Abstract: A semiconductor device storing data as a multilevel potential is provided. The semiconductor device includes a memory cell, first and second reference cells, first and second sense amplifiers, and first to third circuits. The first circuit has a function of outputting, to a first wiring and a third wiring, a first potential corresponding to a first signal output from the memory cell. The second circuit has a function of outputting, to a second wiring, a first reference potential corresponding to a second signal output from the first reference cell. The third circuit has a function of outputting, to the fourth wiring, a second reference potential corresponding to a third signal output from the second reference cell when a second switch is in an off state. The first sense amplifier refers to the first potential and the first reference potential and changes potentials of the first wiring and the second wiring.

Abstract: A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a second gate, and in a period during which the memory cell retains data, negative potentials are applied to the first gate and the second gate of the transistor.

Abstract: A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.

Abstract: A display apparatus that can display a high-resolution image can be provided. In the display apparatus, a first layer and a second layer are stacked. In the first layer, an arithmetic circuit and a data driver circuit and are provided, and in the second layer, a display portion is provided. In the arithmetic circuit, a neural network is configured. The display portion has a region overlapping with the data driver circuit. The arithmetic circuit has a function of performing arithmetic processing using the neural network on image data and supplying the arithmetically-processed image data to the data driver circuit.

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a first substrate provided with a first peripheral circuit having a function of driving a first memory cell and a first memory cell layer including a second substrate and a first element layer including the first memory cell. The first memory cell includes a first transistor and a first capacitor. The first transistor includes a semiconductor layer including a metal oxide in its channel formation region. The first memory cell layer is provided to be stacked over the first substrate in a direction perpendicular or substantially perpendicular to a surface of the first substrate. The second substrate includes a circuit for performing writing of data to or reading of data from the first memory cell. The first peripheral circuit and the first memory cell are electrically connected to each other through a first through electrode provided in the second substrate and the first element layer.

Abstract: A novel semiconductor device is provided. The semiconductor device includes a driver circuit and a first transistor layer to a third transistor layer. The first transistor layer includes a first memory cell including a first transistor and a first capacitor. The second transistor layer includes a second memory cell including a second transistor and a second capacitor. The third transistor layer includes a switching circuit and an amplifier circuit. The first transistor is electrically connected to a first local bit line. The second transistor is electrically connected to a second local bit line. The switching circuit has a function of selecting the first local bit line or the second local bit line and electrically connecting the selected local bit line to the amplifier circuit. The first transistor layer to the third transistor layer are provided over the silicon substrate. The third transistor layer is provided between the first transistor layer and the second transistor layer.

Abstract: A novel memory device is provided. The memory device includes a plurality of first wirings extending in a first direction, a plurality of memory element groups, and an oxide layer extending along a side surface of the first wiring. Each of the memory element groups includes a plurality of memory elements. Each of the memory elements includes a first transistor and a capacitor. A gate electrode of the first transistor is electrically connected to the first wiring. The oxide layer includes a region in contact with a semiconductor layer of the first transistor. A second transistor is provided between the adjacent memory element groups. A high power supply potential is supplied to one or both of a source electrode and a drain electrode of the second transistor.

Abstract: An object of one embodiment of the present invention is to provide a novel display device or a display system. Another object of one embodiment of the present invention is to provide a display device or a display system which can be manufactured at low cost and can provide various functions to a user. A pixel includes light-emitting elements whose emission colors are different from each other, a light-emitting element IR, a light-receiving element PS, and an infrared light sensor IRS. An image of a fundus of an eye is captured using the light-emitting element emitting an infrared light as a light source, and imaging is performed by the light-receiving element IRS. A substrate of a display panel is manufactured using a single crystal Si substrate capable of microfabrication and higher integration.

Abstract: A novel semiconductor device is provided. The semiconductor device includes a driver circuit including a plurality of transistors using a silicon substrate for channels, and a first transistor layer and a second transistor layer including a plurality of transistors using a metal oxide for channels. The first transistor layer and the second transistor layer are provided over the silicon substrate layer. The first transistor layer includes a first memory cell including a first transistor and a first capacitor. The first transistor is electrically connected to a first local bit line. The second transistor layer includes a second transistor whose gate is electrically connected to the first local bit line and a first correction circuit electrically connected to the second transistor. The first correction circuit is electrically connected to a first global bit line.

Abstract: A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.

Abstract: A high-resolution display device in which delay of input signals to pixels is reduced is provided. In the display device, a first layer, a second layer, and a third layer are formed in this order from the bottom. The first layer includes a driver circuit and a plurality of first wirings, the second layer includes a plurality of first contact portions, and the third layer includes a pixel array and a plurality of second wirings. The pixel array includes a plurality of pixel circuits. The plurality of second wirings are parallel to each other and extended in the column direction of the pixel array, and the plurality of pixel circuits are electrically connected to the plurality of second wirings. The driver circuit includes a plurality of output terminals positioned along a first direction. The plurality of first wirings are extended perpendicular to the first direction, and the plurality of output terminals are electrically connected to the plurality of first wirings.

Abstract: A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer; a light-emitting element and a first conductive layer over the first insulating layer; a first layer over the first conductive layer; a second conductive layer over the first layer; a second insulating layer over the light-emitting element, the second conductive layer, and the first insulating layer; and a third conductive layer over the second insulating layer. The light-emitting element includes a fourth conductive layer, a second layer over the fourth conductive layer, a third layer over the second layer, and a fifth conductive layer over the third layer.

Abstract: A high-resolution or high-definition display device is provided.

Abstract: A novel display device is provided. The display device includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are provided in different layers. The first layer includes a driver circuit and a functional circuit. The second layer includes a pixel circuit. The third layer includes a display element. The pixel circuit has a function of controlling light emission of the display element. The driver circuit has a function of controlling the pixel circuit. The functional circuit has a function of controlling the driver circuit. The first layer includes a first transistor with a semiconductor layer containing silicon in a channel formation region. The second layer includes a second transistor with a semiconductor layer containing a metal oxide in a channel formation region.

Abstract: A highly reliable memory device is provided. The memory device includes a memory control unit that includes an input/output unit, a control unit, and a first management unit and a memory unit that includes a plurality of memory blocks. The first management unit includes a plurality of first memory elements, the control unit has a function of converting an address input through the input/output unit to an address of the memory block corresponding to the address, with use of a first management table retained in the plurality of first memory elements, and the first memory elements each include a ferroelectric. The control portion may include a function of not using a defective memory cell and may have a function of performing error correction of readout data.

Abstract: In a memory cell including a ferroelectric capacitor, data is read without data destruction. When the reading operation is performed in the memory cell including the ferroelectric capacitor, voltage applied to the counter electrode of the ferroelectric capacitor is gradually increased so as not to cause polarization destruction in the ferroelectric capacitor. A first reading operation from the memory cell is performed by applying a first voltage that does not cause polarization inversion of the ferroelectric layer to the capacitor, a second reading operation from the memory cell is performed by applying a second voltage that does not cause polarization inversion of the ferroelectric layer to the capacitor, and the second voltage is higher than the first voltage.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a memory cell including a first ferroelectric capacitor and a reference memory cell including a second ferroelectric capacitor. In a first period, first binary data is written to the memory cell, and first reference binary data is written to the reference memory cell. In a second period, the first binary data is read from the memory cell, and the first reference binary data is read from the reference memory cell. In a third period, logic operation of the first binary data and the first reference binary data is performed. In a fourth period, second binary data is written to the memory cell, and second reference binary data is written to the reference memory cell. A value of the first binary data and a value of the second binary data are different from each other, and a value of the first reference binary data and a value of the second reference binary data are different from each other.

Abstract: A novel display apparatus is provided. The display apparatus includes a display portion and a peripheral circuit for driving the display portion, and the display portion is provided to overlap with and above the peripheral circuit. The display portion include a plurality of pixels arranged in a matrix, and the plurality of pixels each have a function of emitting light. The peripheral circuit includes a first transistor, and the pixel includes a second transistor. A semiconductor layer included in the first transistor and a semiconductor layer included in the second transistor are formed using materials having different compositions.

Abstract: A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a plurality of memory cells each including a transistor and a capacitor, and capacitors included in adjacent memory cells are provided to overlap with each other. A first capacitor included in a first memory cell is provided so as to partly overlap with a second memory cell adjacent to the first memory cell. A second capacitor included in a second memory cell and the first capacitor are provided over different layers. The second capacitor is provided so as to partly overlap with the first memory cell. The first capacitor and the second capacitor include a region where they overlap with each other. The first and second capacitors include a ferroelectric. The ferroelectric preferably includes hafnium, zirconium, or at least one element selected from Group III-V elements. The transistor preferably includes an oxide semiconductor in a semiconductor layer where a channel is formed.