Abstract: Systems, devices, memory controllers, and methods for initializing memory are described. Initializing memory can include configuring memory devices in parallel. The memory devices can receive a shared enable signal. A unique volume address can be assigned to each of the memory devices.

Abstract: Disclosed are examples of apparatuses including memory devices and systems comprising memories sharing a common enable signal, wherein the memories may be put into different power modes. Example methods for setting the different power modes of the memories are disclosed. In some examples, different power modes may be set by issuing memory group-level commands, memory-level commands, or combinations thereof.

Abstract: The present disclosure includes devices, methods, and systems supporting on unit termination. A number of embodiments include a number of memory units, wherein a memory unit includes termination circuitry, and a memory unit does not include termination circuitry.

Abstract: Apparatuses and methods of operating memory are described. One such method can include receiving a select command at a plurality of memory volumes of a memory device, the select command indicating a targeted memory volume of the plurality of memory volumes. In response to the select command, the method can include selecting the targeted memory volume of the memory volumes and putting at least a portion of a non-selected memory volume of the memory volumes in a particular state based, at least in part, on a previous state of the non-selected memory volume and/or a portion of an address associated with the select command.

Abstract: Apparatuses supporting multiple interface types and methods operating the same are described. One such method can include providing, to a memory device, a first input/output (I/O) supply voltage corresponding to a first interface type and subsequently determining whether the memory device supports a second interface type having a second I/O supply voltage corresponding thereto. In response to a determination that the memory device supports the second interface type, the method can include adjusting the I/O supply voltage provided to the memory device from the first I/O supply voltage to the second I/O supply voltage.

Abstract: Apparatuses and methods of operating memory are described. One such method can include receiving a select command at a plurality of memory volumes of a memory device, the select command indicating a targeted memory volume of the plurality of memory volumes. In response to the select command, the method can include selecting the targeted memory volume of the memory volumes and putting at least a portion of a non-selected memory volume of the memory volumes in a particular state based, at least in part, on a previous state of the non-selected memory volume and/or a portion of an address associated with the select command.

Abstract: Apparatuses and methods of calibrating a memory interface are described. Calibrating a memory interface can include loading and outputting units of a first data pattern into and from at least a portion of a register to generate a first read capture window. Units of a second data pattern can be loaded into and output from at least the portion of the register to generate a second read capture window. One of the first read capture window and the second read capture window can be selected and a data capture point for the memory interface can be calibrated according to the selected read capture window.

Abstract: Systems, devices, memory controllers, and methods for initializing memory are described. Initializing memory can include configuring memory devices in parallel. The memory devices can receive a shared enable signal. A unique volume address can be assigned to each of the memory devices.

Abstract: Apparatuses and methods of operating memory are described. One such method can include receiving a select command at a plurality of memory volumes of a memory device, the select command indicating a targeted memory volume of the plurality of memory volumes. In response to the select command, the method can include selecting the targeted memory volume of the memory volumes and putting at least a portion of a non-selected memory volume of the memory volumes in a particular state based, at least in part, on a previous state of the non-selected memory volume and/or a portion of an address associated with the select command.

Abstract: Systems, devices, memory controllers, and methods for initializing memory are described. Initializing memory can include configuring memory devices in parallel. The memory devices can receive a shared enable signal. A unique volume address can be assigned to each of the memory devices.

Abstract: Apparatuses and methods of calibrating a memory interface are described. Calibrating a memory interface can include loading and outputting units of a first data pattern into and from at least a portion of a register to generate a first read capture window. Units of a second data pattern can be loaded into and output from at least the portion of the register to generate a second read capture window. One of the first read capture window and the second read capture window can be selected and a data capture point for the memory interface can be calibrated according to the selected read capture window.

Abstract: Methods of changing a centerline voltage of a data signal are described, along with apparatuses to change the centerline voltage. In one such method, portions of a termination circuit coupled to an output pin are selectively activated to change an impedance of the termination circuit to change the centerline voltage of the data signal driven to the output pin. One such apparatus includes pull-up impedances and pull-down impedances that can be activated to change the centerline voltage of the data signal. Additional embodiments are also described.

Abstract: Apparatuses and methods of calibrating a memory interface are described. Calibrating a memory interface can include loading and outputting units of a first data pattern into and from at least a portion of a register to generate a first read capture window. Units of a second data pattern can be loaded into and output from at least the portion of the register to generate a second read capture window. One of the first read capture window and the second read capture window can be selected and a data capture point for the memory interface can be calibrated according to the selected read capture window.

Abstract: Methods of adjusting a centerline voltage of a data signal are described, along with apparatuses to adjust the centerline voltage. In one such method, portions of a termination circuit coupled to a node are selectively programmed to adjust an impedance of the termination circuit to adjust the centerline voltage of the data signal driven to the node. One such apparatus includes pull-up impedances and pull-down impedances that can be programmed to adjust the centerline voltage of the data signal. Additional embodiments are also described.

Abstract: Apparatuses and methods of calibrating a memory interface are described. Calibrating a memory interface can include loading and outputting units of a first data pattern into and from at least a portion of a register to generate a first read capture window. Units of a second data pattern can be loaded into and output from at least the portion of the register to generate a second read capture window. One of the first read capture window and the second read capture window can be selected and a data capture point for the memory interface can be calibrated according to the selected read capture window.

Abstract: Methods of adjusting a centerline voltage of a data signal are described, along with apparatuses to adjust the centerline voltage. In one such method, portions of a termination circuit coupled to a node are selectively programmed to adjust an impedance of the termination circuit to adjust the centerline voltage of the data signal driven to the node. One such apparatus includes pull-up impedances and pull-down impedances that can be programmed to adjust the centerline voltage of the data signal. Additional embodiments are also described.

Abstract: The present disclosure includes devices, methods, and systems supporting on unit termination. A number of embodiments include a number of memory units, wherein a memory unit includes termination circuitry, and a memory unit does not include termination circuitry.

Abstract: Described embodiments include logical units within a memory device with control circuitry configured to assign a logical unit address to the logical unit. Apparatus including a plurality of the logical units arranged in a daisy chain configuration and methods of assigning logical unit addresses to the logical units are also disclosed.

Abstract: Systems, devices, memory controllers, and methods for initializing memory are described. Initializing memory can include configuring memory devices in parallel. The memory devices can receive a shared enable signal. A unique volume address can be assigned to each of the memory devices.

Abstract: Apparatus, methods, and systems are disclosed, such as those involving a multi-die device having a common bus to indicate a state of each of a die of a multi-die device and that provides the state of all of the dice at a common output. Such a multi-die device can comprise two or more dice in a multi-die package, wherein each of said dice has a first drive parameter when indicating a first state and a second drive parameter when indicating a second state. When the first drive parameter of the two or more dice is at a value such that when one or more of said two or more dice is in the first state, said common output can indicate that all of the dice in the multi-die device are in the first state.