Patents by Inventor Tatsuya Kishi

Tatsuya Kishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD OF THE SAME
    Publication number: 20130313506
    Abstract: A magnetoresistive element has a magnetic layer, an insulating layer and a magnetic layer, which are laminated on a base electrode, and side walls of the magnetic layers that are formed when the magnetic layers are processed. At least one element selected from the group of consisting He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is injected into the side walls and edge portions of the magnetic layers to improve the magnetic characteristics of the first and second magnetic layers.
    Type: Application
    Filed: February 26, 2013
    Publication date: November 28, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Akiyuki MURAYAMA, Masahiko NAKAYAMA, Satoshi SETO, Tatsuya KISHI, Masaru TOKO
  • Magnetic memory including a magnetoresistive element
    Patent number: 8530987
    Abstract: A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: September 10, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisanori Aikawa, Tadashi Kai, Masahiko Nakayama, Sumio Ikegawa, Naoharu Shimomura, Eiji Kitagawa, Tatsuya Kishi, Jyunichi Ozeki, Hiroaki Yoda, Satoshi Yanagi
  • MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    Publication number: 20130099338
    Abstract: According to one embodiment, a magnetic memory element includes a memory layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a first nonmagnetic layer provided on the memory layer, and a reference layer provided on the first nonmagnetic layer, having magnetic anisotropy perpendicular to a film surface, and having an invariable magnetization direction. An area of the memory layer is larger than that of the reference layer. Magnetization in an end portion of the memory layer is smaller than that in a central portion of the memory layer.
    Type: Application
    Filed: September 5, 2012
    Publication date: April 25, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masahiko Nakayama, Tatsuya Kishi, Hiroaki Yoda, Hisanori Aikawa, Masaru Toko
  • MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    Publication number: 20130099337
    Abstract: According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.
    Type: Application
    Filed: September 5, 2012
    Publication date: April 25, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masahiko Nakayama, Hisanori Aikawa, Masaru Toko, Hiroaki Yoda, Tatsuya Kishi, Sumio Ikegawa
  • MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, AND INTEGRATED CIRCUIT
    Publication number: 20130077388
    Abstract: One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
    Type: Application
    Filed: June 26, 2012
    Publication date: March 28, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Hideyuki Sugiyama, Masahiko Nakayama, Tatsuya Kishi, Hiroaki Yoda, Yoshiaki Saito
  • MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF
    Publication number: 20130069184
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 21, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hisanori AIKAWA, Hiroaki YODA, Masahiko NAKAYAMA, Tatsuya KISHI, Sumio IKEGAWA
  • MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20130069186
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 21, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaru TOKO, Masahiko NAKAYAMA, Akihiro NITAYAMA, Tatsuya KISHI, Hisanori AIKAWA, Hiroaki YODA
  • Magnetoresistive effect element and magnetic random access memory
    Patent number: 8378437
    Abstract: A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
    Type: Grant
    Filed: October 9, 2008
    Date of Patent: February 19, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masahiko Nakayama, Kay Yakushiji, Sumio Ikegawa, Shinji Yuasa, Tadashi Kai, Toshihiko Nagase, Minoru Amano, Hisanori Aikawa, Tatsuya Kishi, Hiroaki Yoda
  • Magnetoresistive element
    Patent number: 8363462
    Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6?At)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: January 29, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Hiroaki Yoda
  • MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20130001652
    Abstract: According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.
    Type: Application
    Filed: March 23, 2012
    Publication date: January 3, 2013
    Inventors: Masatoshi Yoshikawa, Satoshi Seto, Hideaki Harakawa, Jyunichi Ozeki, Tatsuya Kishi, Keiji Hosotani
  • Magnetoresistive element and magnetic memory
    Patent number: 8299552
    Abstract: A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: October 30, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Katsuya Nishiyama, Tadaomi Daibou, Tatsuya Kishi, Hiroaki Yoda
  • Magnetoresistance effect element and magnetic random access memory
    Patent number: 8279663
    Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers.
    Type: Grant
    Filed: July 18, 2011
    Date of Patent: October 2, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masahiko Nakayama, Tadashi Kai, Sumio Ikegawa, Hiroaki Yoda, Tatsuya Kishi
  • MAGNETIC MEMORY
    Publication number: 20120241884
    Abstract: According to one embodiment, a magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
    Type: Application
    Filed: March 28, 2012
    Publication date: September 27, 2012
    Inventors: Hisanori AIKAWA, Tadashi Kai, Masahiko Nakayama, Sumio Ikegawa, Naoharu Shimomura, Eiji Kitagawa, Tatsuya Kishi, Jyunichi Ozeki, Hiroaki Yoda, Satoshi Yanagi
  • Magnetoresistive effect device and magnetic memory
    Patent number: 8223533
    Abstract: A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: July 17, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jyunichi Ozeki, Naoharu Shimomura, Sumio Ikegawa, Tadashi Kai, Masahiko Nakayama, Hisanori Aikawa, Tatsuya Kishi, Hiroaki Yoda, Eiji Kitagawa, Masatoshi Yoshikawa
  • Magnetoresistive element and magnetic memory
    Patent number: 8218355
    Abstract: A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ? is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |?{square root over (2)}×a1/2?a2|/a2<b×{ln (hc/b)+1}/{2?×hc×(1+?)}.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: July 10, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Masatoshi Yoshikawa, Toshihiko Nagase, Tadaomi Daibou, Makoto Nagamine, Katsuya Nishiyama, Tatsuya Kishi, Hiroaki Yoda
  • MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    Publication number: 20120088125
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Application
    Filed: September 19, 2011
    Publication date: April 12, 2012
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, KABUSHIKI KAISHA TOSHIBA
    Inventors: Katsuya NISHIYAMA, Wu Feng, Chunlan Feng, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine
  • Magnetoresistive element and magnetoresistive random access memory including the same
    Patent number: 8154915
    Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: April 10, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
  • Spin memory and spin transistor
    Patent number: 8139403
    Abstract: Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: March 20, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Hideyuki Sugiyama, Hisanori Aikawa, Masahiko Nakayama, Tatsuya Kishi, Hiroaki Yoda, Yoshiaki Saito
  • Magnetoresistive element and magnetoresistive random access memory including the same
    Patent number: 8139405
    Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: March 20, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
  • Magnetoresistive element and magnetic memory
    Patent number: 8098514
    Abstract: A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: January 17, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihiko Nagase, Katsuya Nishiyama, Tadashi Kai, Masahiko Nakayama, Makoto Nagamine, Minoru Amano, Masatoshi Yoshikawa, Tatsuya Kishi, Hiroaki Yoda