Abstract: The present invention relates to a method of making a mask for patterning a thin film. The method includes a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate; a step of forming the inorganic material in a predetermined pattern; and a step of narrowing the inorganic material with the alkali solution to form the mask.

Abstract: A thin film magnetic head of the present invention is configured to include a main pole layer; a main pole direct junction magnetic layer that has an auxiliary pole layer and an auxiliary yoke layer, the main pole direct junction magnetic layer being directly joined to the main pole layer in a state where a recording gap layer is partially intervened near an air bearing surface (ABS) with respect to the main pole layer; and a first magnetic recording exciting coil that is buried between the auxiliary pole layer and the auxiliary yoke layer configuring the main magnetic direct junction magnetic layer with an insulating layer therebetween. Thereby, an effective magnetic path length can be shortened in order to improve the high-frequency characteristics, and furthermore, simplification of the manufacturing processes becomes possible.

Abstract: The present invention relates to a method of making a mask for patterning a thin film The method includes a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate; a step of forming the inorganic material in a predetermined pattern; and a step of narrowing the inorganic material with the alkali solution to form the mask.

Abstract: The present invention relates to a method of forming a metal in a concave portion of a substrate. The method includes a step of preparing a substrate having a concave portion; a step of applying a liquid coating member on the substrate and filling in and solidifying the concave portion with the coating member; a step of covering the coating member with a resist; a step of forming a penetrating hole that penetrates the resist in a position of the concave portion of the substrate; a step of removing the coating member within the concave portion; and a step of filling a metal into a portion where the coating member has been removed.

Abstract: The present invention relates to a method of forming a metal in a concave portion of a substrate. The method includes a step of preparing a substrate having a concave portion; a step of applying a liquid coating member on the substrate and filling in and solidifying the concave portion with the coating member; a step of covering the coating member with a resist; a step of forming a penetrating hole that penetrates the resist in a position of the concave portion of the substrate; a step of removing the coating member within the concave portion; and a step of filling a metal into a portion where the coating member has been removed.

Abstract: An object to be polished includes a support body and a silver thin film. The support body has a surface to be polished and a trench that opens in the surface to be polished. At least part of the support body, including the surface to be polished, is made of alumina. The silver thin film is formed to fill the trench of the support body. A polishing composition is for use in a process of polishing the silver thin film and the surface to be polished of the object to be polished by chemical mechanical polishing. The polishing composition contains silica abrasive grains, nitric acid, hydrogen peroxide, and benzotriazole. The polishing composition is such one that the polishing rate of silver divided by the polishing rate of alumina in the process of polishing is equal to or higher than 5.

Abstract: Disclosed is a polishing method for polishing a surface of a structure for magnetic-head manufacture by CMP in the process of manufacturing a magnetic head using a ceramic substrate made of a ceramic material containing AlTiC, the structure including the ceramic substrate and one or more layers formed thereon, and having the surface to be polished. The polishing method uses a retainer ring made of a ceramic material containing AlTiC.

Abstract: An alumina-film-polishing composition is for use in chemical mechanical polishing of an object to be polished that includes an alumina film with an irregular surface, so as to planarize the irregular surface. The polishing composition contains an alumina abrasive grain, and a protection-film-forming agent for forming a protection film on the surface of each of the alumina film and the alumina abrasive grain. The protection-film-forming agent is a water-soluble polymer that has a weight average molecular weight within a range of 100 to 1,000,000 and that is obtained by polymerizing a monomer having at least one OH group or COOH group in its molecule.

Abstract: Disclosed is a polishing method for polishing a surface of a structure for magnetic-head manufacture by CMP in the process of manufacturing a magnetic head using a ceramic substrate made of a ceramic material containing AlTiC, the structure including the ceramic substrate and one or more layers formed thereon, and having the surface to be polished. The polishing method uses a retainer ring made of a ceramic material containing AlTiC.

Abstract: An alumina-film-polishing composition is for use in chemical mechanical polishing of an object to be polished that includes an alumina film with an irregular surface, so as to planarize the irregular surface. The polishing composition contains an alumina abrasive grain, and a protection-film-forming agent for forming a protection film on the surface of each of the alumina film and the alumina abrasive grain. The protection-film-forming agent is a water-soluble polymer that has a weight average molecular weight within a range of 100 to 1,000,000 and that is obtained by polymerizing a monomer having at least one OH group or COOH group in its molecule.

Abstract: The present invention relates to a polishing composition more suitable for application in polishing semiconductor devices. The polishing composition consists of a liquid component including water and water-soluble amine. The water-soluble amine includes at least one of triethylenetetramine (TETA) and tetraethylenepentamine (TEPA) and is dissolved in the water.

Abstract: To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate of a silicon nitride layer is obtainable, and a polishing method employing such a composition. A polishing composition which has silicon oxide abrasive grains, an acidic additive and water, wherein the acidic additive is such that when it is formed into a 85 wt % aqueous solution, the chemical etching rate of the silicon nitride layer is at most 0.1 nm/hr in an atmosphere of 80° C. Particularly preferred is one wherein the silicon oxide abrasive grains have an average particle size of from 1 to 50 nm, and the pH of the composition is from 3.5 to 6.5.

Abstract: A polishing composition of the present invention contains cerium oxide abrasive grains with surfaces having an adsorption layer formed by adsorption of silicon oxide fine grains. The polishing composition is used in an application for polishing a polishing subject including a laminated body and a silicon oxide film arranged on the laminated body. The laminated body has a semiconductor substrate formed from a monocrystalline silicon or a polycrystalline silicon, a silicon nitride film arranged on the semiconductor substrate, and a surface with grooves. The polishing composition removes a portion of the silicon oxide film located outside the groove.

Abstract: To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate of a silicon nitride layer is obtainable, and a polishing method employing such a composition. A polishing composition which comprises silicon oxide abrasive grains, an acidic additive and water, wherein the acidic additive is such that when it is formed into a 85 wt % aqueous solution, the chemical etching rate of the silicon nitride layer is at most 0.1 nm/hr in an atmosphere of 80° C. Particularly preferred is one wherein the silicon oxide abrasive grains have an average particle size of from 1 to 50 nm, and the pH of the composition is from 3.5 to 6.5.

Abstract: A semiconductor device, comprising a frame including a die pad and a lead portion; a semiconductor element; a wire including one end connected to the semiconductor element and another end connected to the lead portion; at least one first bonding portion formed of a solder material and bonding a part of an upper surface of the die pad to a part which is on a lower surface of the semiconductor element and which is opposed to the part of the upper surface of the die pad; and at least one second bonding portion formed of a thermosetting resin and bonding another part of the upper surface of the die pad to another part which is on the lower surface of the semiconductor element and which is opposed to said another part of the upper surface of the die pad.

Abstract: The present invention relates to a polishing composition more suitable for application in polishing semiconductor devices. The polishing composition consists of a liquid component including water and water-soluble amine. The water-soluble amine includes at least one of triethylenetetramine (TETA) and tetraethylenepentamine (TEPA) and is dissolved in the water.

Abstract: Disclosed is a high-temperature solder material which is composed of tin, zinc and silver, or of 0.01 to 2 wt % germanium or aluminum and the balance tin, or tin and zinc at a ratio of 80/20 to 70/30. The tin/zinc/silver solder has a composition ratio that the ratio of till to zinc is within a range of 97/3 to 79/21 by weight, and the ratio of the sum of tin and zinc to silver is within a range of 88/12 to 50/50 by weight, or that the ratio of tin to zinc is within a range of 70/30 to 5/95 by weight, and the ratio of silver to the sum of tin, zinc and silver is 15% by weight or less. The solder material is used for producing electric or electronic devices and equipments.

Abstract: The present invention provides a semiconductor device comprising a frame including a die pad and a lead portion, a semiconductor element, a wire including one end connected to the semiconductor element and another end connected to the lead portion, at least one first bonding portion formed of a solder material and bonding a part of the die pad to a part of the semiconductor element, and at least one second bonding portion formed of a thermosetting resin and bonding another part of the die pad to another part of the semiconductor element.