Abstract: Provided is a method for manufacturing a semiconductor light emitting element, which has a step wherein a substrate composed of a material different from that of a semiconductor layer is used and a III compound semiconductor layer is formed on the substrate, and can reduce the emission wavelength distribution (?) of the obtained semiconductor light emitting layer. The method for manufacturing the semiconductor light emitting element having the III compound semiconductor layer is characterized in having: a compound semiconductor substrate forming step wherein at least one compound semiconductor layer is formed on the substrate and a compound semiconductor substrate having an amount of warpage (H) within the range of 50 ?m?H?250 ?m is formed; and a light emitting layer forming step wherein the light emitting layer composed of a plurality of III compound semiconductor layers is formed on the compound semiconductor substrate which has been formed.

Abstract: When compound semiconductor layers are formed on a compound semiconductor substrate (40) by sequentially layering group III nitride semiconductor crystalline layers by metal organic chemical vapor deposition method, the compound semiconductor substrate (40) is attached inside of a reaction container with the crystal growth surface thereof facing upward, a protection member (60) having plural grooves (63) formed in a radiating manner on the side facing the crystal growth surface is attached above the compound semiconductor substrate (40), and a material gas is supplied to the inside of the reaction container through a first through hole (61) provided in the center of the protection member (60). Thereby, in the manufacture of a compound semiconductor using metal organic chemical vapor deposition method, a decrease in yield caused by adhesion of peeled-off reaction byproducts to the substrate or to the epitaxially grown film on the substrate is suppressed.

Abstract: A refrigerating apparatus for keeping an inside of a storage at a predetermined low-temperature state includes first and second refrigerant circuits including compressors, condensers, decompressors, and evaporators, connected circularly with pipings to form refrigerating cycles, the circuit having a first or second refrigerant sealed therein as a working refrigerant, a first sensor which detects a temperature of a cascade condenser constituted by integrating the evaporator of the first refrigerant circuit and the condenser of the second refrigerant circuit in a heat exchangeable manner, first and second controllers which control operation performances of the first and second compressors in a variable manner based on first and second sensor detected temperatures in order that the first and second sensor detected temperatures are first and second temperatures, respectively, and a second sensor which detects a temperature inside the storage.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract: An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

Abstract: A Group III nitride semiconductor device and method for producing the same. The device includes a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate. A first layer which is in contact with the substrate is composed of AlxGa1-x N (0?x?1), and the difference in height between a protrusion and a depression which are present at the interface between the first layer and a second layer provided thereon is 10 nm or more and is equal to, or less than, 99% the thickness of the first layer. The method includes a first step of depositing on a substrate, a layer containing fine Group III metal particles containing silicon; a second step of nitridizing the fine particles in an atmosphere containing a nitrogen source; and a third step of growing a Group III nitride semiconductor single crystal on the thus-nitridized fine particles.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor device exhibiting improved crystallinity and a good performance. The inventive Group III nitride semiconductor device comprises a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate, wherein a first layer which is in contact with the substrate is composed of silicon-doped AlxGa1-xN (0?x?1). Also, the inventive Group III nitride semiconductor device comprises a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate, wherein a first layer which is in contact with the substrate is composed of AlxGa1-xN (0?x?1), and the difference in height between a protrusion and a depression which are present at the interface between the first layer and a second layer provided thereon is 10 nm or more and is equal to, or less than, 99% the thickness of the first layer.

Abstract: A culture apparatus includes a culture chamber in which culture is cultured, a shelf plate included in the culture chamber, on which the culture is placed, and shelf rests in a left-and-right pair configured to support the shelf plate and a plurality of shelf supports configured to support the shelf rests. The shelf rests each include one piece supporting the shelf plate and the other piece supported by the shelf supports. The shelf rests are in an L-shape in a cross-sectional manner whose angle between the one piece and the other piece is an acute angle. The one piece is in line contact with a lower face of the shelf plate at an end of the one piece extending obliquely upward from a side face of the culture chamber toward the inside of the culture chamber. The culture chamber is supplied with sterilizing gas to be sterilized.

Abstract: An imaging apparatus includes: a camera head that is provided with an image pickup device that outputs an image signal; a camera control unit that is connected to the camera head with a camera cable and outputs a video signal based on the image signal; a CDS circuit that performs co-related double sampling on the image signal; a pulse generator that outputs sample pulses to the CDS circuit; a phase adjusting unit that performs phase adjustment on a clock signal and outputs the adjusted clock signal to the pulse generator; a peak search unit that searches for a peak range in the image signal being performed with the co-related double sampling by the CDS circuit; and a phase control unit that controls the phase adjustment by the phase adjusting unit based on a result of the search by the peak search unit.

Abstract: According to one embodiment, a remote head camera includes a camera control unit, and a camera head configured to be connected to the camera control unit and including an imaging device, a drive signal generator, and a format identifying unit. The drive signal generator generates a drive signal for driving the imaging device. The format identifying unit identifies a format of the imaging device based on a clock count in a synchronization period from a first synchronization pulse to a second synchronization pulse output after the first synchronization pulse. The first synchronization pulse and the second synchronization pulse constitutes a synchronization signal.

Abstract: According to an embodiment, an imaging device includes a first CCD which converts a first color component into a first electric signal, a second CCD which converts a second color component different from the first color component into a second electric signal, a third CCD which converts a third color component different from the first and second color components into a third electric signal, and a heat sink having first to third radiators which radiate heat from the first to third CODs. The first to third radiators are maintained at the same temperature by the function of the heat sink.

Abstract: In the process for production of a gallium nitride-based compound semiconductor light emitting device, when an n-type semiconductor layer, a light emitting layer obtained by alternately stacking an n-type dopant-containing barrier layer and a well layer, and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, are grown in that order on a substrate, the ratio of the supply rates of n-type dopant and Group III element during growth of the barrier layer (M/III) is controlled to a range of 4.5×10?7?(M/III)<2.0×10?6 in terms of the number of atoms.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.

Abstract: An imaging apparatus includes: a camera head that is provided with an image pickup device that outputs an image signal; a camera control unit that is connected to the camera head with a camera cable and outputs a video signal based on the image signal; a CDS circuit that performs co-related double sampling on the image signal; a pulse generator that outputs sample pulses to the CDS circuit; a phase adjusting unit that performs phase adjustment on a clock signal and outputs the adjusted clock signal to the pulse generator; a peak search unit that searches for a peak range in the image signal being performed with the co-related double sampling by the CDS circuit; and a phase control unit that controls the phase adjustment by the phase adjusting unit based on a result of the search by the peak search unit.

Abstract: According to one embodiment, a remote head camera includes a camera control unit, and a camera head configured to be connected to the camera control unit and including an imaging device, a drive signal generator, and a format identifying unit. The drive signal generator generates a drive signal for driving the imaging device. The format identifying unit identifies a format of the imaging device based on a clock count in a synchronization period from a first synchronization pulse to a second synchronization pulse output after the first synchronization pulse. The first synchronization pulse and the second synchronization pulse constitutes a synchronization signal.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract: An object is to provide a medicine supply apparatus capable of reducing a time required for charging medicines without causing any trouble during counting of the medicines, the apparatus comprises: a discharge drum which discharges the medicines from a tablet case; a medicine detecting sensor which detects the medicines discharged from the tablet case, and a control device, and this control device controls a rotating motor for rotating the discharge drum to discharge the medicines from the tablet case, counts the discharged medicines based on a detecting operation of the medicine detecting sensor, and changes a discharge speed of the medicine by the discharge drum depending on a type of medicine in the tablet case.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract: An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.