Abstract: A semiconductor device according to an aspect of the present invention includes a lead frame formed substantially on a single plane, a power semiconductor element and a control semiconductor element mounted on the lead frame, a first conductor electrically connecting the power semiconductor element and the lead frame, and a second conductor electrically connecting the control semiconductor element and the lead frame; and a heat sink formed, via an insulating layer, on a surface of the lead frame at a side opposite to a side on which the power semiconductor element and the control semiconductor element are mounted. The heat sink is spaced apart from the lead frame at a periphery portion thereof so that a distance between the heat sink and the lead frame is gradually increased in a direction perpendicular to the surface of the lead frame on which the power semiconductor element and the control semiconductor element are mounted.

Abstract: A semiconductor package includes a semiconductor chip. The semiconductor chip includes first and second electrodes disposed on a top side, and a third electrode disposed on a bottom side. A heat spreader is bonded to the third electrode. First and second conductive leads are electrically connected to the first and second electrodes through first and second conductive bonding members, respectively. The first and second leads respectively include foot portions at their lower ends, which are juxtaposed on a first side of the heat spreader. The heat spreader and the foot portions of the first and second leads have bottom faces, which are exposed on the bottom of an insulating sealing body, and are disposed on the same plane.

Abstract: A semiconductor package includes a semiconductor chip. The semiconductor chip includes first and second electrodes disposed on a top side, and a third electrode disposed on a bottom side. A heat spreader is bonded to the third electrode. First and second conductive leads are electrically connected to the first and second electrodes through first and second conductive bonding members, respectively. The first and second leads respectively include foot portions at their lower ends, which are juxtaposed on a first side of the heat spreader. The heat spreader and the foot portions of the first and second leads have bottom faces, which are exposed on the bottom of an insulating sealing body, and are disposed on the same plane.

Abstract: A polishing composition comprising an abrasive, an anticorrosive, an oxidizing agent, an acid, a pH regulator and water and having a pH within a range of from 2 to 5, wherein the abrasive is colloidal silica or fumed silica, and its primary particle size is at most 20 nm.

Abstract: Disclosed is a high-temperature solder material which is composed of tin, zinc and silver, or of 0.01 to 2 wt % germanium or aluminum and the balance tin, or tin and zinc at a ratio of 80/20 to 70/30. The tin/zinc/silver solder has a composition ratio that the ratio of till to zinc is within a range of 97/3 to 79/21 by weight, and the ratio of the sum of tin and zinc to silver is within a range of 88/12 to 50/50 by weight, or that the ratio of tin to zinc is within a range of 70/30 to 5/95 by weight, and the ratio of silver to the sum of tin, zinc and silver is 15% by weight or less. The solder material is used for producing electric or electronic devices and equipments.

Abstract: Disclosed is a semiconductor device provided with a heat-sink. The semiconductor device comprises a laminated insulating film formed on the heat-sink, a lead-frame mounted on the laminated insulating film, a semiconductor chip mounted to the lead-frame, and a molding resin for molding the semiconductor chip. The laminated insulating film comprises a first insulating resin layer formed on the side of the heat-sink and a second insulating resin layer formed on the side of the lead-frame. The first insulating resin layer is made of an epoxy resin containing 80 wt % of a heat dissipating filler. Also, the second insulating resin layer is made of an epoxy resin containing 70 wt % of a heat dissipating filler.