a third step of performing heat treatment on the silicon wafer in a hydrogen atmosphere.

Abstract: A chip type solid electrolytic capacitor includes a capacitor element-laminate. In the capacitor element-laminate, a plurality of capacitor elements, each having an anode portion and a cathode portion, are laminated so that the anode portions of the adjacent capacitor elements are disposed in the direction opposite to each other. Anode lead terminals are joined to the bottom faces of the anode portions of the capacitor elements disposed at both ends of the capacitor element-laminate. A cathode lead terminal is joined to the bottom face of the cathode portion of the capacitor element disposed in the center of the capacitor element-laminate. An Electrically insulating exterior resin coats the capacitor element-laminate so as to expose at least a part of the bottom faces of the anode lead terminals and a part of the cathode lead terminal.

Abstract: A capacitor includes a first capacitor element and a second capacitor element laminated on this first capacitor element. The first capacitor element is a solid electrolytic capacitor including a through-hole electrode penetrating a valve metal sheet and having one surface on which cathode and anode terminal portions are taken out. The second capacitor element has first and second electrodes which are provided via a dielectric layer, and second through-hole electrodes penetrating the dielectric layer. The second through-hole electrodes are coupled to the first electrode and insulated from the second electrode. Lead-out portions of the second electrodes are exposed from the dielectric layer. The second through-hole electrodes and the lead-out portions are disposed alternately. The first electrode is electrically coupled to the first through-hole electrode and the second electrode is electrically coupled to the valve metal sheet.

Abstract: An isothermal transportation container comprises an insulating container and a lid that can seal this insulating container. The insulating container has a plurality of insulating materials arranged overlapped on the inner peripheral face of the insulating container. A thermal conductive member is arranged in a space of the insulating container formed by the insulating materials. The thermal conductive member can accommodate a plurality of laminated packaging containers, each of which accommodates a thermal storage medium and a transported article. The heat in the thermal storage medium in one packaging container can be transmitted to the other packaging container through the thermal conductive member.

Abstract: A solid electrolytic capacitor includes a flat-shaped anode terminal having a first surface connected to an anode portion of a capacitor element and having a second surface opposite to the first surface, a flat-shaped cathode terminal having a first surface connected to a cathode layer of the capacitor element and having a second surface opposite to the first surface thereof, and an insulating resin package accommodating the capacitor element, the anode terminal, and the cathode terminal. The second surface of the cathode terminal is flush with the second surface of the anode terminal. The second surface of the anode terminal and the second surface of the cathode terminal expose to an outside of the resin package. The anode terminal includes a first thick portion and a first thin portion thinner than the first thick portion. The first thick portion has the second surface of the anode terminal and a portion of the first surface of the anode terminal.

Abstract: A capacitor includes a first capacitor element and a second capacitor element laminated on this first capacitor element. The first capacitor element is a solid electrolytic capacitor including a through-hole electrode penetrating a valve metal sheet and having one surface on which cathode and anode terminal portions are taken out. The second capacitor element has first and second electrodes which are provided via a dielectric layer, and second through-hole electrodes penetrating the dielectric layer. The second through-hole electrodes are coupled to the first electrode and insulated from the second electrode. Lead-out portions of the second electrodes are exposed from the dielectric layer. The second through-hole electrodes and the lead-out portions are disposed alternately. The first electrode is electrically coupled to the first through-hole electrode and the second electrode is electrically coupled to the valve metal sheet.

Abstract: A SiC-hexagonal ferrite type ceramic composite electromagnetic wave absorber for a high-frequency band, the electromagnetic wave absorber characterized by being composed of a composite sintered product of a hexagonal ferrite and SiC. The electromagnetic wave absorber is produced by a method including the steps of incorporating 1 to 5 percent by weight of SiC powder or fiber into a hexagonal ferrite together with a sintering additive, followed by molding and, thereafter, conducting sintering at 700° C. to 900° C., or a method including the steps of incorporating 1 to 5 percent by weight of curing-treated SiC precursor into a hexagonal ferrite, followed by molding and, thereafter, conducting sintering.

Abstract: The present invention provides a Y-type hexagonal ferrite thin film suitable for high frequency devices, having a crystal structure with the c-axis oriented perpendicular to the surface of the thin film. The present invention also provides a method of producing the Y-type hexagonal ferrite thin film, comprising the steps of preparing a viscous solution containing a metal-organic complex which is formed using a primary component including a Fe+3 ion, and a secondary component including a Ba2+ ion, at least one transition metal ion selected from the group consisting of Fe2+, Co2+, Ni2+, Zn2+, Cu2+ and Mn2+; and optionally at least one metal ion selected from the group consisting of Sr2+, Ca2+ and Pb2+, forming a film having a Y-type ferrite composition on a surface made of noble metal through a coating process using the viscous solution, and burning the film at a temperature of 750° C. or more.

Abstract: The present invention provides a Y-type hexagonal ferrite thin film suitable for high frequency devices, having a crystal structure with the c-axis oriented perpendicular to the surface of the thin film. The present invention also provides a method of producing the Y-type hexagonal ferrite thin film, comprising the steps of preparing a viscous solution containing a metal-organic complex which is formed using a primary component including a Fe+3 ion, and a secondary component including a Ba2+ ion, at least one transition metal ion selected from the group consisting of Fe2+, Co2+, Ni2+, Zn2+, Cu2+ and Mn2+; and optionally at least one metal ion selected from the group consisting of Sr2+, Ca2+ and Pb2+, forming a film having a Y-type ferrite composition on a surface made of noble metal through a coating process using the viscous solution, and burning the film at a temperature of 750° C. or more.

Abstract: An isothermal transportation container comprises an insulating container and a lid that can seal this insulating container. The insulating container has a plurality of insulating materials arranged overlapped on the inner peripheral face of the insulating container. A thermal conductive member is arranged in a space of the insulating container formed by the insulating materials. The thermal conductive member can accommodate a plurality of laminated packaging containers, each of which accommodates a thermal storage medium and a transported article. The heat in the thermal storage medium in one packaging container can be transmitted to the other packaging container through the thermal conductive member.

Abstract: A chip solid electrolytic capacitor includes a capacitor element with an anode portion and a cathode portion, an anode lead frame, a cathode lead frame and packaging resin. The anode lead frame includes a first plane, an anode junction and an anode terminal. The anode junction is formed on one end of the first plane and connected to the anode portion. The anode terminal is formed on the other side of the first plane. The cathode lead frame has a second plane and a cathode terminal. The second plane has the cathode portion mounted thereon, is connected to the cathode portion, and is stacked on the first plane. The cathode terminal is formed on the same side of the second plane as the anode terminal. The packaging resin has a surface to be mounted and covers the capacitor element, with the anode terminal and the cathode terminal exposed on the surface to be mounted.

Abstract: The chip solid electrolytic capacitor includes a capacitor element with an anode portion and a cathode portion, an anode lead frame, a cathode lead frame and packaging resin. The anode lead frame includes a first plane, an anode junction and an anode terminal. The anode junction is formed on one end of the first plane and connected to the anode portion. The anode terminal is formed on the other side of the first plane. The cathode lead frame has a second plane and a cathode terminal. The second plane mounts the cathode portion thereon and connected to the cathode portion, and is stacked on the first plane. The cathode terminal is formed on the same side of the second plane as the anode terminal. The packaging resin has a surface to be mounted and covers the capacitor element, with the anode terminal and the cathode terminal exposed on the surface to be mounted.

Abstract: A solid electrolytic capacitor includes a valve metal sheet having a porous portion on one side of the sheet, a dielectric layer formed on the porous portion, a solid electrolyte layer formed on the dielectric layer, a collector layer formed on the solid electrolyte layer, a through-hole electrode connected to the collector layer and penetrating the valve metal sheet to be exposed to the other side of the sheet, and an electrode terminal insulated from the through-hole electrode and connected to the valve metal sheet. The capacitor further includes an insulating portion penetrating the valve metal sheet and a penetration electrode penetrating the insulating portion. The solid electrolytic capacitor has a large capacitance and an excellent radio frequency response, and can be easily mounted on a semiconductor device.

Abstract: A turbine generating apparatus includes a control unit which controls the turbine generating apparatus as follows. During a system connection running mode, a fuel is fed to the gas turbine at a fuel flow rate corresponding to a preset load. The converter prepares a pseudo-system in which a frequency conforms to a set rotational speed of the gas turbine at the preset load, and converts an output of the generator to a direct current in a state that a number of revolutions of the gas turbine is specified by operating the generator synchronously with the pseudo-system. A power to be taken out is controlled depending on a magnitude of a turbine output. The inverter converts a DC voltage output from the converter to an AC voltage by a pulse width modulation at a system voltage and a system frequency so as to keep the DC voltage output from the converter at a predetermined voltage.

Abstract: A solid electrolytic capacitor includes a valve metal sheet having a porous portion on one side of the sheet, a dielectric layer formed on the porous portion, a solid electrolyte layer formed on the dielectric layer, a collector layer formed on the solid electrolyte layer, a through-hole electrode connected to the collector layer and penetrating the valve metal sheet to be exposed to the other side of the sheet, and an electrode terminal insulated from the through-hole electrode and connected to the valve metal sheet. The capacitor further includes an insulating portion penetrating the valve metal sheet and a penetration electrode penetrating the insulating portion. The solid electrolytic capacitor has a large capacitance and an excellent radio frequency response, and can be easily mounted on a semiconductor device.

Abstract: A method for manufacturing large capacitance solid electrolytic capacitors that can be connected direct with semiconductor component, and offer a superior high frequency characteristic. An aluminum foil 3 is made porous in one of the surfaces, a dielectric layer 2 is formed on the porous portion, a through hole 4 is provided in the aluminum foil 3 at a certain specific location. An insulation layer 5 is formed to cover the other surface, viz. non-porous surface, of the aluminum foil 3 and the inner wall surface of through hole 4, a solid electrolytic layer 6 is provided on the dielectric layer 2, and a through hole electrode 7 is formed in the through hole 4, and then a collector layer 8 is formed on the solid electrolytic layer 6. The insulation layer 5 disposed on aluminum foil 3 is provided with an opening 9 at a certain specific location, and a connection terminal 10 is provided at the opening 9 of insulation layer 5 and the exposed surface of the through hole electrode 7, respectively.

Abstract: A method for manufacturing solid electrolytic capacitor that can be mounted direct on a semiconductor component and offers a superior high frequency characteristic. An aluminum foil 20 is provided on one surface with a resist film 23 and then with a through hole 24. Next, an insulation film 25 is formed to cover the other surface of aluminum foil 20 and to fill the first through hole, and then the resist film 23 is removed; and then the surface of aluminum foil 20 is roughened to be provided with a dielectric layer 27 thereon. A second through hole 36 is formed in the insulation film 25, which is filling the first through hole 24. A through hole electrode 28 is formed in the second through hole; and then, on the surface of the dielectric layer 27, a solid electrolytic layer 29 and a collector layer 30 are formed. After an opening 37 is provided, a first connection terminal 31 is formed therein, and a second connection electrode 32 on the exposed surface of the through hole electrode 28.

Abstract: A method of manufacturing aluminum-substituted hematite represented by ?-(Fe1-xAlx)2O3 where x=0.01 to 0.15, by mixing an iron compound and an aluminum compound such that an atomic ratio of Fe to Al falls within the range of 99:1 to 85:15, adding citric acid and ethylene glycol to the mixture of the iron compound and aluminum compound to produce a gel, and pyrolyzing the gel, followed by calcining the pyrolyzed product.