Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure that includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the entire first magnetic layer exhibits a parallel or antiparallel magnetization direction to the second magnetic layer, and has an anisotropic magnetic field Hk_film within a range from ?1 kOe to +1 kOe.

Abstract: According to one embodiment, a semiconductor memory device includes the following configuration. A resistance change element has first, second and third magnetic layers and a non-magnetic layer disposed between the first and second magnetic layers, and a metal layer disposed between the second and third magnetic layers. An SAF structure is comprised of the second magnetic layer, the metal layer and the third magnetic layer. A write circuit applies a first voltage and a second voltage having reversed polarity of the first voltage to the resistance change element in a write operation in which the resistance change element is changed from a low-resistance state to a high-resistance state.

Abstract: An optical fiber, used in a laser device, propagates light having a wavelength of 1060 nm through a core in at least an LP01 mode and an LP11 mode. A difference between a propagation constant of light in the LP01 mode and a propagation constant of light in the LP11 mode is 1850 rad/m or more and 4000 rad/m or less.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure that includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the entire first magnetic layer exhibits a parallel or antiparallel magnetization direction to the second magnetic layer, and has an anisotropic magnetic field Hk_film within a range from ?1 kOe to +1 kOe.

Abstract: According to one embodiment, a memory includes a first MTJ element having a first area along a first plane; and second MTJ elements each having a second area along the first plane. The second area is larger than or equal to twice the first area and smaller than or equal to five times the first area. Each of the second MTJ elements includes a first ferromagnet, a second ferromagnet, and a first nonmagnet. Respective magnetizations of respective first ferromagnets of the second MTJ elements are oriented along a first direction. Respective magnetizations of respective second ferromagnets of the second MTJ elements are oriented along a second direction. One of the second MTJ elements is coupled to another one of the second MTJ elements in series or in parallel.

Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a scurrent level of the second pulse is different from a current level of the first pulse.

Abstract: According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.

Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.

Abstract: A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.

Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

Abstract: A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf).

Abstract: According to one embodiment, a semiconductor memory device includes the following configuration. A resistance change element has first, second and third magnetic layers and a non-magnetic layer disposed between the first and second magnetic layers, and a metal layer disposed between the second and third magnetic layers. An SAF structure is comprised of the second magnetic layer, the metal layer and the third magnetic layer. A write circuit applies a first voltage and a second voltage having reversed polarity of the first voltage to the resistance change element in a write operation in which the resistance change element is changed from a low-resistance state to a high-resistance state.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).

Abstract: According to one embodiment, a memory includes a first MTJ element having a first area along a first plane; and second MTJ elements each having a second area along the first plane. The second area is larger than or equal to twice the first area and smaller than or equal to five times the first area. Each of the second MTJ elements includes a first ferromagnet, a second ferromagnet, and a first nonmagnet. Respective magnetizations of respective first ferromagnets of the second MTJ elements are oriented along a first direction. Respective magnetizations of respective second ferromagnets of the second MTJ elements are oriented along a second direction. One of the second MTJ elements is coupled to another one of the second MTJ elements in series or in parallel.

Abstract: Provided is an optical coupler configured to cause an NA of light, which exits a taper fiber, to be smaller as compared with a conventional optical coupler. A taper fiber has a high refractive index part which is provided inside a core of the taper fiber and which has a refractive index smaller than a refractive index ncore of the core. An exit end surface of each GI fiber is bonded to an entrance end surface of the taper fiber so that at least a part of the exit end surface of the each GI fiber overlaps with a section of the high refractive index part. A relative refractive index difference of the taper fiber is smaller than 0.076%.

Abstract: An optical fiber includes a core and a cladding surrounding an outer periphery of the core and has a refractive index profile in which a relative refractive index difference with respect to a distance r from a center of the core is represented by ?(r), where a value of A represented by A=??00.22MFD1.31(?(r)??ref(r))dr+?0.22MFD1.310.44MFD1.31(?(r)??ref(r))dr??(Formula 1) is 0.3%·?m or less, where a unit of r is ?m, a unit of a relative refractive index difference ?(r) is %, ?ref(r)=?0.064r+0.494, and MFD1.31 is a mode field diameter at a wavelength of 1.31 ?m.

Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.

Abstract: According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.

Abstract: An optical fiber includes a core and a cladding surrounding an outer periphery of the core and has a refractive index profile in which a relative refractive index difference with respect to a distance r from a center of the core is represented by ?(r), where a value of A represented by A=??00.22MFD1.31(?(r)??ref(r))dr+?0.22MFD1.310.44MFD1.31(?(r)??ref(r))dr??(Formula 1) is 0.3%·?m or less, where a unit of r is ?m, a unit of a relative refractive index difference ?(r) is %, ?ref(r)=?0.064r+0.494, and MFD1.31 is a mode field diameter at a wavelength of 1.31 ?m.